Advanced Power Technology APTM 20 AM 10 FT Service Manual

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APTM20AM10FT

–

S

P

MOSFET Power Module

G1

S1

G2

S2

VBUS

S1 S2

G1

hase leg

VBUS

Q1

OUT

Q2

0/VBUS NT C1

G2

S2

0/VBUS

G2

NTC2

OUT

OUT

NTC2

NTC1

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuo us Drain Current

IDM Pulsed Drain current 700

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 12

DSon

PD Maximum Power Dissipation Tc = 25°C 694 W

IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

V

DSS

R

DSon

= 175A @ Tc = 25°C

I

D

Application

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

Features

• Power MOS 7® FREDFETs

- Low R

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outsta ndi ng performa nce at hi gh fr eq ue ncy oper ati on

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power a nd signal for

easy PCB mounting

• Low profile

Tc = 25°C 175
Tc = 80°C 131

= 200V

= 10mΩ typ @ Tj = 25°C

DSon

A

mΩ

mJ

APT website – http://www.advancedpower.com 1

APTM20AM10FT – Rev 2 July, 2005

6

APTM20AM10FT

–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 87.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GS S

VGS = 0V,VDS = 200V T

VGS = 0V,VDS = 160V T

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 13.7

is s

C

Output Capacitance 4.36

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 224

Qgs Gate – Source Charge 86

Qgd Gate – Drain C harge

T

Tur n-o n Delay Ti me 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy 926

on

E

Turn-off Switching Energy

off

VGS = 0V
VDS = 25V
f = 1MHz

VGS = 10V
V

= 100V

Bus

ID = 150A

Inductive switching @ 125°C

VGS = 15V
V

= 133V

Bus

ID = 150A
RG = 2.5Ω

Inductive switching @ 25°C

VGS = 15V, V

= 133V

Bus

ID = 150A, RG = 2.5Ω 910

= 25°C 375

j

= 125°C 1500

j

10 12

0.19

94

99

µA

mΩ

nF

nC

ns

µJ

E

Turn-on Switching Energy 1216

on

E

Turn-off Switching Energy

off

Inductive switching @ 125°C

VGS = 15V, V

= 133V

Bus

ID = 150A, RG = 2.5Ω

µJ

1062

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

(Body diode)

VSD Diode Forward Voltage VGS = 0V, IS = - 150A 1.3 V

dv/dt Peak Diode Recovery X 8 V/ns

trr Reverse Recovery Time

IS = - 150A
VR = 133V

Qrr Reverse Recovery Charge

diS/dt = 200A/µs

X dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 150A di/dt ≤ 700A/µs VR ≤ V

Tj ≤ 150°C

DSS

Tc = 25°C 175 IS Continuo us Source current
Tc = 80°C 131

Tj = 25°C 220
Tj = 125°C 420
Tj = 25°C 2.14

Tj = 125°C 5.8

A

ns

µC

APT website – http://www.advancedpower.com 2

APTM20AM10FT – Rev 2 July, 2005

6