www.DataSheet4U.com
APTM20DUM08TG
–
S
D
G1
S1
NTC1
ual common source
MOSFET Power Module
D1
Q1
D1
S1
G1
D2
Q2
G2
S2
S
NTC2
G2
S2
S
S2
G2
D2
D2
NTC 2
NTC 1
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 832
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 10
DSon
PD Maximum Power Dissipation Tc = 25°C 781 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
I
= 200V
DSS
DSon
= 208A @ Tc = 25°C
D
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Tc= 25°C 208
Tc = 80°C 155
= 8mΩ typ @ Tj = 25°C
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
APTM20DUM08TG – Rev 3 February, 2006
6
APTM20DUM08TG
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 104A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V Tj = 125°C 750
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 14.4
is s
C
Output Capacitance 4.66
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 280
Qgs Gate – Source Charge 106
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy 1698
on
E
Turn-off Switching Energy
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 208A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 208A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 208A, RG = 2.5Ω 1858
= 25°C 150
j
8 10
0.29
134
116
µA
mΩ
nF
nC
ns
µJ
E
Turn-on Switching Energy 1872
on
E
Turn-off Switching Energy
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 208A, RG = 2.5Ω
µJ
1972
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Continuo us So ur ce c ur r ent
IS
(Body diode)
VSD Diode Forward Voltage VGS = 0V, IS = - 208A 1.3 V
dv/dt Peak Diode Recovery X 5 V/ns
trr Reverse Recovery Time 360 ns
Qrr Reverse Recovery Charge
IS = - 208A, VR = 133V
diS/dt = 200A/µs
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Tc = 25°C 208
Tc = 80°C 155
13.4 µC
A
APT website – http://www.advancedpower.com 2
APTM20DUM08TG – Rev 3 February, 2006
6
APTM20DUM08TG
–
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case Thermal Resistance 0.16 °C/W
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
ISOL
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque To Heatsink M5 1.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50
B
T
25/85
= 298.15 K 3952
25
(see application note APT0406 on www.advancedpower.com for more information).
R
=
R
T
exp
25
B
85/25
25
T: Thermis tor temperat ure
RT: Thermistor value at T
11
−
TT
SP4 Package outline (dimensions in mm)
-40 150
°C
kΩ
K
ALL DI MENSIO NS MARKE D " * " ARE T OL ERENCED AS :
APT website – http://www.advancedpower.com 3
APTM20DUM08TG – Rev 3 February, 2006
6
–
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.9
0.14
0.12
0.08
0.06
0.04
Thermal Impedance (°C/W)
0.02
, Drain Current (A)
D
I
0.7
0.1
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Low Voltage Output Characteristics Transfert Characteristics
1400
VGS=15V
1200
1000
800
600
400
200
0
0 4 8 1216202428
V
, Drain to Source Voltage (V)
DS
10V
APTM20DUM08TG
Single Pulse
rectangular Pulse Duration (Seconds)
600
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
9V
8.5V
8V
7.5 V
7V
6.5V
400
300
200
, Drain Current (A)
D
I
100
TJ=25°C
TJ=125°C
0
0123 45678910
V
, Gate to Source Voltage (V)
GS
TJ=-55°C
DC Drain Current vs Case Temperature
250
200
1.2
1.1
R
DS(o n)
Normalized to
V
=10V @ 104A
GS
vs Drain Current
VGS=10 V
150
1
0.9
Drain to Source ON Resistance
0.8
0 50 100 150 200 250 300
DS(on)
R
, Drain Current (A)
I
D
VGS=20V
100
, DC Drain Current (A)
50
D
I
0
25 50 75 100 125 150
, Case Temperature (°C)
T
C
APT website – http://www.advancedpower.com 4
APTM20DUM08TG – Rev 3 February, 2006
6
APTM20DUM08TG
–
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
Normalized
1.00
e
0.95
Volta
0.90
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
ON resistance vs Temperature
2.5
VGS=10V
= 104A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
-50 -25 0 25 50 75 100 125 150
RDS(on), Drain to Source ON resistance
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
1000
limited by
R
DS on
100
10
, Drain Current (A)
D
I
Single pulse
T
=150°C
J
1
1 10 100 1000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10ms
100ms
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
14
ID=208A
12
T
=25°C
J
VDS=40V
VDS=100V
10
8
VDS=160V
6
1000
C, Capacitance (pF)
Crss
100
0 1020304050
, Drain to Source Voltage (V)
V
DS
4
2
, Gate to Source Voltage (V)
GS
V
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
APT website – http://www.advancedpower.com 5
APTM20DUM08TG – Rev 3 February, 2006
6
APTM20DUM08TG
–
t
Delay Times vs Current
120
100
80
60
40
20
VDS=133V
R
=2.5Ω
G
=125°C
T
J
L=100µH
(ns)
d(off)
and t
d(o n)
t
0
0 50 100 150 200 250 300 350
I
, Drain Current (A)
D
Switching Energy vs Current
4
VDS=133V
=2.5Ω
R
G
T
=125°C
3
J
2
1
L=100 µH
E
off
(mJ)
off
and E
on
E
0
0 5 0 100 150 200 250 3 00 350
, Drain Current (A)
I
D
t
E
d(off)
off
t
d(on)
Rise and Fall times vs Current
160
VDS=133V
140
120
100
(ns)
f
and t
r
t
80
60
=2.5Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
40
20
0
0 50 100 150 200 250 300 350
, Drain Current (A)
I
D
Switching Energy vs Gate Resistance
6
VDS=133V
=208A
I
D
5
=125°C
T
J
L=100 µH
E
on
4
3
2
Switching Energy (mJ)
E
off
E
on
1
0 5 10 15 20 25
Gate Resistance (Ohms)
Operating Frequency vs Drain Curren
350
300
250
200
VDS=133V
150
D=50%
=2.5Ω
R
G
100
Frequency (kHz)
50
=125°C
T
J
=75°C
T
C
Hard
switching
ZVS
ZCS
0
25 50 75 100 125 150 175 200
I
, Drain Current (A)
D
, Reverse Drain Current (A)
I
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
DR
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
, Source to Drain Voltage (V)
SD
APT re se rves the rig ht to c hange , wit ho ut no t ic e , the s pecificatio ns a nd i nfo rmatio n conta i ne d here in
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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APT website – http://www.advancedpower.com 6
APTM20DUM08TG – Rev 3 February, 2006
6
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