Advanced Power Technology APTM 50 DAM 17 Service Manual
www.DataSheet4U.com
MOSFET Power Module
Boost chopper
0/VBU SVBUS
S2
G2
OUT
APTM50DAM17
V
R
I
Application
Features
Benefits
= 500V
DSS
= 17mW max @ Tj = 25°C
DSon
= 180A @ Tc = 25°C
D
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 500 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 720
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 17
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 51 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
Tc = 25°C 180
= 80°C 135
T
c
A
mW
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website –http://www.advancedpower.com
1–6
APTM50DAM17 – Rev 1 May, 2004
APTM50DAM17
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 500 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 90A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
GSS
VGS = 0V,VDS = 500V T
VGS = 0V,VDS = 400V Tj = 125°C 1000
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 28
C
iss
C
Output Capacitance 5.6
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 560
Qgs Gate – Source Charge 160
Qgd Gate – Drain Charge
T
Turn-on Delay Time 21
d(on)
T
Rise Time 38
r
T
Turn-off Delay Time 75
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 4140
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 250V
V
Bus
= 180A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 333V
V
Bus
I
= 180A
D
= 0.5W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 180A, RG = 0.5Ω 3380
I
D
= 333V
Bus
= 25°C 200
j
17
0.36
280
93
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 6224
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 180A, RG = 0.5Ω
I
D
= 333V
Bus
µJ
4052
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 70°C 180 A
I
F(AV)
IF = 180A 1.6 1.8
V
ns
nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 360A 1.9 VF Diode Forward Voltage
I
= 180A Tj = 125°C
F
= 180A
I
F
= 400V
V
R
di/dt = 600A/µs
= 180A
I
F
V
= 400V
R
di/dt = 600A/µs
Tj = 25°C 130
T
= 125°C 170
j
Tj = 25°C 660
= 125°C 2760
T
j
1.4
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM50DAM17 – Rev 1 May, 2004
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