www.DataSheet4U.com
Dual common source
MOSFET Power Module
G1
S1
S2
G2
D1
S
D2
Application
Features
Benefits
APTM20DUM04
V
R
I
= 200V
DSS
= 4mW max @ Tj = 25°C
DSon
= 372A @ Tc = 25°C
D
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 1488
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 4
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
Tc = 25°C 372
= 80°C 278
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM20DUM04 – Rev 1 May, 2004
APTM20DUM04
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 186A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
GSS
VGS = 0V,VDS = 200V Tj = 25°C 200
VGS = 0V,VDS = 160V Tj = 125°C 1000
4
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 28.9
C
iss
C
Output Capacitance 9.32
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 560
Qgs Gate – Source Charge 212
Qgd Gate – Drain Charge
T
Turn-on Delay Time 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 3396
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 372A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 372A
D
= 1.2W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 372A, RG = 1.2Ω
I
D
= 133V
Bus
0.58
268
116
3716
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 3744
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 372A, RG = 1.2Ω
I
D
= 133V
Bus
µJ
3944
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IS Continuous Source current
(Body diode)
Tc = 25°C 372
Tc = 80°C 278
A
VSD Diode Forward Voltage VGS = 0V, IS = - 372A 1.3 V
dv/dt Peak Diode Recovery w 5 V/ns
= -372A, VR = 133V
I
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
S
/dt = 400A/µs
di
S
= -372A, VR = 133V
I
S
/dt = 400A/µs
di
S
360 ns
26.8 µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS £ - 372A di/dt £ 700A/µs VR £ V
Tj £ 150°C
DSS
APT website –http://www.advancedpower.com
2–6
APTM20DUM04 – Rev 1 May, 2004
APTM20DUM04
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Junction to Case
R
thJC
V
TJ Operating junction temperature range
T
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
Storage Temperature Range -40 125
STG
To heatsink M6 3 5
For terminals M5 2 3.5
Package outline
0.1 °C/W
2500 V
-40 150
°C
N.m
APT website –http://www.advancedpower.com
3–6
APTM20DUM04 – Rev 1 May, 2004
Typical Performance Curve
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
APTM20DUM04
Thermal Impedance (°C/W)
0.08
0.06
0.04
0.02
0.7
0.5
0.3
0.1
0.05
0
Single Pulse
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
1400
VGS=15V
1200
1000
800
600
400
, Drain Current (A)
D
I
200
0
0 4 8 12 16 20 24 28
, Drain to Source Voltage (V)
V
DS
10V
9V
8.5V
8V
7.5V
6.5V
7V
, Drain Current (A)
D
I
1200
1000
800
600
400
200
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
TJ=25°C
TJ=125°C
TJ=-55°C
0
012345678910
, Gate to Source Voltage (V)
V
GS
DC Drain Current vs Case Temperature
400
350
300
1.2
1.1
R
DS(on)
Normalized to
V
=10V @ 186A
GS
vs Drain Current
VGS=10V
250
1
0.9
Drain to Source ON Resistance
0.8
0 100 200 300 400 500 600
DS(on)
, Drain Current (A)
I
D
VGS=20V
200
150
100
, DC Drain Current (A)
D
I
50
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
APT website –http://www.advancedpower.com
4–6
APTM20DUM04 – Rev 1 May, 2004
APTM20DUM04
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
Normalized
1.00
e
0.95
Volta
0.90
-50 -25 0 25 50 75 100 125 150
, Junction Temperature (°C)
T
J
Threshold Vol tage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
, Case Temperature (°C)
T
C
ON resistance vs Temperature
2.5
VGS=10V
= 186A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
-50 -25 0 25 50 75 100 125 150
RDS(on), Drain to Source ON resistance
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
10000
1000
limited by
R
DSon
100
, Drain Current (A)
10
D
I
Single pulse
=150°C
T
J
1
1 10 100 1000
, Drain to S ource Voltage (V)
V
DS
100µs
1ms
10ms
100ms
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
14
12
ID=372A
=25°C
T
J
VDS=40V
VDS=100V
10
8
VDS=160V
6
1000
C, Capacitance (pF)
100
0 1020304050
, Drain to S ource Voltage (V)
V
DS
Crss
4
2
, Gate to Source Voltage (V)
GS
V
0
0 80 160 240 320 400 480 560 640
Gate Charge (nC)
APT website –http://www.advancedpower.com
5–6
APTM20DUM04 – Rev 1 May, 2004
APTM20DUM04
Delay Times vs Current
120
100
(ns)
80
VDS=133V
=1.2Ω
R
60
40
20
G
=125°C
T
J
L=100µH
d(off)
and t
d(on)
t
0
0 100 200 300 400 500 600
I
, Drain Current (A)
D
Switching Energy vs Current
8
VDS=133V
=1.2Ω
R
G
6
=125°C
T
J
(mJ)
off
and E
on
E
L=100µH
4
2
t
E
d(off)
t
off
d(on)
Rise and Fall times vs Current
160
VDS=133V
(ns)
f
and t
r
t
140
120
100
80
60
=1.2Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
40
20
0
0 100 200 300 400 500 600
I
, Drain Current (A)
D
Switching Energy vs Gate Resistance
12
VDS=133V
=372A
I
D
10
E
on
8
=125°C
T
J
L=100µH
6
4
Switching Energy (mJ)
E
off
E
on
0
0 100 200 300 400 500 600
, Drain Current (A)
I
D
Operating Frequency vs Drain Current
350
300
250
VDS=133V
D=50%
=1.2Ω
R
G
=125°C
T
J
200
2
02.557.51012.5
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
150
100
Frequency (kHz)
50
0
50 100 150 200 250 300 350
, Drain Current (A)
I
D
10
, Reverse Drain Current (A)
DR
I
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
, Source to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered b y one or more of U.S patents 4,895,810 5,045,903 5,089, 434 5,182, 234 5,019,522
5,262,3 36 6,503,786 5,256,583 4,7 48,103 5,283,202 5, 231,474 5,434, 095 5,528,05 8 and f oreign p atents. U.S and Forei gn pate nts pendi ng. All Righ ts Reserved.
APT website –http://www.advancedpower.com
6–6
APTM20DUM04 – Rev 1 May, 2004
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