Advanced Power Technology APT APL1001J Datasheet
D
S
S
G
G
S
ISOTOP
POWER MOS IV
D
SOT-227
®
APL1001J 1000V 18.0A 0.60W
"UL Recognized" File No. E145592 (S)
®
SINGLE DIE ISOTOP® P ACKAGE
N-CH AN NEL ENHANCEMENT MODE HIGH VOLTAGE POW ER MOSFETS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
IDM, l
LM
V
GS
P
D
TJ,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
APL1001J
1000
18
72
±30
520
4.16
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
(ON)
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
2
(V
> ID(ON) x RDS(ON) Max, VGS = 8V)
DS
PRELIMINARY
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
= 0V, ID = 250 µA)
GS
2
(VGS = 10V, 0.5 ID [Cont.])
, VGS = 0V)
DSS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
1000
18
24
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QCS
Characteristic
Junction to Case
Case to Sink
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.06
0.60
25
250
±100
0.24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
UNIT
°C/W
APT Website - http://www.advancedpower.com
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
050-5904 Rev A 3-2000
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
DYNAMIC CHARACTERISTICS APL1001J
Symbol
C
iss
C
oss
C
rss
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
V
= 15V
GS
= 0.5 V
V
DD
DSS
ID = ID [Cont.] @ 25°C
= 0.6W
R
G
MIN TYP MAX
6100
780
285
14
14
60
14
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Safe Operating Area
0.3
V
Test Conditions / Part Number
= 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
DS
MIN TYP MAX
300 375
UNIT
pF
ns
UNIT
Watts
, THERMAL IMPEDANCE (°C/W)
JC
q
Z
0.1
0.05
0.01
0.005
0.001
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
r = 4.0 (.157)
(2 places)
-4
10
31.5 (1.240)
31.7 (1.248)
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
7.8 (.307)
8.2 (.322)
-2
10
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
-1
10
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
Hex Nut M4
(4 places)
12.6 (.496)
12.8 (.504)
1.0 10
25.2 (0.992)
25.4 (1.000)
050-5904 Rev A 3-2000
3.3 (.129)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
3.6 (.143)
* Source Drain
* Source
1.95 (.077)
2.14 (.084)
*
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Loading...