Advanced Power Technology APTM 20 HM 16 FT Service Manual

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APTM20HM16FT

r

MOSFET Power Module

G1

S1

G2

S2

Full - Bridge

VBUS

Q1

OUT2OUT1

Q2

0/VBU SNTC1

G3

S3

VBUS

S1

G1

G4

S4

0/VB US

S2

G2

Q3

G3

S3

Q4

G4

S4

NTC2

OUT2

OUT1

NTC2

NTC1

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

IDM Pulsed Drain current 416

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 16

DSon

PD Maximum Power Dissipation Tc = 25°C 390 W

IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.

V
R

I

= 200V

DSS

= 16mW max @ Tj = 25°C

DSon

= 104A @ Tc = 25°C

D

Application

· Welding converters

· Switched Mode Power Supplies

· Uninterruptible Power Supplies

Features

· Power MOS 7

- Low R

®

FREDFETs

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Very low stray inductance

- Symmetrical design

- Lead frames for power connections

· Internal thermistor for temperature monitoring

· High level of integration

Benefits

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Solderable terminals both for power and signal fo

easy PCB mounting

· Low profile

Tc = 25°C 104

= 80°C 77

T

c

A

mW

mJ

APT website –http://www.advancedpower.com

1–6

APTM20HM16FT – Rev 1 May, 2004

APTM20HM16FT

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 52A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA

GSS

VGS = 0V,VDS = 200V T

VGS = 0V,VDS = 160V T

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 7220

C

iss

C

Output Capacitance 2330

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 140

Qgs Gate – Source Charge 53

Qgd Gate – Drain Charge

T

Turn-on Delay Time 32

d(on)

T

Rise Time 64

r

T

Turn-off Delay Time 88

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 849

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

=104A

I

D

Inductive switching @ 125°C

V

= 15V

GS

= 133V

V

Bus

I

= 104A

D

= 5Ω

R

G

Inductive switching @ 25°C

V

= 15V, V

GS

= 104A, RG = 5Ω

I

D

= 133V

Bus

= 25°C 250

j

= 125°C 1000

j

16

146

67

116

929

µA

mW

pF

nC

ns

µJ

E

Turn-on Switching Energy u 936

on

E

Turn-off Switching Energy v

off

Inductive switching @ 125°C

V

= 15V, V

GS

= 104A, RG = 5Ω

I

D

= 133V

Bus

µJ

986

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Continuous Source current

IS

(Body diode)

Tc = 25°C 104
Tc = 80°C 77

A

VSD Diode Forward Voltage VGS = 0V, IS = - 104A 1.3 V

dv/dt Peak Diode Recovery w 5 V/ns

= - 104A

I

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

S

= 133V

V

R

/dt = 100A/µs

di

S

= - 104A

I

S

= 133V

V

R

/dt = 100A/µs

di

S

Tj = 25°C 230

= 125°C 450

T

j

Tj = 25°C 0.9

= 125°C 3.4

T

j

ns

µC

u Eon includes diode reverse recovery.

v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.

£ - 104A di/dt £ 700A/µs VR £ V

I

S

Tj £ 150°C

DSS

APT website –http://www.advancedpower.com

2–6

APTM20HM16FT – Rev 1 May, 2004