Advanced Power Technology ATPM 100 DUM 90 Service Manual

www.DataSheet4U.com

–

–

S

D

ual Common Source

MOSFET Power Module

D2

D1

G1

S1

G1

S1

S2

G2

Q1

D1

S

Q2

G2

S2

S

D2

Application

Features

Benefits

APTM100DUM90

V
R

I

= 1000V

DSS

= 90mΩ max @ Tj = 25°C

DSon

= 78A @ Tc = 25°C

D

• AC Switches

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Power MOS 7® MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- M5 power connectors

• High level of integration

• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 1000 V

DSS

ID Continuo us Drain Current

Tc = 25°C 78
Tc = 80°C 59

IDM Pulsed Drain current 312
VGS Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 90

PD Maximum Power Dissipation Tc = 25°C 1250 W

IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website – http://www.advancedpower.com 1

A

mΩ

mJ

Rev 0 July, 2004

APTM100DUM90

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APTM100DUM90

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–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1000 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 39A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±250 nA

GS S

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 20.7

is s

C

Output Capacitance 3.5

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 744

Qgs Gate – Source Charge 96

Qgd Gate – Drain C harge

T

Tur n-o n Delay Ti me 18

d(on)

T

Rise Time 12

r

T

Turn-off Delay Time 155

d(off)

T

Fall Time

f

E

Tur n-o n Sw i tchi ng E nergy X 3.6

on

E

Turn-off Switching Energy Y

off

VGS = 0V,VDS = 1000V Tj = 25°C 1

VGS = 0V,VDS = 800V Tj = 125°C 3

90

mA

mΩ

VGS = 0V
VDS = 25V
f = 1MHz

0.64

nF

VGS = 10V
V

= 500V

Bus

ID = 78A

488

nC

Inductive switching @ 125°C

VGS = 15V
V

= 670V

Bus

ns

ID = 78A
RG =1.2Ω

40

Inductive switching @ 25°C

VGS = 15V, V

= 670V

Bus

mJ

ID = 78A, RG = 1.2Ω 2.5

E

Tur n-o n Sw i tchi ng E nergy X 5.7

on

E

Turn-off Switching Energy Y

off

Inductive switching @ 125°C

VGS = 15V, V

= 670V

Bus

ID = 78A, RG = 1.2Ω

mJ

3.1

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

(Body diode)

Tc = 25°C 78 IS Continuo us So ur ce c ur r ent
Tc = 80°C 59

A

VSD Diode Forward Voltage VGS = 0V, IS = - 78A 1.3 V

dv/dt Peak Diode Recovery Z 10 V/ns

trr Reverse Recovery Time 1170 ns

Qrr Reverse Recovery Charge

IS = - 78A, VR = 500V
diS/dt = 400A/µs

65.1 µC

X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ V

Tj ≤ 150°C

DSS

Rev 0 July, 2004

APT website – http://www.advancedpower.com 2

APTM100DUM90

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APTM100DUM90

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

Junction to Case 0.1 °C/W

thJC

V

T

TC Operating Case Temperature -40 100

Torque Mounting torque

Wt Package Weight 280 g

Package outline

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

ISOL

TJ Operating junction temperature range

Storage Temperature Range -40 125

STG

To heatsink M6 3 5
For terminals M5 2 3.5

2500 V

-40 150
°C

N.m

Rev 0 July, 2004

APT website – http://www.advancedpower.com 3

APTM100DUM90

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Typical Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.12

APTM100DUM90

0.1

0.08

0.06

0.04

0.02

Thermal Impedance (°C/W)

0.9

0.7

0.5

0.3

0.1

0.05

0

Single Pulse

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Low Voltage Output Characteristics

240

VGS=15, 10&8V

200

7V

320

280

Transfert Characteristics

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 du ty cycle

240

160

120

80

, Drai n Current (A)

D

I

40

0

0 5 10 15 20 25 30

V

, Drain to Source Voltage (V)

DS

6.5 V

6V

5.5V

200

160

120

80

, Drain Current (A)

D

I

5V

40

0

TJ=25°C

TJ=125°C

TJ=-55° C

0123456789

V

, Gate to Source Voltage (V)

GS

DC Drain Current vs Case Temperature

80

70

1.4

1.3

R

DS(on)

Normalized to
V

=10V @ 39A

GS

vs Drain Current

60

1.2

1.1

1

0.9

0.8
0 40 80 120 160 200 240

(on) Drain to Source ON Resistance

DS

R

VGS=10V

VGS=20V

I

, Drain Current (A)

D

50

40

30

20

, DC Drain Current (A)

D

I

10

0

25 50 75 100 125 150

T

, Case Temperature (°C)

C

Rev 0 July, 2004

APT website – http://www.advancedpower.com 4

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APTM100DUM90

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, Drain to Source Breakdown

DSS

BV

(TH), Threshold Voltage

GS

V

Breakdown Voltage vs Temperature

1.15

1.10

1.05

1.00

0.95

0.90

Voltage (Normalized)

0.85

-50 -25 0 25 50 75 100 125 150

T

, Junction Temperature (°C)

J

Threshold Voltage vs Temperature

1.2

1.1

1.0

0.9

0.8

(Normalized)

0.7

0.6

-50 -25 0 25 50 75 100 125 150

T

, Case Temperature (°C)

C

2.5

VGS=10V

=39A

I

D

2.0

1.5

1.0

(Normalized)

0.5

ON resistance vs Temperature

0.0

(on), Drain to Source ON resistance

DS

-50 -25 0 25 50 75 100 125 150

R

, Junction Temperature (°C)

T

J

Maximum Safe Operating Area

1000

limited by RDSon

100

10

, Drain Current (A)

D

I

Single pulse
T

=150°C

J

1

1 10 100 1000

, Drain to Source Voltage (V)

V

DS

100µs

1ms

10ms

Capacitance vs Drain to Source Voltage

100000

10000

Ciss

Coss

Gate Charge vs Gate to Source Voltage

14

12

10

8

ID=78A
T

=25°C

J

VDS=200V

VDS=500V

VDS=800V

6

1000

C, Capacitance (pF)

100

0 1020304050

, Drain to Source Voltage (V)

V

DS

Crss

4

2

, Gate to Source Voltage (V)

GS

V

0

0 200 400 600 800 1000

Gate Charge (nC)

Rev 0 July, 2004

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APTM100DUM90

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Delay Times vs Current

200

160

(ns)

d(off)

and t

d(on)

t

120

80

40

VDS=670V

=1.2Ω

R

G

=125°C

T

J

L=100µH

0

20 40 60 80 100 120 140 160

, Drain Current (A)

I

D

Switching Energy vs Current

10

8

6

VDS=670V

=1.2Ω

R

G

=125°C

T

J

L=100µH

E

on

4

2

Switching Energy (mJ)

0

20 40 60 80 100 120 140 160

ID, Drain Current (A)

Rise and Fall times vs Current

80

t

d(on)

t

d(off)

VDS=670V

=1.2Ω

R

G

=125°C

T

J

60

L=100µH

(ns)

f

40

and t

r

t

20

t

f

t

r

0

20 40 60 80 100 120 140 160

, Drain Current (A)

I

D

Switching Energy vs Gate Resistance

14

VDS=670V

12

=78A

I

D

=125°C

T

J

10

E

off

L=100µH

8

6

E

off

E

on

4

2

Switching Energy (mJ)

0

02468

Gate Resistance (Ohms)

Operating Frequency vs Drain Current

250

ZVS

200

ZCS

150

VDS=670V

100

D=50%
R

=1.2Ω

Frequency (kHz)

G

T

=125°C

50

J

T

C

=75°C

Hard

switching

0

0 10203040506070

, Drain Current (A)

I

D

Source to Drain Diode Forward Voltage

1000

100

TJ=150°C

TJ=25°C

10

, Reverse Drain Current (A)

DR

I

1

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

, Source to Drain Voltage (V)

V

SD

APT re se rves t he rig ht to c hange , wit ho ut no t ic e , the spe cifica tio ns and i nfo rma tion co ntained he rein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.

Rev 0 July, 2004

APT website – http://www.advancedpower.com 6

APTM100DUM90

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