Advanced Power Technology APTM 20 DAM 10 T Service Manual

www.DataSheet4U.com

APTM20DAM10T

r

MOSFET Power Module

Boost chopper

VBUS SENSE

G2

S2

VBUS

VBUS
SENSE

Q2

0/VBUS

VBUS

CR1

G2

S2

0/VB US

S2

G2

NT C2

OUT

NT C1

OUT

OUT

NTC2

NTC1

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

IDM Pulsed Drain current 700

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 10

DSon

PD Maximum Power Dissipation Tc = 25°C 694 W

IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500

V

DSS

R

DSon

= 175A @ Tc = 25°C

I

D

Application

· AC and DC motor control

· Switched Mode Power Supplies

· Power Factor Correction

Features

· Power MOS 7

· Kelvin source for easy drive

· Very low stray inductance

· Internal thermistor for temperature monitoring

· High level of integration

Benefits

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Solderable terminals both for power and signal fo

easy PCB mounting

· Low profile

Tc = 25°C 175

= 80°C 131

T

c

= 200V

= 10mW max @ Tj = 25°C

®

MOSFETs

- Low R

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

- Symmetrical design

- Lead frames for power connections

DSon

A

mW

mJ

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website –http://www.advancedpower.com

1–6

APTM20DAM10T – Rev 2 May, 2004

APTM20DAM10T

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GSS

V

DS(on)

GS(th)

I

VGS = 0V,VDS = 200V Tj = 25°C 150

VGS = 0V,VDS = 160V T

= 10V, ID = 87.5A 10

GS

= 125°C 750

j

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 13.7

C

iss

C

Output Capacitance 4.36

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 224

Qgs Gate – Source Charge 86

Qgd Gate – Drain Charge

T

Turn-on Delay Time 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 926

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

= 150A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 133V

V

Bus

I

= 150A

D

= 2.5W

R

G

Inductive switching @ 25°C

VGS = 15V, V

= 133V

Bus

ID = 150A, RG = 2.5Ω

0.19

94

99

910

µA

mW

nF

nC

ns

µJ

E

Turn-on Switching Energy u 1216

on

E

Turn-off Switching Energy v

off

Inductive switching @ 125°C

VGS = 15V, V

= 133V

Bus

ID = 150A, RG = 2.5Ω

µJ

1062

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Maximum Average Forward Current 50% duty cycle

I

F(AV)

Tc = 85°C

120 A

IF = 120A 1.1 1.15

VF Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 240A 1.4
I

= 120A Tj = 125°C

F

= 120A

I

F

V

= 133V

R

di/dt = 400A/µs

= 120A

I

F

= 133V

V

R

di/dt = 400A/µs

Tj = 25°C 31

= 125°C 60

T

j

Tj = 25°C 120

= 125°C 500

T

j

0.9

V

ns

nC

u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.

APT website –http://www.advancedpower.com

2–6

APTM20DAM10T – Rev 2 May, 2004