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APTM50DHM38
Asymmetrical - bridge
MOSFET Power Module
OUT1
G1
VBUS 0/VBUS
S1
OUT2
S4
G4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 500 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 360
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 38
DSon
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 46 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
V
R
I
Application
Features
Benefits
= 500V
DSS
= 38mW max @ Tj = 25°C
DSon
= 90A @ Tc = 25°C
D
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Tc = 25°C 90
= 80°C 67
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM50DHM38 – Rev 2 April, 2004
APTM50DHM38
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 500 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 45A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GSS
VGS = 0V,VDS = 500V T
VGS = 0V,VDS = 400V Tj = 125°C 750
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 11.2
C
iss
C
Output Capacitance 2.4
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 246
Qgs Gate – Source Charge 66
Qgd Gate – Drain Charge
T
Turn-on Delay Time 18
d(on)
T
Rise Time 35
r
T
Turn-off Delay Time 87
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 1510
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 250V
V
Bus
= 90A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 333V
V
Bus
I
= 90A
D
= 2W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 90A, RG = 2Ω 1452
I
D
= 333V
Bus
= 25°C 150
j
38
0.18
130
77
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 2482
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 90A, RG = 2Ω
I
D
= 333V
Bus
µJ
1692
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 80°C 100 A
I
F(AV)
IF = 100A 1.6 1.8
V
ns
nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A 1.9 VF Diode Forward Voltage
I
= 100A Tj = 125°C
F
= 100A
I
F
= 400V
V
R
di/dt = 200A/µs
= 100A
I
F
V
= 400V
R
di/dt = 200A/µs
Tj = 25°C 180
T
= 125°C 220
j
Tj = 25°C 390
= 125°C 1450
T
j
1.4
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM50DHM38 – Rev 2 April, 2004
APTM50DHM38
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
V
TJ Operating junction temperature range
T
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
Storage Temperature Range -40 125
STG
To heatsink M6 3 5
For terminals M5 2 3.5
Transistor
Diode 0.6
Package outline
0.18
2500 V
-40 150
°C/W
°C
N.m
APT website –http://www.advancedpower.com
3–6
APTM50DHM38 – Rev 2 April, 2004
Typical Performance Curve
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.08
0.06
0.04
Thermal Impedance (°C/W)
0.02
0.9
0.7
0.5
0.1
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
APTM50DHM38
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
350
, Drain Current (A)
D
I
(on) Drain to Source ON Resistance
DS
300
250
200
150
100
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
VGS=10&15V
50
0
0 5 10 15 20 25
V
, Drain to Source Voltage (V)
DS
RDS(on) vs Drain Current
Normalized to
=10V @ 45A
V
GS
0 50 100 150 200
I
, Drain Current (A)
D
8V
VGS=10V
VGS=20V
7.5V
7V
6.5V
6V
5.5V
250
200
150
100
, Drain Current (A)
D
50
I
0
DC Drain Current vs Case Temperature
100
80
60
40
, DC Drain Current (A)
D
20
I
0
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
TJ=25°C
TJ=125°C
012345678
, Gate to Source Voltage (V)
V
GS
25 50 75 100 125 150
T
, Case Temperature (°C)
C
TJ=-55°C
APT website –http://www.advancedpower.com
4–6
APTM50DHM38 – Rev 2 April, 2004
APTM50DHM38
S
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
Voltage (Normalized)
, Drain to Source Breakdown
DSS
0.7
BV
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
(TH), Threshold Voltage
GS
V
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
ON resistance vs Temperature
2.5
VGS=10V
=45A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
1000
limited b y R
DSon
100
, Drain Current (A)
D
I
10
limited by R
Single pulse
T
=150°C
J
on
D
1
1 10 100 1000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10ms
100ms
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Gate Charge vs Gate to Source Voltage
14
12
ID=90A
=25°C
T
J
VCE=100V
VCE=250V
10
8
VCE=400V
1000
6
4
2
, Gate to Source Voltage (V)
GS
V
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
100
C, Capacitance (pF)
10
0 1020304050
, Drain to S ource Voltage (V)
V
DS
Crss
APT website –http://www.advancedpower.com
5–6
APTM50DHM38 – Rev 2 April, 2004
APTM50DHM38
100
Delay Times vs Current
80
(ns)
d(off)
and t
d(on)
t
60
40
20
VDS=333V
=2Ω
R
G
=125°C
T
J
L=100µH
0
20 40 60 80 100 120 140
, Drain Current (A)
I
D
Switching Energy vs Current
5
VDS=333V
=2Ω
R
G
4
=125°C
T
J
L=100µH
3
2
1
Switching Energy (mJ)
0
20 40 60 80 100 120 140
I
, Drain Current (A)
D
td(off)
td(on)
E
120
Rise and Fall times vs Current
VDS=333V
(ns)
and t
t
100
f
r
80
60
40
=2Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
20
0
20 40 60 80 100 120 140
ID, Drain Current (A)
Switching Energy vs Gate Resistance
8
VDS=333V
on
E
off
7
6
5
4
3
=90A
I
D
=125°C
T
J
L=100µH
E
off
E
on
2
Switching Energy (mJ)
1
0
0 5 10 15 20 25
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
400
350
300
250
VDS=333V
D=50%
=2Ω
R
G
=125°C
T
J
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
200
150
100
Frequency (kHz)
50
0
20 30 40 50 60 70 80
, Drain Current (A)
I
D
, Reverse Drain Current (A)
DR
I
10
1
TJ=25°C
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
, Sou rce to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered b y one or more of U.S patents 4,895,810 5,045,903 5,089, 434 5,182, 234 5,019,522
5,262,3 36 6,503,786 5,256,583 4,7 48,103 5,283,202 5, 231,474 5,434, 095 5,528,05 8 and f oreign p atents. U.S and Forei gn pate nts pendi ng. All Righ ts Reserved.
APT website –http://www.advancedpower.com
6–6
APTM50DHM38 – Rev 2 April, 2004
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