Advanced Power Technology APTM 20 DHM 10 Service Manual
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APTM20DHM10
Asymmetrical - bridge
MOSFET Power Module
OUT1
G1
VBUS 0/VBUS
S1
S4
G4
OUT2
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 700
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 10
DSon
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
V
R
I
Application
Features
Benefits
= 200V
DSS
= 10mW max @ Tj = 25°C
DSon
= 175A @ Tc = 25°C
D
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Tc = 25°C 175
= 80°C 131
T
c
A
mW
mJ
APT website –http://www.advancedpower.com
1–6
APTM20DHM10 – Rev 2 May, 2004
APTM20DHM10
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 87.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GSS
VGS = 0V,VDS = 200V Tj = 25°C 150
VGS = 0V,VDS = 160V T
= 125°C 750
j
10
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 13.7
C
iss
C
Output Capacitance 4.36
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 224
Qgs Gate – Source Charge 86
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 926
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 150A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 150A
D
= 2.5W
R
G
Inductive switching @ 25°C
VGS = 15V, V
= 133V
Bus
ID = 150A, RG = 2.5Ω
0.2
94
99
910
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 1216
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
VGS = 15V, V
= 133V
Bus
ID = 150A, RG = 2.5Ω
µJ
1062
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 90°C 200 A
I
F(AV)
IF = 200A 1
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 400A 1.4
I
= 200A Tj = 125°C
F
= 200A
I
F
V
= 133V
R
di/dt = 400A/µs
= 200A
I
F
= 133V
V
R
di/dt = 400A/µs
Tj = 25°C 60
= 125°C 110
T
j
Tj = 25°C 400
= 125°C 1680
T
j
0.9
V
ns
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM20DHM10 – Rev 2 May, 2004
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