Advanced Power Technology APTM 20 UM 09 S Service Manual

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OS

owe

odule

Series & parallel diodes

M

Single switch

FET P

S

G

r M

CR1SK

Q1

APTM20UM09S

V
R
I

D

Application

Features

Benefits

= 200V

DSS

= 9mΩ max @ Tj = 25°C

DSon

= 195A @ Tc = 25°C

D

· Motor control

· Switched Mode Power Supplies

· Uninterruptible Power Supplies

®

· Power MOS 7

- Low R

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Low stray inductance

- M6 power connectors

- M4 signal connectors

· High level of integration

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

MOSFETs

DSon

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

IDM Pulsed Drain current 780

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 9

DSon

PD Maximum Power Dissipation Tc = 25°C 780 W

IAR Avalanche current (repetitive and non repetitive) 65 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Tc = 25°C 195

= 80°C 145

T

c

A

mW

mJ

1–7

APT website –http://www.advancedpower.com

APTM20UM09S – Rev 1 May, 2004

APTM20UM09S

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 74.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 4mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA

GSS

VGS = 0V,V

VGS = 0V,V

= 200V

DS

= 160V

DS

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 12.3

C

iss

C

Output Capacitance 4

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 217

Qgs Gate – Source Charge 143

Qgd Gate – Drain Charge

T

Turn-on Delay Time 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 1029

on

E

Turn-off Switching Energy v

off

E

Turn-on Switching Energy u 1351

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

= 195A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 133V

V

Bus

I

= 195A

D

= 1.2W

R

G

Inductive switching @ 25°C

V

= 15V, V

GS

= 195A, RG = 1.2Ω

I

D

Bus

Inductive switching @ 125°C

V

= 15V, V

GS

= 195A, RG = 1.2Ω

I

D

Bus

Series diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A

I

F(AV)

IF = 120A 1.1 1.15

VF Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.

IF = 240A 1.4
I

= 120A Tj = 125°C

F

= 120A

I

F

= 133V

V

R

di/dt = 400A/µs

= 120A

I

F

= 133V

V

R

di/dt = 400A/µs

Tj = 25°C

Tj = 125°C

400
2000
9

0.39

157

99

= 133V

= 133V

1011

1180

0.9

Tj = 25°C 31

= 125°C 60

T

j

Tj = 25°C 120

= 125°C 500

T

j

µA

mW

nF

nC

ns

µJ

µJ

V

ns

nC

APT website –http://www.advancedpower.com

2–7

APTM20UM09S – Rev 1 May, 2004

APTM20UM09S

Parallel diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Maximum Average Forward Current 50% duty cycle Tc = 90°C 100 A

I

F(AV)

IF = 100A 1 1.1

VF Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 200A 1.4
I

= 100A Tj = 125°C

F

= 100A

I

F

V

= 133V

R

di/dt = 200A/µs

= 100A

I

F

V

= 133V

R

di/dt = 200A/µs

Tj = 25°C 60

= 125°C 110

T

j

Tj = 25°C 200

= 125°C 840

T

j

0.9

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

Junction to Case

thJC

Transistor
Series diode 0.46

0.16

Parallel diode 0.6

V

TJ Operating junction temperature range

T

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

ISOL

2500 V

-40 150

Storage Temperature Range -40 125

STG

TC Operating Case Temperature -40 100

Torque Mounting torque

M4 1.2
M6 3 5

Wt Package Weight 400 g

V

ns

nC

°C/W

°C

N.m

APT website –http://www.advancedpower.com

3–7

APTM20UM09S – Rev 1 May, 2004