Advanced Power Technology APTM 20 DUM 04 Service Manual
www.DataSheet4U.com
Dual common source
MOSFET Power Module
G1
S1
S2
G2
D1
S
D2
Application
Features
Benefits
APTM20DUM04
V
R
I
= 200V
DSS
= 4mW max @ Tj = 25°C
DSon
= 372A @ Tc = 25°C
D
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 1488
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 4
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
Tc = 25°C 372
= 80°C 278
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM20DUM04 – Rev 1 May, 2004
APTM20DUM04
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 186A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
GSS
VGS = 0V,VDS = 200V Tj = 25°C 200
VGS = 0V,VDS = 160V Tj = 125°C 1000
4
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 28.9
C
iss
C
Output Capacitance 9.32
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 560
Qgs Gate – Source Charge 212
Qgd Gate – Drain Charge
T
Turn-on Delay Time 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 3396
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 372A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 372A
D
= 1.2W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 372A, RG = 1.2Ω
I
D
= 133V
Bus
0.58
268
116
3716
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 3744
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 372A, RG = 1.2Ω
I
D
= 133V
Bus
µJ
3944
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IS Continuous Source current
(Body diode)
Tc = 25°C 372
Tc = 80°C 278
A
VSD Diode Forward Voltage VGS = 0V, IS = - 372A 1.3 V
dv/dt Peak Diode Recovery w 5 V/ns
= -372A, VR = 133V
I
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
S
/dt = 400A/µs
di
S
= -372A, VR = 133V
I
S
/dt = 400A/µs
di
S
360 ns
26.8 µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS £ - 372A di/dt £ 700A/µs VR £ V
Tj £ 150°C
DSS
APT website –http://www.advancedpower.com
2–6
APTM20DUM04 – Rev 1 May, 2004
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