Advanced Power Technology APTM 20 TDUM 16 P Service Manual
www.DataSheet4U.com
–
S
Triple dual common source
MOSFET Power Module
S1/S2
D3
G3
S3
S4
G4
D4
D1
G1
S1
S2
G2
D2
G1
S1
S3/S4
S2
G2
D 3 D 5
G3
S3
S4
G4
D 1
S1/S2
D 2
S3/S4
S5/S6
D5
G5
S5
S6
G6
D6
G5
S5
S6
G6
D 6D 4
S5/S6
Application
Features
Benefits
APTM20TDUM16P
V
R
I
= 200V
DSS
= 16mΩ max @ Tj = 25°C
DSon
= 104A @ Tc = 25°C
D
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Power MOS 7® MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate c harge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- Lead frames for power connections
• High level of integration
• Outstandi ng perfor mance at hi gh freque nc y ope ration
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
commo n source configuration of t hree ti mes the
current capability
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Conti nuous Drai n Current
Tc = 25°C 104
Tc = 80°C 74
A
IDM Pulsed Drain current 416
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 16
DSon
mΩ
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures S hould Be Followed.
mJ
APT website – http://www.advancedpower.com 1
APTM20TDUM16P – Rev 0 September, 2004
6
APTM20TDUM16P
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 52A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V T
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 7220
is s
C
Output Capacitance 2330
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 140
Qgs Gate – Source Charge 53
Qgd Gate – Drain Charge
T
Tur n- o n Delay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Tur n- o n Switchi ng E nergy X 849
on
E
Turn-off Switching Energy Y
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID =104A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 104A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 104A, RG = 5Ω 929
= 25°C 250
j
= 125°C 1000
j
16
146
67
116
µA
mΩ
pF
nC
ns
µJ
E
Tur n- o n Switchi ng E nergy X 936
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 104A, RG = 5Ω
µJ
986
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Conti nuous So urce c urrent
IS
(Body diode)
Tc = 25°C 104
Tc = 80°C 74
A
VSD Diode Forward Voltage VGS = 0V, IS = - 104A 1.3 V
dv/dt Peak Diode Recovery Z 5 V/ns
trr Reverse Recovery Time Tj = 25°C 360 ns
IS = - 104A
VR = 133V
Qrr Reverse Recovery Charge
diS/dt = 100A/µs
Tj = 25°C 6.7 µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 104A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
APT website – http://www.advancedpower.com 2
APTM20TDUM16P – Rev 0 September, 2004
6
Loading...