Advanced Power Technology APTM 20 DAM 08 TG Service Manual

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APTM20DAM08TG

–

S

B

G2

S2

oost chopper

VBUS

CR1

Q2

0/VBUS

G2

S2

VBUS

VBUS
SENSE

0/ VB US

S2

G2

NTC2

OUT

NTC1

OUT

OUT

NTC 2

NTC 1

MOSFET Power Module

VBUS SENSE

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuo us Drain Current

IDM Pulsed Drain current 832

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 10

DSon

PD Maximum Power Dissipation Tc = 25°C 781 W

IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

V
R

I

= 200V

DSS

= 8mΩ typ @ Tj = 25°C

DSon

= 208A @ Tc = 25°C

D

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

Features

• Power MOS 7® MOSFETs

- Low R

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outsta ndi ng performa nce at hi gh fr eq ue ncy ope r ati on

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• RoHS compliant

Tc= 25°C 208
Tc = 80°C 155

DSon

A

mΩ

mJ

APT website – http://www.advancedpower.com 1

APTM20DAM08TG – Rev 3 November, 2005

6

APTM20DAM08TG

–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 104A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GS S

VGS = 0V,VDS = 200V T

VGS = 0V,VDS = 160V Tj = 125°C 750

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 14.4

is s

C

Output Capacitance 4.66

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 280

Qgs Gate – Source Charge 106

Qgd Gate – Drain C harge

T

Tur n-o n Del ay Ti me 32

d(on)

T

Rise Time 64

r

T

Turn-off Delay Time 88

d(off)

T

Fall Time

f

E

Turn-on Switching Energy 1698

on

E

Turn-off Switching Energy

off

VGS = 0V
VDS = 25V
f = 1MHz

VGS = 10V
V

= 100V

Bus

ID = 208A

Inductive switching @ 125°C

VGS = 15V
V

= 133V

Bus

ID = 208A
RG = 2.5Ω

Inductive switching @ 25°C

VGS = 15V, V

= 133V

Bus

ID = 208A, RG = 2.5Ω 1858

= 25°C 150

j

8 10

0.29

134

116

µA

mΩ

nF

nC

ns

µJ

E

Turn-on Switching Energy 1872

on

E

Turn-off Switching Energy

off

Inductive switching @ 125°C

VGS = 15V, V

= 133V

Bus

ID = 208A, RG = 2.5Ω

µJ

1972

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

Maximum Peak Repetitive Reverse Voltage 200 V

RRM

IRM Maximum Reverse Leakage Current VR=200V

IF DC Forward Current Tc = 80°C 180 A

IF = 180A 1.1 1.15
IF = 360A 1.4 VF Diode Forward Voltage
IF = 180A Tj = 125°C

trr Reverse Recovery Time

IF = 180A
VR = 133V

Qrr Reverse Recovery Charge

di/dt = 600A/µs

Tj = 25°C 500

Tj = 125°C 750

0.9

Tj = 25°C 31

Tj = 125°C 60

Tj = 25°C 180

Tj = 125°C 750

µA

V

ns

nC

APT website – http://www.advancedpower.com 2

APTM20DAM08TG – Rev 3 November, 2005

6