Advanced Power Technology APTM 20 DUM 10 T Service Manual

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r

Dual common source

MOSFET Power Module

D1

Q1

G1

S1

NTC1

D1

S1

G1

D2

Q2

S

G2

S2

S

S2

G2

NTC2

D2

D2

NTC2

NTC1

APTM20DUM10T

V
R

I

Application

Features

G2

S2

Benefits

= 200V

DSS

= 10mW max @ Tj = 25°C

DSon

= 175A @ Tc = 25°C

D

· AC Switches

· Switched Mode Power Supplies

· Uninterruptible Power Supplies

®

· Power MOS 7

- Low R

MOSFETs

DSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Very low stray inductance

- Symmetrical design

- Lead frames for power connections

· Internal thermistor for temperature monitoring

· High level of integration

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Solderable terminals both for power and signal fo

easy PCB mounting

· Low profile

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

Tc = 25°C 175

= 80°C 131

T

c

A

IDM Pulsed Drain current 700

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 10

DSon

mW

PD Maximum Power Dissipation Tc = 25°C 694 W

IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500

These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.

mJ

APT website –http://www.advancedpower.com

1–6

APTM20DUM10T – Rev 2 May, 2004

APTM20DUM10T

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 87.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GSS

VGS = 0V,VDS = 200V T

VGS = 0V,VDS = 160V T

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 13.7

C

iss

C

Output Capacitance 4.36

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 224

Qgs Gate – Source Charge 86

Qgd Gate – Drain Charge

T

Turn-on Delay Time 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 926

on

E

Turn-off Switching Energy v

off

E

Turn-on Switching Energy u 1216

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

= 150A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 133V

V

Bus

I

= 150A

D

= 2.5W

R

G

Inductive switching @ 25°C

V

= 15V, V

GS

= 150A, RG = 2.5Ω

I

D

= 133V

Bus

Inductive switching @ 125°C

V

= 15V, V

GS

= 150A, RG = 2.5Ω

I

D

= 133V

Bus

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Continuous Source current

IS

(Body diode)

VSD Diode Forward Voltage VGS = 0V, IS = - 150A 1.3 V

dv/dt Peak Diode Recovery w 5 V/ns

trr Reverse Recovery Time 284 ns

Qrr Reverse Recovery Charge

u Eon includes diode reverse recovery.

v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.

£ - 175A di/dt £ 700A/µs VR £ V

I

S

= - 150A, VR = 133V

I

S

/dt = 200A/µs

di

S

Tj £ 150°C

DSS

= 25°C 150

j

= 125°C 750

j

10

0.19

94

99

910

1062

Tc = 25°C 175
Tc = 80°C 131

6.1 µC

µA

mW

nF

nC

ns

µJ

µJ

A

APT website –http://www.advancedpower.com

2–6

APTM20DUM10T – Rev 2 May, 2004