Advanced Power Technology APTM20UM03F-AlN Service Manual
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APTM20UM03F-AlN
–
S
MOSFET Power Module
SK
S
G
DK
SK
G
Single Switch
S
D
D
DK
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 2320
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 3
DSon
PD Maximum Power Dissipation Tc = 25°C 2270 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
DSS
R
DSon
= 580A @ Tc = 25°C
I
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Tc = 25°C 580
Tc = 80°C 434
= 200V
= 3mΩ max @ Tj = 25°C
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
APTM20UM03F– AlN Rev 0 July, 2004
6
APTM20UM03F-AlN
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 2mA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 290A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 15mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 43.3
is s
C
Output Capacitance 13.9
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 840
Qgs Gate – Source Charge 318
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 5
on
E
Turn-off Switching Energy Y
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 580A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 580A
RG = 0.8Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 580A, RG = 0.8Ω 5.6
= 25°C 500
j
Tj = 125°C
3000
3
0.87
402
116
µA
mΩ
nF
nC
ns
mJ
E
Tur n-o n Sw i tchi ng Energy X 5.6
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 580A, RG = 0.8Ω
mJ
5.9
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 580 IS Conti nuo us So urce current
Tc = 80°C 434
A
VSD Diode Forward Voltage VGS = 0V, IS = - 580A 1.3 V
dv/dt Peak Diode Recovery Z 8 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 580A
VR = 500V
diS/dt = 600A/µs
IS = - 580A
VR = 500V
diS/dt = 600A/µs
Tj = 25°C 230
ns
Tj = 125°C 450
Tj = 25°C 5.4
µC
Tj = 125°C 20.4
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 580A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
APT website – http://www.advancedpower.com 2
APTM20UM03F– AlN Rev 0 July, 2004
6
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