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APTM20UM03F-AlN
–
S
MOSFET Power Module
SK
S
G
DK
SK
G
Single Switch
S
D
D
DK
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 2320
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 3
DSon
PD Maximum Power Dissipation Tc = 25°C 2270 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
DSS
R
DSon
= 580A @ Tc = 25°C
I
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Tc = 25°C 580
Tc = 80°C 434
= 200V
= 3mΩ max @ Tj = 25°C
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
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APTM20UM03F-AlN
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 2mA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 290A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 15mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 43.3
is s
C
Output Capacitance 13.9
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 840
Qgs Gate – Source Charge 318
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 5
on
E
Turn-off Switching Energy Y
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 580A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 580A
RG = 0.8Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 580A, RG = 0.8Ω 5.6
= 25°C 500
j
Tj = 125°C
3000
3
0.87
402
116
µA
mΩ
nF
nC
ns
mJ
E
Tur n-o n Sw i tchi ng Energy X 5.6
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 580A, RG = 0.8Ω
mJ
5.9
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 580 IS Conti nuo us So urce current
Tc = 80°C 434
A
VSD Diode Forward Voltage VGS = 0V, IS = - 580A 1.3 V
dv/dt Peak Diode Recovery Z 8 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 580A
VR = 500V
diS/dt = 600A/µs
IS = - 580A
VR = 500V
diS/dt = 600A/µs
Tj = 25°C 230
ns
Tj = 125°C 450
Tj = 25°C 5.4
µC
Tj = 125°C 20.4
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 580A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
APT website – http://www.advancedpower.com 2
APTM20UM03F– AlN Rev 0 July, 2004
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APTM20UM03F-AlN
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case 0.055 °C/W
thJC
V
TJ Operating junction temperature range
T
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
Package outline
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
ISOL
Storage Temperature Range -40 125
STG
To heatsink M6 3 5
For terminals M5 2 3.5
2500 V
-40 150
°C
N.m
APT website – http://www.advancedpower.com 3
APTM20UM03F– AlN Rev 0 July, 2004
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Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.06
0.9
0.05
0.04
0.7
APTM20UM03F-AlN
0.03
0.02
0.01
Thermal Impedance (°C/W)
0.5
0.3
0.1
0.05
0
Single Pulse
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics Transfert Characteristics
2100
1800
VGS=15V
10V
1500
1200
900
600
, Drain Current (A)
D
I
300
0
0 4 8 12 16 20 24 28
V
, Drain to Source Voltage (V)
DS
R
vs Drain Current
DS(o n)
1.2
Normalized to
V
=10V @ 290A
GS
1.1
9V
8.5V
8V
7.5 V
7V
6.5V
VGS=10V
1400
VDS > ID(on)xRDS(on)MAX
1200
250µs pulse test @ < 0.5 duty cycle
1000
800
600
400
, Drain Current (A)
D
I
200
TJ=25°C
TJ=125°C
TJ=-55°C
0
012345678910
V
, Gate to Source Voltage (V)
GS
DC Drain Current vs Case Temperature
600
500
400
1
0.9
Drain to Source ON Resistance
0.8
0 225 450 675 900
DS(on)
R
, Drain Current (A)
I
D
VGS=20V
300
200
, DC Drain Current (A)
100
D
I
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
APT website – http://www.advancedpower.com 4
APTM20UM03F– AlN Rev 0 July, 2004
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APTM20UM03F-AlN
–
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
Normalized
1.00
e
0.95
Volta
0.90
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
ON resistance vs Temperature
2.5
VGS=10V
= 290A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
-50 -25 0 25 50 75 100 125 150
RDS(on), Drain to Source ON resistance
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
10000
limited by
1000
R
DSon
100
, Drain Current (A)
10
D
I
Single pulse
T
=150°C
J
1
1 10 100 1000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10ms
100ms
Capacitance vs Drain to Source Voltage
100000
10000
1000
C, Capacitance (pF)
100
0 1020304050
, Drain to Source Voltage (V)
V
DS
Ciss
Coss
Crss
Gate Charge vs Gate to Source Voltage
14
ID=580A
12
T
=25°C
J
VDS=100V
10
8
6
4
2
, Gate to Source Voltage (V)
GS
V
0
0 120 240 360 480 600 720 840 960
Gate Charge (nC)
VDS=40V
VDS=160V
APT website – http://www.advancedpower.com 5
APTM20UM03F– AlN Rev 0 July, 2004
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APTM20UM03F-AlN
–
t
Delay Times vs Current
120
100
(ns)
80
60
40
20
VDS=133V
=0.8Ω
R
G
=125°C
T
J
L=100µH
d(off)
and t
d(o n)
t
0
100 200 300 400 500 600 700 800 900
I
, Drain Current (A)
D
Switching Energy vs Current
12
VDS=133V
10
=0.8Ω
R
G
=125°C
T
J
8
(mJ)
off
and E
on
E
L=100µH
6
4
2
0
100 200 300 400 500 600 700 800 900
I
, Drain Current (A)
D
t
E
d(off)
t
off
d(on)
Rise and Fall times vs Current
160
VDS=133V
(ns)
f
and t
r
t
140
120
100
80
60
=0.8Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
40
20
0
100 200 300 400 500 600 700 800 900
, Drain Current (A)
I
D
Switching Energy vs Gate Resistance
20
VDS=133V
18
=580A
I
D
=125°C
T
J
16
L=100 µH
E
on
14
12
10
E
off
E
on
8
Switching Energy (mJ)
6
4
012 3456789
Gate Resistance (Ohms)
Operating Frequency vs Drain Curren
350
300
250
200
VDS=133V
150
D=50%
R
50
=0.8Ω
G
=125°C
T
J
=75°C
T
C
0
Hard
switching
100
Frequency (kHz)
ZCS
70 170 270 370 470 570
I
, Drain Current (A)
D
ZVS
, Reverse Drain Current (A)
I
Source to Drain Diode Forward Voltage
10000
TJ=150°C
1000
100
TJ=25°C
10
DR
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
, Source to Drain Voltage (V)
V
SD
APT re se rves the rig ht to c ha ng e , wi t ho ut no t ic e , the s pecificatio ns and i nfo rmatio n conta i ne d here in
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com 6
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