Advanced Power Technology APTM 50 DHM 38 Service Manual
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APTM50DHM38
Asymmetrical - bridge
MOSFET Power Module
OUT1
G1
VBUS 0/VBUS
S1
OUT2
S4
G4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 500 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 360
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 38
DSon
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 46 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
V
R
I
Application
Features
Benefits
= 500V
DSS
= 38mW max @ Tj = 25°C
DSon
= 90A @ Tc = 25°C
D
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Tc = 25°C 90
= 80°C 67
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM50DHM38 – Rev 2 April, 2004
APTM50DHM38
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 500 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 45A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GSS
VGS = 0V,VDS = 500V T
VGS = 0V,VDS = 400V Tj = 125°C 750
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 11.2
C
iss
C
Output Capacitance 2.4
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 246
Qgs Gate – Source Charge 66
Qgd Gate – Drain Charge
T
Turn-on Delay Time 18
d(on)
T
Rise Time 35
r
T
Turn-off Delay Time 87
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 1510
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 250V
V
Bus
= 90A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 333V
V
Bus
I
= 90A
D
= 2W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 90A, RG = 2Ω 1452
I
D
= 333V
Bus
= 25°C 150
j
38
0.18
130
77
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 2482
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 90A, RG = 2Ω
I
D
= 333V
Bus
µJ
1692
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 80°C 100 A
I
F(AV)
IF = 100A 1.6 1.8
V
ns
nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A 1.9 VF Diode Forward Voltage
I
= 100A Tj = 125°C
F
= 100A
I
F
= 400V
V
R
di/dt = 200A/µs
= 100A
I
F
V
= 400V
R
di/dt = 200A/µs
Tj = 25°C 180
T
= 125°C 220
j
Tj = 25°C 390
= 125°C 1450
T
j
1.4
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM50DHM38 – Rev 2 April, 2004
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