Advanced Power Technology APTM 20 AM 06 S Service Manual
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Series & parallel diodes
MOSFET Power Module
G1
S1
S2
G2
Phase leg
VBUS
0/VBUS
OUT
APTM20AM06S
V
R
I
Application
Features
Benefits
= 200V
DSS
= 6mW max @ Tj = 25°C
DSon
= 300A @ Tc = 25°C
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 1200
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 6
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300
Tc = 25°C 300
= 80°C 225
T
c
A
mW
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website –http://www.advancedpower.com
1-6
APTM20AM06S – Rev 1 May, 2004
APTM20AM06S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Drain - Source Breakdown Voltage VGS = 0V, ID = 1.5mA 200 V
BV
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 150A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA
GSS
VGS = 0V,V
VGS = 0V,V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 18.5
iss
C
Output Capacitance 6.03
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 325
Qgs Gate – Source Charge 144
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
Eon Turn-on Switching Energy u 1543
E
Turn-off Switching Energy v
off
Eon Turn-on Switching Energy u 2027
E
Turn-off Switching Energy v
off
VGS = 0V
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 300A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 133V
V
Bus
= 300A
I
D
= 0.8Ω
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 300A, RG = 0.8Ω
I
D
Inductive switching @ 125°C
= 15V, V
V
GS
= 300A, RG = 0.8Ω
I
D
u E
includes diode reverse recovery.
on
v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A
I
F(AV)
IF = 120A 1.1 1.15
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 240A 1.4
I
= 120A Tj = 125°C
F
I
= 120A
F
= 133V
V
R
di/dt = 400A/µs
= 200V Tj = 25°C 500 µA
DS
= 160V
DS
Tj = 125°C
3
6
mA
mW
nF
0.58
nC
156
ns
99
= 133V
Bus
= 133V
Bus
1517
1770
µJ
µJ
V
0.9
Tj = 25°C 31
ns
Tj = 125°C 60
Tj = 25°C 120
= 125°C 500
T
j
nC
APT website –http://www.advancedpower.com
2-6
APTM20AM06S – Rev 1 May, 2004
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