Advanced Power Technology APTM 20 DUM 08 TG Service Manual
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APTM20DUM08TG
–
S
D
G1
S1
NTC1
ual common source
MOSFET Power Module
D1
Q1
D1
S1
G1
D2
Q2
G2
S2
S
NTC2
G2
S2
S
S2
G2
D2
D2
NTC 2
NTC 1
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 832
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 10
DSon
PD Maximum Power Dissipation Tc = 25°C 781 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
I
= 200V
DSS
DSon
= 208A @ Tc = 25°C
D
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Tc= 25°C 208
Tc = 80°C 155
= 8mΩ typ @ Tj = 25°C
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com 1
APTM20DUM08TG – Rev 3 February, 2006
6
APTM20DUM08TG
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 104A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GS S
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V Tj = 125°C 750
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 14.4
is s
C
Output Capacitance 4.66
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 280
Qgs Gate – Source Charge 106
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy 1698
on
E
Turn-off Switching Energy
off
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 208A
Inductive switching @ 125°C
VGS = 15V
V
= 133V
Bus
ID = 208A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 208A, RG = 2.5Ω 1858
= 25°C 150
j
8 10
0.29
134
116
µA
mΩ
nF
nC
ns
µJ
E
Turn-on Switching Energy 1872
on
E
Turn-off Switching Energy
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 208A, RG = 2.5Ω
µJ
1972
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Continuo us So ur ce c ur r ent
IS
(Body diode)
VSD Diode Forward Voltage VGS = 0V, IS = - 208A 1.3 V
dv/dt Peak Diode Recovery X 5 V/ns
trr Reverse Recovery Time 360 ns
Qrr Reverse Recovery Charge
IS = - 208A, VR = 133V
diS/dt = 200A/µs
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Tc = 25°C 208
Tc = 80°C 155
13.4 µC
A
APT website – http://www.advancedpower.com 2
APTM20DUM08TG – Rev 3 February, 2006
6
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