Advanced Power Technology APTM 20 DHM 20 T Service Manual

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r

Asymmetrical - Bridge

MOSFET Power Module

G1

S1

0/VBUS SENSE

NTC1

Q1

CR2

VBUS
SENSE

VBUS

S1

G1

OUT1 OUT2

0/VBUS

G4

S4

0/VB US

0/VB US

SENSE

VBUS

CR3

Q4

VB US SE NSE

NTC 2

OUT2

OUT1

NTC2

NTC1

APTM20DHM20T

V
R

I

Application

Features

G4

S4

Benefits

= 200V

DSS

= 20mW max @ Tj = 25°C

DSon

= 89A @ Tc = 25°C

D

· Welding converters

· Switched Mode Power Supplies

· Switched Reluctance Motor Drives

®

· Power MOS 7

- Low R

MOSFETs

DSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Very low stray inductance

- Symmetrical design

- Lead frames for power connections

· Internal thermistor for temperature monitoring

· High level of integration

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Solderable terminals both for power and signal fo

easy PCB mounting

· Low profile

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

Tc = 25°C 89

= 80°C 66

T

c

A

IDM Pulsed Drain current 356

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 20

DSon

mW

PD Maximum Power Dissipation Tc = 25°C 357 W

IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

mJ

APT website –http://www.advancedpower.com

1–6

APTM20DHM20T – Rev 2 May, 2004

APTM20DHM20T

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 44.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA

GSS

VGS = 0V,V

VGS = 0V,V

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 6850

C

iss

C

Output Capacitance 2180

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 112

Qgs Gate – Source Charge 43

Qgd Gate – Drain Charge

T

Turn-on Delay Time 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 463

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

= 75A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 133V

V

Bus

I

= 75A

D

= 5W

R

G

Inductive switching @ 25°C

VGS = 15V, V
ID = 75A, RG = 5Ω

= 200V Tj = 25°C 100

DS

= 160V T

DS

= 125°C 500

j

20

97

47

99

= 133V

Bus

455

µA

mW

pF

nC

ns

µJ

E

Turn-on Switching Energy u 608

on

E

Turn-off Switching Energy v

off

Inductive switching @ 125°C

VGS = 15V, V

= 133V

Bus

ID = 75A, RG = 5Ω

µJ

531

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Maximum Average Forward Current 50% duty cycle

I

F(AV)

Tc = 90°C

100 A

IF = 100A 1 1.1

VF Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 200A 1.4
I

= 100A Tj = 125°C

F

= 100A

I

F

V

= 133V

R

di/dt = 200A/µs

= 100A

I

F

= 133V

V

R

di/dt = 200A/µs

Tj = 25°C 60

= 125°C 110

T

j

Tj = 25°C 200

= 125°C 840

T

j

0.9

V

ns

nC

u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.

APT website –http://www.advancedpower.com

2–6

APTM20DHM20T – Rev 2 May, 2004