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r
Asymmetrical - Bridge
MOSFET Power Module
G1
S1
0/VBUS SENSE
NTC1
Q1
CR2
VBUS
SENSE
VBUS
S1
G1
OUT1 OUT2
0/VBUS
G4
S4
0/VB US
0/VB US
SENSE
VBUS
CR3
Q4
VB US SE NSE
NTC 2
OUT2
OUT1
NTC2
NTC1
APTM20DHM20T
V
R
I
Application
Features
G4
S4
Benefits
= 200V
DSS
= 20mW max @ Tj = 25°C
DSon
= 89A @ Tc = 25°C
D
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
®
· Power MOS 7
- Low R
MOSFETs
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal fo
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
Tc = 25°C 89
= 80°C 66
T
c
A
IDM Pulsed Drain current 356
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 20
DSon
mW
PD Maximum Power Dissipation Tc = 25°C 357 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
mJ
APT website –http://www.advancedpower.com
1–6
APTM20DHM20T – Rev 2 May, 2004
APTM20DHM20T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 44.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GSS
VGS = 0V,V
VGS = 0V,V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 6850
C
iss
C
Output Capacitance 2180
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 112
Qgs Gate – Source Charge 43
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 463
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 75A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 75A
D
= 5W
R
G
Inductive switching @ 25°C
VGS = 15V, V
ID = 75A, RG = 5Ω
= 200V Tj = 25°C 100
DS
= 160V T
DS
= 125°C 500
j
20
97
47
99
= 133V
Bus
455
µA
mW
pF
nC
ns
µJ
E
Turn-on Switching Energy u 608
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 75A, RG = 5Ω
µJ
531
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle
I
F(AV)
Tc = 90°C
100 A
IF = 100A 1 1.1
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A 1.4
I
= 100A Tj = 125°C
F
= 100A
I
F
V
= 133V
R
di/dt = 200A/µs
= 100A
I
F
= 133V
V
R
di/dt = 200A/µs
Tj = 25°C 60
= 125°C 110
T
j
Tj = 25°C 200
= 125°C 840
T
j
0.9
V
ns
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM20DHM20T – Rev 2 May, 2004
APTM20DHM20T
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
Transistor
Diode 0.6
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R
Resistance @ 25°C
25
B
T
25/85
= 298.16 K 4080 K
25
R
=
R
T
exp
25
é
æ
ç
B
ê
85/25
ç
25
è
ë
T: Thermistor temperature
ù
ö
11
÷
R
-
: Thermi stor value at T
T
ú
÷
TT
ø
û
Package outline
0.35
°C/W
2500 V
-40 150
°C
68
kW
APT website –http://www.advancedpower.com
3–6
APTM20DHM20T – Rev 2 May, 2004
Typical Performance Curve
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
Thermal Impedance (°C/W)
0.35
0.25
0.15
0.05
0.9
0.3
0.7
0.2
0.1
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
APTM20DHM20T
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
250
VGS=15&10V
9V
200
150
100
, Drain Current (A)
D
50
I
0
0 5 10 15 20 25
, Drain to Source Voltage (V)
V
DS
RDS(on) vs Drain Current
1.2
Normalized to
V
1.15
=10V @ 44.5A
GS
1.1
1.05
1
0.95
0.9
(on) Drain to Source ON Resistance
0 20406080100120
DS
I
, Drain Current (A)
D
7.5V
7V
6.5V
5.5V
VGS=10V
VGS=20V
6V
200
160
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
80
, Drain Current (A)
D
I
40
TJ=25°C
TJ=125°C
TJ=-55°C
0
23456789
, Gate to Source Voltage (V)
V
GS
DC Drain Current vs Case Temperature
100
80
60
40
20
, DC Drain Current (A)
D
I
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
APT website –http://www.advancedpower.com
4–6
APTM20DHM20T – Rev 2 May, 2004
APTM20DHM20T
g
(
)
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.2
1.1
1.0
Normalized
0.9
e
0.8
Volta
0.7
-50 -25 0 25 50 75 100 125 150
, Junction Temperature (°C)
T
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
, Case Temperature (°C)
T
C
ON resistance vs Temperature
2.5
VGS=10V
= 44.5A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
1000
, Drain Current (A)
D
I
100
T
, Junction Temperature (°C)
J
Maximum Safe Operating Area
limited by
R
DSon
10
Single pulse
T
=150°C
J
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
100µs
1ms
10ms
DC line
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
VDS=160V
10
ID=75A
=25°C
T
J
8
6
4
100
C, Capacitance (pF)
10
0 1020304050
, Drain to Source Voltage (V)
V
DS
Crss
2
, Gate to Source Voltage (V)
GS
V
0
0255075100125
Gate Charge (nC)
APT website –http://www.advancedpower.com
5–6
APTM20DHM20T – Rev 2 May, 2004
APTM20DHM20T
µ
µ
Delay Times vs Current
90
80
70
(ns)
and t
t
d(off)
d(on)
60
50
40
30
VDS=133V
=5Ω
R
G
=125°C
T
J
L=100
H
20
10
0 255075100125150
, Drain Current (A)
I
D
Switching Energy vs Current
1200
(µJ)
off
1000
800
VDS=133V
=5Ω
R
G
=125°C
T
J
L=100
H
E
on
600
and E
400
on
E
200
Rise and Fall times vs Current
160
VDS=133V
140
td
(off)
td
(on)
(ns)
f
and t
r
t
120
100
80
60
40
=5Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
20
0
0 255075100125150
I
, Drain Current (A)
D
Switching Energy vs Gate Resistance
1500
VDS=133V
=75A
I
E
1250
off
D
=125°C
T
J
L=100µH
1000
E
off
E
on
750
500
Switching Energy (µJ)
0
0 25 50 75 100 125 150
ID, Drain Current (A)
Operating Frequency vs Drain Current
350
300
250
VDS=133V
D=50%
=5Ω
R
G
=125°C
T
J
200
150
100
Frequency (kHz)
50
0
10 20 30 40 50 60 70 80
I
, Drain Current (A)
D
250
0 5 10 15 20 25 30 35 40
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
, Reverse Drain Current (A)
DR
I
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
, Sou rce to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S paten ts 4,89 5,810 5,045,90 3 5,089,434 5,18 2,234 5,019,5 22
5,262,3 36 6, 503,786 5, 256,583 4,748,103 5,283,2 02 5, 231, 474 5, 434,095 5, 528,058 and foreign p atents. U.S and Forei gn patents pe ndin g. All Rights Rese rved.
APT website –http://www.advancedpower.com
6–6
APTM20DHM20T – Rev 2 May, 2004
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