• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1000 V
DSS
ID Continuo us Drain Current
Tc = 25°C 78
Tc = 80°C 59
IDM Pulsed Drain current 312
VGS Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 90
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com 1
A
mΩ
mJ
Rev 0 July, 2004
APTM100DUM90
6
APTM100DUM90
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1000 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 39A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30V, VDS = 0V ±250 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 20.7
is s
C
Output Capacitance 3.5
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 744
Qgs Gate – Source Charge 96
Qgd Gate – Drain C harge
T
Tur n-o n Delay Ti me 18
d(on)
T
Rise Time 12
r
T
Turn-off Delay Time 155
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng E nergy X 3.6
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1000V Tj = 25°C 1
VGS = 0V,VDS = 800VTj = 125°C 3
90
mA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.64
nF
VGS = 10V
V
= 500V
Bus
ID = 78A
488
nC
Inductive switching @ 125°C
VGS = 15V
V
= 670V
Bus
ns
ID = 78A
RG =1.2Ω
40
Inductive switching @ 25°C
VGS = 15V, V
= 670V
Bus
mJ
ID = 78A, RG = 1.2Ω 2.5
E
Tur n-o n Sw i tchi ng E nergy X 5.7
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 670V
Bus
ID = 78A, RG = 1.2Ω
mJ
3.1
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 78 IS Continuo us So ur ce c ur r ent
Tc = 80°C 59
A
VSD Diode Forward Voltage VGS = 0V, IS = - 78A 1.3 V
dv/dt Peak Diode Recovery Z 10 V/ns
trr Reverse Recovery Time 1170 ns
Qrr Reverse Recovery Charge
IS = - 78A, VR = 500V
diS/dt = 400A/µs
65.1 µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM100DUM90
6
APTM100DUM90
–
–
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case 0.1 °C/W
thJC
V
T
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
Package outline
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
TJ Operating junction temperature range
Storage Temperature Range -40 125
STG
To heatsink M6 3 5
For terminals M5 2 3.5
2500 V
-40 150
°C
N.m
Rev 0 July, 2004
APT website – http://www.advancedpower.com 3
APTM100DUM90
6
–
–
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
APTM100DUM90
0.1
0.08
0.06
0.04
0.02
Thermal Impedance (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
0
Single Pulse
0.000010.00010.0010.010.1110
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
240
VGS=15, 10&8V
200
7V
320
280
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 du ty cycle
240
160
120
80
, Drai n Current (A)
D
I
40
0
051015202530
V
, Drain to Source Voltage (V)
DS
6.5 V
6V
5.5V
200
160
120
80
, Drain Current (A)
D
I
5V
40
0
TJ=25°C
TJ=125°C
TJ=-55° C
0123456789
V
, Gate to Source Voltage (V)
GS
DC Drain Current vs Case Temperature
80
70
1.4
1.3
R
DS(on)
Normalized to
V
=10V @ 39A
GS
vs Drain Current
60
1.2
1.1
1
0.9
0.8
04080120160200240
(on) Drain to Source ON Resistance
DS
R
VGS=10V
VGS=20V
I
, Drain Current (A)
D
50
40
30
20
, DC Drain Current (A)
D
I
10
0
255075100125150
T
, Case Temperature (°C)
C
Rev 0 July, 2004
APT website – http://www.advancedpower.com 4
APTM100DUM90
6
APTM100DUM90
–
–
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
Voltage (Normalized)
0.85
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
2.5
VGS=10V
=39A
I
D
2.0
1.5
1.0
(Normalized)
0.5
ON resistance vs Temperature
0.0
(on), Drain to Source ON resistance
DS
-50 -25 025 50 75 100 125 150
R
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
1000
limited by RDSon
100
10
, Drain Current (A)
D
I
Single pulse
T
=150°C
J
1
1101001000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10ms
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=78A
T
=25°C
J
VDS=200V
VDS=500V
VDS=800V
6
1000
C, Capacitance (pF)
100
0 1020304050
, Drain to Source Voltage (V)
V
DS
Crss
4
2
, Gate to Source Voltage (V)
GS
V
0
02004006008001000
Gate Charge (nC)
Rev 0 July, 2004
APT website – http://www.advancedpower.com 5
APTM100DUM90
6
APTM100DUM90
–
–
Delay Times vs Current
200
160
(ns)
d(off)
and t
d(on)
t
120
80
40
VDS=670V
=1.2Ω
R
G
=125°C
T
J
L=100µH
0
20406080 100 120 140 160
, Drain Current (A)
I
D
Switching Energy vs Current
10
8
6
VDS=670V
=1.2Ω
R
G
=125°C
T
J
L=100µH
E
on
4
2
Switching Energy (mJ)
0
20406080 100 120 140 160
ID, Drain Current (A)
Rise and Fall times vs Current
80
t
d(on)
t
d(off)
VDS=670V
=1.2Ω
R
G
=125°C
T
J
60
L=100µH
(ns)
f
40
and t
r
t
20
t
f
t
r
0
20406080100 120 140 160
, Drain Current (A)
I
D
Switching Energy vs Gate Resistance
14
VDS=670V
12
=78A
I
D
=125°C
T
J
10
E
off
L=100µH
8
6
E
off
E
on
4
2
Switching Energy (mJ)
0
02468
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
250
ZVS
200
ZCS
150
VDS=670V
100
D=50%
R
=1.2Ω
Frequency (kHz)
G
T
=125°C
50
J
T
C
=75°C
Hard
switching
0
0 10203040506070
, Drain Current (A)
I
D
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
, Reverse Drain Current (A)
DR
I
1
0.2 0.4 0.6 0.811.2 1.4 1.6 1.8
, Source to Drain Voltage (V)
V
SD
APT re se rves t he rig ht to c hange , wit ho ut no t ic e , the spe cifica tio ns and i nfo rma tion co ntained he rein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Rev 0 July, 2004
APT website – http://www.advancedpower.com 6
APTM100DUM90
6
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