Advanced Power Technology APTM 20 TAM 16 FP Service Manual
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APTM20TAM16FP
–
S
MOSFET Power Module
VBUS1 VBUS2 VBUS3
G1
S1
G2
S2
0/VBUS1
Triple phase leg
G5
S5
V
G6
S6
0/VBUS3
VBUS 3
G3
S3
0/VBUS 3
S4
G4
WV
VBUS 1
0/VBUS 1
G3
S3
U
G4
S4
0/VBUS2
VBUS 2
G1
S1
0/VBUS 2
S2
G2
U
W
G5
S5
S6
G6
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 416
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 16
DSon
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
I
= 200V
DSS
= 16mΩ max @ Tj = 25°C
DSon
= 104A @ Tc = 25°C
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- Lead frames for power connections
• High level of integration
Benefits
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
Tc = 25°C 104
Tc = 80°C 74
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
APTM20TAM16FP – Rev 0 September, 2004
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APTM20TAM16FP
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 52A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V T
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 7220
is s
C
Output Capacitance 2330
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 140
Qgs Gate – Source Charge 53
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 849
on
E
Turn-off Switching Energy Y
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID =104A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 104A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 104A, RG = 5Ω 929
= 25°C 250
j
= 125°C 1000
j
16
146
67
116
µA
mΩ
pF
nC
ns
µJ
E
Tur n-o n Sw i tchi ng Energy X 936
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 104A, RG = 5Ω
µJ
986
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Continuo us So ur ce c ur rent
IS
(Body diode)
Tc = 25°C 104
Tc = 80°C 74
A
VSD Diode Forward Voltage VGS = 0V, IS = - 104A 1.3 V
dv/dt Peak Diode Recovery Z 5 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 104A
VR = 133V
diS/dt = 100A/µs
IS = - 104A
VR = 133V
diS/dt = 100A/µs
Tj = 25°C 230
ns
Tj = 125°C 450
Tj = 25°C 0.9
µC
Tj = 125°C 3.4
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 104A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
APT website – http://www.advancedpower.com 2
APTM20TAM16FP – Rev 0 September, 2004
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