www.DataSheet4U.com
APTM20HM20FT
r
MOSFET Power Module
G1
S1
G2
S2
Full - Bridge
VBUS
Q1
OUT2OUT1
Q2
0/V BUSNTC1
G3
S3
VBUS
S1
G1
G4
S4
0/VB US
S2
G2
Q3
G3
S3
Q4
G4
S4
NTC2
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 356
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 20
DSon
PD Maximum Power Dissipation Tc = 25°C 357 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
V
R
I
= 200V
DSS
= 20mW max @ Tj = 25°C
DSon
= 89A @ Tc = 25°C
D
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7
- Low R
®
FREDFETs
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal fo
easy PCB mounting
· Low profile
Tc = 25°C 89
= 80°C 66
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM20HM20FT – Rev 1 May, 2004
APTM20HM20FT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 44.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GSS
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V T
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 6850
C
iss
C
Output Capacitance 2180
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 112
Qgs Gate – Source Charge 43
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 463
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 75A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 75A
D
= 5W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 75A, RG = 5Ω
I
D
= 133V
Bus
= 25°C 250
j
= 125°C 1000
j
20
97
47
99
455
µA
mW
pF
nC
ns
µJ
E
Turn-on Switching Energy u 608
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 75A, RG = 5Ω
I
D
= 133V
Bus
µJ
531
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IS Continuous Source current
(Body diode)
Tc = 25°C 89
Tc = 80°C 66
A
VSD Diode Forward Voltage VGS = 0V, IS = - 75A 1.3 V
dv/dt Peak Diode Recovery w 8 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
= - 75A
I
S
= 133V
V
R
/dt = 100A/µs
di
S
Tj = 25°C 220
= 125°C 420
T
j
Tj = 25°C 1.07
T
= 125°C 2.9
j
ns
µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS £ - 75A di/dt £ 700A/µs VR £ V
Tj £ 150°C
DSS
APT website –http://www.advancedpower.com
2–6
APTM20HM20FT – Rev 1 May, 2004
APTM20HM20FT
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Junction to Case
R
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R
Resistance @ 25°C
25
B
T
25/85
= 298.16 K 4080 K
25
R
=
R
T
exp
25
é
æ
ç
B
ê
85/25
ç
25
è
ë
T: Thermistor temperature
ù
ö
11
÷
: Thermistor value at T
R
-
T
ú
÷
TT
ø
û
Package outline
0.35 °C/W
2500 V
-40 150
°C
68
kW
APT website –http://www.advancedpower.com
3–6
APTM20HM20FT – Rev 1 May, 2004
Typical Performance Curve
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
Thermal Impedance (°C/W)
0.35
0.25
0.15
0.05
0.9
0.3
0.7
0.2
0.1
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
APTM20HM20FT
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
250
VGS=15&10V
9V
200
150
100
, Drain Current (A)
D
50
I
0
0 5 10 15 20 25
, Drain to S ource Voltage (V)
V
DS
RDS(on) vs Drain Current
1.2
Normalized to
V
1.15
=10V @ 44.5A
GS
1.1
1.05
1
0.95
0.9
(on) Drain to Source ON Resistance
0 20406080100120
DS
I
, Drain Current (A)
D
7.5V
7V
6.5V
5.5V
VGS=10V
VGS=20V
6V
200
160
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
80
, Drain Current (A)
D
I
40
TJ=25°C
TJ=125°C
TJ=-55°C
0
23456789
, Gate to Source Voltage (V)
V
GS
DC Drain Current vs Case Temperature
100
80
60
40
20
, DC Drain Current (A)
D
I
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
APT website –http://www.advancedpower.com
4–6
APTM20HM20FT – Rev 1 May, 2004
APTM20HM20FT
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.2
1.1
1.0
Normalized
0.9
e
0.8
Volta
0.7
-50 -25 0 25 50 75 100 125 150
, Junction Temperature (°C)
T
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
, Case Temperature (°C)
T
C
ON resistance vs Temperature
2.5
VGS=10V
= 44.5A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
1000
, Drain Current (A)
D
I
100
T
, Junction Temperature (°C)
J
Maximum Safe Operating Area
limited by
R
DSon
10
Single pulse
T
=150°C
J
1
1 10 100 1000
VDS, Drain to S ource Voltage (V)
100µs
1ms
10ms
DC line
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
VDS=160V
10
ID=75A
=25°C
T
J
8
6
4
100
C, Capacitance (pF)
10
0 1020304050
, Drain to S ource Voltage (V)
V
DS
Crss
2
, Gate to Source Voltage (V)
GS
V
0
0255075100125
Gate Charge (nC)
APT website –http://www.advancedpower.com
5–6
APTM20HM20FT – Rev 1 May, 2004
APTM20HM20FT
µ
µ
Delay Times vs Current
90
80
70
(ns)
and t
t
d(off)
d(on)
60
50
40
30
VDS=133V
=5Ω
R
G
=125°C
T
J
H
L=100
20
10
0 255075100125150
, Drain Current (A)
I
D
Switching Energy vs Current
1200
(µJ)
off
1000
800
VDS=133V
=5Ω
R
G
=125°C
T
J
L=100
H
E
on
600
and E
400
on
E
200
Rise and Fall times vs Current
160
VDS=133V
140
td
(off)
td
(on)
(ns)
f
and t
r
t
120
100
80
60
40
=5Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
20
0
0 255075100125150
I
, Drain Current (A)
D
Switching Energy vs Gate Resistance
1500
VDS=133V
=75A
I
E
1250
off
D
=125°C
T
J
L=100µH
1000
E
off
E
on
750
500
Switching Energy (µJ)
0
0 25 50 75 100 125 150
ID, Drain Current (A)
Operating Frequency vs Drain Current
350
300
250
VDS=133V
D=50%
=5Ω
R
G
=125°C
T
J
200
150
100
Frequency (kHz)
50
0
10 20 30 40 50 60 70 80
I
, Drain Current (A)
D
250
0 5 10 15 20 25 30 35 40
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
, Reverse Drain Current (A)
DR
I
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
, Sou rce to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered b y one or more of U.S patents 4,895,810 5,045,903 5,089, 434 5,182, 234 5,019,522
5,262,3 36 6,503,786 5,256,583 4,7 48,103 5,283,202 5, 231,474 5,434, 095 5,528,05 8 and f oreign p atents. U.S and Forei gn pate nts pendi ng. All Righ ts Reserved.
APT website –http://www.advancedpower.com
6–6
APTM20HM20FT – Rev 1 May, 2004
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