Advanced Power Technology APTM 20 AM 08 FT Service Manual
www.DataSheet4U.com
MOSFET Power Module
G1
S1
G2
S2
Phase leg
Q1
Q2
0/V BUS NTC1
G2
S2
VBUS
S1 S2
G1
0/VB US
VBUS
G2
NTC2
OUT
OUT
OUT
NTC2
NTC1
APTM20AM08FT
V
R
I
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7
· Kelvin source for easy drive
· Very low stray inductance
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
· Low profile
= 200V
DSS
= 8mW max @ Tj = 25°C
DSon
= 208A @ Tc = 25°C
D
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Symmetrical design
- Lead frames for power connections
easy PCB mounting
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
Tc = 25°C 208
= 80°C 155
T
c
A
IDM Pulsed Drain current 832
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 8
DSon
mW
PD Maximum Power Dissipation Tc = 25°C 781 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website –http://www.advancedpower.com
1–6
APTM20AM08FT – Rev 1 May, 2004
APTM20AM08FT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 104A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GSS
VGS = 0V,VDS = 200V T
VGS = 0V,VDS = 160V T
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Input Capacitance 14.4
C
iss
C
Output Capacitance 4.66
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 280
Qgs Gate – Source Charge 106
Qgd Gate – Drain Charge
T
Turn-on Delay Time 32
d(on)
T
Rise Time 64
r
T
Turn-off Delay Time 88
d(off)
T
Fall Time
f
E
Turn-on Switching Energy u 1698
on
E
Turn-off Switching Energy v
off
= 0V
V
GS
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 208A
I
D
Inductive switching @ 125°C
= 15V
V
GS
= 133V
V
Bus
I
= 208A
D
= 2.5W
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 208A, RG = 2.5Ω
I
D
= 133V
Bus
= 25°C 375
j
= 125°C 1500
j
8
0.29
134
116
1858
µA
mW
nF
nC
ns
µJ
E
Turn-on Switching Energy u 1872
on
E
Turn-off Switching Energy v
off
Inductive switching @ 125°C
V
= 15V, V
GS
= 208A, RG = 2.5Ω
I
D
= 133V
Bus
µJ
1972
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Continuous Source current
IS
(Body diode)
Tc = 25°C 208
Tc = 80°C 155
A
VSD Diode Forward Voltage VGS = 0V, IS = - 208A 1.3 V
dv/dt Peak Diode Recovery w 5 V/ns
= - 208A
I
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
S
= 133V
V
R
/dt = 200A/µs
di
S
= - 208A
I
S
= 133V
V
R
/dt = 200A/µs
di
S
Tj = 25°C 230
= 125°C 450
T
j
Tj = 25°C 1.8
= 125°C 6.8
T
j
ns
µC
u Eon includes diode reverse recover y.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
£ - 208A di/dt £ 700A/µs VR £ V
I
S
Tj £ 150°C
DSS
APT website –http://www.advancedpower.com
2–6
APTM20AM08FT – Rev 1 May, 2004
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