Advanced Power Technology ATPM 100 DUM 90 Service Manual
www.DataSheet4U.com
–
–
S
D
ual Common Source
MOSFET Power Module
D2
D1
G1
S1
G1
S1
S2
G2
Q1
D1
S
Q2
G2
S2
S
D2
Application
Features
Benefits
APTM100DUM90
V
R
I
= 1000V
DSS
= 90mΩ max @ Tj = 25°C
DSon
= 78A @ Tc = 25°C
D
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Power MOS 7® MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1000 V
DSS
ID Continuo us Drain Current
Tc = 25°C 78
Tc = 80°C 59
IDM Pulsed Drain current 312
VGS Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 90
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com 1
A
mΩ
mJ
Rev 0 July, 2004
APTM100DUM90
6
APTM100DUM90
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1000 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 39A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±250 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 20.7
is s
C
Output Capacitance 3.5
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 744
Qgs Gate – Source Charge 96
Qgd Gate – Drain C harge
T
Tur n-o n Delay Ti me 18
d(on)
T
Rise Time 12
r
T
Turn-off Delay Time 155
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng E nergy X 3.6
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1000V Tj = 25°C 1
VGS = 0V,VDS = 800V Tj = 125°C 3
90
mA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.64
nF
VGS = 10V
V
= 500V
Bus
ID = 78A
488
nC
Inductive switching @ 125°C
VGS = 15V
V
= 670V
Bus
ns
ID = 78A
RG =1.2Ω
40
Inductive switching @ 25°C
VGS = 15V, V
= 670V
Bus
mJ
ID = 78A, RG = 1.2Ω 2.5
E
Tur n-o n Sw i tchi ng E nergy X 5.7
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 670V
Bus
ID = 78A, RG = 1.2Ω
mJ
3.1
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 78 IS Continuo us So ur ce c ur r ent
Tc = 80°C 59
A
VSD Diode Forward Voltage VGS = 0V, IS = - 78A 1.3 V
dv/dt Peak Diode Recovery Z 10 V/ns
trr Reverse Recovery Time 1170 ns
Qrr Reverse Recovery Charge
IS = - 78A, VR = 500V
diS/dt = 400A/µs
65.1 µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 78A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM100DUM90
6
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