Advanced Power Technology APTM20UM04S-AlN Service Manual
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APTM20UM04S-AlN
–
S
Single switch
Series & parallel diodes
CR1SK
D
S
Q1
G
S
SK
G
D
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 1670
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 4
DSon
PD Maximum Power Dissipation Tc = 25°C 1560 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
DSS
R
DSon
= 417A @ Tc = 25°C
I
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Tc = 25°C 417
Tc = 80°C 310
= 200V
= 4mΩ max @ Tj = 25°C
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
APTM20UM04S– -AlN Rev 0 July, 2004
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APTM20UM04S-AlN
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 208.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 28.8
is s
C
Output Capacitance 9.32
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 560
Qgs Gate – Source Charge 212
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 3396
on
E
Turn-off Switching Energy Y
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 417A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 417A
RG = 1.2Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 417A, RG = 1.2Ω 3716
= 25°C 500
j
Tj = 125°C
2000
4
0.58
268
116
µA
mΩ
nF
nC
ns
µJ
E
Tur n-o n Sw i tchi ng Energy X 3744
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 417A, RG = 1.2Ω
µJ
3944
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Maximum Average Forward Current 50% duty cycle T
F(A V)
= 85°C 360 A
c
IF = 360A 1.1 1.15
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 720A 1.4 VF Diode Forward Voltage
IF = 360A Tj = 125°C
IF = 360A
Tj = 25°C 31
VR = 133V
di/dt = 1000A/µs
IF = 360A
Tj = 125°C 60
Tj = 25°C 360
VR = 133V
di/dt = 1000A/µs
Tj = 125°C 1500
0.9
V
ns
nC
APT website – http://www.advancedpower.com 2
APTM20UM04S– -AlN Rev 0 July, 2004
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