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OS
owe
odule
Series & parallel diodes
M
Single switch
FET P
S
G
r M
CR1SK
Q1
APTM20UM09S
V
R
I
D
Application
Features
Benefits
= 200V
DSS
= 9mΩ max @ Tj = 25°C
DSon
= 195A @ Tc = 25°C
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 780
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 9
DSon
PD Maximum Power Dissipation Tc = 25°C 780 W
IAR Avalanche current (repetitive and non repetitive) 65 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Tc = 25°C 195
= 80°C 145
T
c
A
mW
mJ
1–7
APT website –http://www.advancedpower.com
APTM20UM09S – Rev 1 May, 2004
APTM20UM09S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 74.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 4mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA
GSS
VGS = 0V,V
VGS = 0V,V
= 200V
DS
= 160V
DS
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 12.3
C
iss
C
Output Capacitance 4
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 217
Qgs Gate – Source Charge 143
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 1029
on
E
Turn-off Switching Energy v
off
E
Turn-on Switching Energy u 1351
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 195A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 195A
D
= 1.2W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 195A, RG = 1.2Ω
I
D
Bus
Inductive switching @ 125°C
V
= 15V, V
GS
= 195A, RG = 1.2Ω
I
D
Bus
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A
I
F(AV)
IF = 120A 1.1 1.15
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
IF = 240A 1.4
I
= 120A Tj = 125°C
F
= 120A
I
F
= 133V
V
R
di/dt = 400A/µs
= 120A
I
F
= 133V
V
R
di/dt = 400A/µs
Tj = 25°C
Tj = 125°C
400
2000
9
0.39
157
99
= 133V
= 133V
1011
1180
0.9
Tj = 25°C 31
= 125°C 60
T
j
Tj = 25°C 120
= 125°C 500
T
j
µA
mW
nF
nC
ns
µJ
µJ
V
ns
nC
APT website –http://www.advancedpower.com
2–7
APTM20UM09S – Rev 1 May, 2004
APTM20UM09S
Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 90°C 100 A
I
F(AV)
IF = 100A 1 1.1
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A 1.4
I
= 100A Tj = 125°C
F
= 100A
I
F
V
= 133V
R
di/dt = 200A/µs
= 100A
I
F
V
= 133V
R
di/dt = 200A/µs
Tj = 25°C 60
= 125°C 110
T
j
Tj = 25°C 200
= 125°C 840
T
j
0.9
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
Transistor
Series diode 0.46
0.16
Parallel diode 0.6
V
TJ Operating junction temperature range
T
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
2500 V
-40 150
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque
M4 1.2
M6 3 5
Wt Package Weight 400 g
V
ns
nC
°C/W
°C
N.m
APT website –http://www.advancedpower.com
3–7
APTM20UM09S – Rev 1 May, 2004
Package outline
APTM20UM09S
Mounting holes: 4xÆ6.5 mm
APT website –http://www.advancedpower.com
4–7
APTM20UM09S – Rev 1 May, 2004
Typical Performance Curve
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.1
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
APTM20UM09S
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
600
500
VGS=15 & 10V
400
300
200
, Drain Current (A)
D
I
100
0
0 2.5 5 7.5 10 12.5 15
, Drain to Source Voltage (V)
V
DS
RDS(on) vs Drain Current
1.2
Normalized to
V
1.15
=10V @ 74.5A
GS
1.1
1.05
VGS=10V
1
0.95
0.9
(on) Drain to Source ON Resistance
0 100 200 300 400
DS
I
, Drain Current (A)
D
VGS=20V
8V
7V
6V
600
500
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
300
, Drain Current (A)
D
I
200
100
0
TJ=125°C
TJ=25°C
TJ=-55°C
2345678910
, Gate to Source Voltage (V)
V
GS
DC Drain Current vs Case Temperature
200
160
120
80
40
, DC Drain Current (A)
D
I
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
APT website –http://www.advancedpower.com
5–7
APTM20UM09S – Rev 1 May, 2004
APTM20UM09S
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.2
1.1
1.0
Normalized
0.9
e
0.8
Volta
0.7
-50 -25 0 25 50 75 100 125 150
, Junction Temperature (°C)
T
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
, Case Temperature (°C)
T
C
ON resistance vs Temperature
2.5
VGS=10V
= 195A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
1000
T
, Junction Temperature (°C)
J
Maximum Safe Operating Area
limited by
R
DSon
100
10
, Drain Current (A)
D
I
Single pulse
=150°C
T
J
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
100µs
1ms
10ms
DC line
Capacitance vs Drain to Source Voltage
100000
10000
1000
C, Capacitance (pF)
100
0 1020304050
V
, Drain to S ource Voltage (V)
DS
Ciss
Coss
Crss
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
VDS=160V
10
8
ID=195A
=25°C
T
J
6
4
2
, Gate to Source Voltage (V)
GS
V
0
060120180240
Gate Charge (nC)
APT website –http://www.advancedpower.com
6–7
APTM20UM09S – Rev 1 May, 2004
APTM20UM09S
Delay Times vs Current
90
80
70
(ns)
and t
t
d(off)
d(on)
60
50
40
30
VDS=133V
=1.2Ω
R
G
=125°C
T
J
L=100µH
20
10
50 100 150 200 250 300 350
, Drain Current (A)
I
D
Switching Energy vs Current
3000
VDS=133V
=1.2Ω
R
(µJ)
off
2500
2000
G
=125°C
T
J
L=100µH
1500
and E
1000
on
E
500
Rise and Fall times vs Current
160
VDS=133V
140
td
(off)
td
(on)
(ns)
f
and t
r
t
120
100
80
60
40
=1.2Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
20
0
50 100 150 200 250 300 350
I
, Drain Current (A)
D
Switching Energy vs Gate Resistance
3500
E
on
E
off
3000
2500
VDS=133V
=195A
I
D
=125°C
T
J
L=100µH
E
off
2000
E
on
Switching Energy (µJ)
1500
0
50 100 150 200 250 300 350
ID, Drain Current (A)
Operating Frequency vs Drain Current
400
350
300
250
VDS=133V
D=50%
=1.2Ω
R
G
=125°C
T
J
200
1000
02468101214
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
10000
1000
TJ=150°C
100
TJ=25°C
150
Frequency (kHz)
100
50
0
20 40 60 80 100 120 140 160 180
, Drain Current (A)
I
D
, Reverse Drain Current (A)
DR
I
10
1
0.30.50.70.91.11.31.51.71.9
, Sou rce to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered b y one or more of U.S patents 4,895,810 5,045,903 5,089, 434 5,182, 234 5,019,522
5,262,3 36 6,503,786 5,256,583 4,7 48,103 5,283,202 5, 231,474 5,434, 095 5,528,05 8 and f oreign p atents. U.S and Forei gn pate nts pendi ng. All Righ ts Reserved.
APT website –http://www.advancedpower.com
7–7
APTM20UM09S – Rev 1 May, 2004
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