Advanced Power Technology APTM 20 DHM 08 Service Manual
www.DataSheet4U.com
Asymmetrical - bridge
MOSFET Power Module
OUT1
G1
VBUS 0/VBUS
S1
OUT2
S4
G4
APTM20DHM08
V
R
I
Application
Features
Benefits
= 200V
DSS
= 8mW max @ Tj = 25°C
DSon
= 208A @ Tc = 25°C
D
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 832
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 8
DSon
PD Maximum Power Dissipation Tc = 25°C 781 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
Tc = 25°C 208
= 80°C 155
T
c
A
mW
mJ
These Devices are sensitive to Electrostatic Discharge. Pr oper Handing Procedures Should Be Followed.
APT website –http://www.advancedpower.com
1–6
APTM20DHM08 – Rev 1 May, 2004
APTM20DHM08
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 104A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GSS
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V Tj = 125°C 750
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 14.4
C
iss
C
Output Capacitance 4.66
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 280
Qgs Gate – Source Charge 106
Qgd Gate – Drain Charge
T
Turn-on Delay Time 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 1698
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 208A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 133V
V
Bus
I
= 208A
D
= 2.5W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 208A, RG = 2.5Ω 1858
I
D
= 133V
Bus
= 25°C 150
j
8
0.30
134
116
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 1872
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 208A, RG = 2.5Ω
I
D
= 133V
Bus
µJ
1972
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 75°C 200 A
I
F(AV)
IF = 200A 1 1.1
V
ns
nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 400A 1.4 VF Diode Forward Voltage
I
= 200A Tj = 125°C
F
= 200A
I
F
= 133V
V
R
di/dt = 400A/µs
= 200A
I
F
V
= 133V
R
di/dt = 400A/µs
Tj = 25°C 60
T
= 125°C 110
j
Tj = 25°C 400
= 125°C 1680
T
j
0.9
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website –http://www.advancedpower.com
2–6
APTM20DHM08 – Rev 1 May, 2004
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