Advanced Power Technology APTM 20 DUM 05 T Service Manual
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APTM20DUM05T
1 - 3
power for
Dual common source
MOSFET Power Module
DK1
NC
1
G1
SK1
NC
SK2
G2
NC
D1
S
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 700
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 5
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 333 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300
D2
DK2
NC
NTC1
NTC2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
= 200V
DSS
= 5mΩΩΩΩ max @ Tj = 25°C
DSon
ID = 333A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS V® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
Benefits
- Very rugged
• Kelvin source for easy drive
• Kelvin Drain for VDS monitoring
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• Internal thermistor for temperature monitoring
• High level of integration
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals for signal and M5 for
easy PCB mounting
Tc = 25°C 333
Tc = 80°C 249
DSon
A
mΩ
mJ
APT website – http://www.advancedpower.com
APTM20DUM05T – Rev 0 June, 2003
APTM20DUM05T
2 - 3
Electrical Characteristics All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 166.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 8mA 2 4 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±250 nA
GSS
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 40.8
iss
C
Output Capacitance 9.1
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 1184
Qgs Gate – Source Charge 376
Qgd Gate – Drain Charge
T
Turn-on Delay Time 15
d(on)
T
Rise Time 25
r
T
d(off)
T
Turn-off Delay Time 50
Fall Time
f
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
V
= 100V
Bus
ID = 333A
Resistive Switching
VGS = 15V
V
= 100V
Bus
ID = 333A
RG = 0.22 Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
VSD Diode Forward Voltage VGS = 0V, IS = - 333A 1.3 V
= - 333A, VR = 100V
I
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
S
diS/dt = 800A/µs
IS = - 333A, VR = 100V
diS/dt = 800A/µs
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
V
RMS Isolation Voltage, any terminal to case
ISOL
t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque
To heatsink M5 2 3.5
For terminals M5 2 3.5
Wt Package Weight 550 g
Tj = 25°C 300
Tj = 125°C 2000
5
3.1
600
10
Tc = 25°C 333 IS Continuous Source current
Tc = 80°C 249
160 ns
10.4 µC
0.1 °C/W
2500 V
-40 150
µA
mΩ
nF
nC
ns
A
°C
N.m
APT website – http://www.advancedpower.com
APTM20DUM05T – Rev 0 June, 2003
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