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Series & parallel diodes
MOSFET Power Module
G1
S1
S2
G2
Phase leg
VBUS
0/VBUS
OUT
APTM20AM06S
V
R
I
Application
Features
Benefits
= 200V
DSS
= 6mW max @ Tj = 25°C
DSon
= 300A @ Tc = 25°C
D
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
®
· Power MOS 7
- Low R
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
MOSFETs
DSon
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 200 V
DSS
ID Continuous Drain Current
IDM Pulsed Drain current 1200
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 6
DSon
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300
Tc = 25°C 300
= 80°C 225
T
c
A
mW
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website –http://www.advancedpower.com
1-6
APTM20AM06S – Rev 1 May, 2004
APTM20AM06S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Drain - Source Breakdown Voltage VGS = 0V, ID = 1.5mA 200 V
BV
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 150A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V
GS(th)
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA
GSS
VGS = 0V,V
VGS = 0V,V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 18.5
iss
C
Output Capacitance 6.03
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 325
Qgs Gate – Source Charge 144
Qgd Gate – Drain Charge
T
Turn-on Delay Time 28
d(on)
T
Rise Time 56
r
T
Turn-off Delay Time 81
d(off)
T
Fall Time
f
Eon Turn-on Switching Energy u 1543
E
Turn-off Switching Energy v
off
Eon Turn-on Switching Energy u 2027
E
Turn-off Switching Energy v
off
VGS = 0V
= 25V
V
DS
f = 1MHz
= 10V
V
GS
= 100V
V
Bus
= 300A
I
D
Inductive switching @ 125°C
V
= 15V
GS
= 133V
V
Bus
= 300A
I
D
= 0.8Ω
R
G
Inductive switching @ 25°C
V
= 15V, V
GS
= 300A, RG = 0.8Ω
I
D
Inductive switching @ 125°C
= 15V, V
V
GS
= 300A, RG = 0.8Ω
I
D
u E
includes diode reverse recovery.
on
v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A
I
F(AV)
IF = 120A 1.1 1.15
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 240A 1.4
I
= 120A Tj = 125°C
F
I
= 120A
F
= 133V
V
R
di/dt = 400A/µs
= 200V Tj = 25°C 500 µA
DS
= 160V
DS
Tj = 125°C
3
6
mA
mW
nF
0.58
nC
156
ns
99
= 133V
Bus
= 133V
Bus
1517
1770
µJ
µJ
V
0.9
Tj = 25°C 31
ns
Tj = 125°C 60
Tj = 25°C 120
= 125°C 500
T
j
nC
APT website –http://www.advancedpower.com
2-6
APTM20AM06S – Rev 1 May, 2004
APTM20AM06S
Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A
I
F(AV)
IF = 120A 1.1 1.15
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
Package outline
IF = 240A 1.4
I
= 120A Tj = 125°C
F
0.9
Tj = 25°C 31
I
= 120A
F
= 130V
V
R
di/dt = 400A/µs
Tj = 125°C 60
Tj = 25°C 120
= 125°C 500
T
j
Transistor
0.10
Diode serie 0.46
Diode parallel 0.46
2500 V
-40 150
To heatsink M6 3 5
For terminals M5 2 3.5
V
ns
nC
°C/W
°C
N.m
APT website –http://www.advancedpower.com
3-6
APTM20AM06S – Rev 1 May, 2004
Typical Performance Curve
R
0.12
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.9
APTM20AM06S
Thermal Impedance (°C/W)
0.08
0.06
0.04
0.02
0.7
0.5
0.3
Single Pulse
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
1000
800
VGS=15 &
840
720
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
600
400
, Drain Current (A)
D
200
I
0
0 2.5 5 7.5 10 12.5 15
, Drain to Source Voltage (V)
V
DS
8V
7V
6V
480
360
TJ=125°C
TJ=25°C
TJ=-55°C
, Drain Current (A)
D
I
240
120
0
2345678910
, Gate to Source Voltage (V)
V
GS
DC Drain Current vs Case Temperature
320
280
1.2
1.15
RDS(on) vs Drain Current
Normalized to
V
=10V @ 44.5A
GS
240
1.1
1.05
VGS=10V
1
0.95
0.9
(on) Drain to Source ON Resistance
0 100 200 300 400 500 600
DS
VGS=20V
I
, Drain Current (A)
D
200
160
120
80
, DC Drain Current (A)
D
I
40
0
25 50 75 100 125 150
, Case Temperature (°C)
T
C
APT website –http://www.advancedpower.com
4-6
APTM20AM06S – Rev 1 May, 2004
APTM20AM06S
g
(
)
Breakdown Voltage vs Temperature
1.2
1.1
1.0
Normalized
0.9
e
0.8
Volta
, Drain to Source Breakdown
DSS
0.7
BV
-50 -25 0 25 50 75 100 125 150
, Junction Temperature (°C)
T
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
(TH), Threshold Voltage
GS
V
0.6
-50 -25 0 25 50 75 100 125 150
, Case Temperature (°C)
T
C
ON resistance vs Temperature
2.5
VGS=10V
= 150A
I
D
2.0
1.5
1.0
(Normalized)
0.5
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
10000
1000
T
, Junction Temperature (°C)
J
Maximum Safe Operating Area
limited by
R
DSon
100
, Drain Current (A)
D
I
10
Single pulse
=150°C
T
J
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
100µs
1ms
10ms
DC line
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
VDS=160V
10
8
ID=300A
=25°C
T
J
6
1000
Crss
C, Capacitance (pF)
100
0 1020304050
V
, Drain to Source Voltage (V)
DS
4
2
, Gate to Source Voltage (V)
GS
V
0
0 60 120 180 240 300 360
Gate Charge (nC)
APT website –http://www.advancedpower.com
5-6
APTM20AM06S – Rev 1 May, 2004
APTM20AM06S
µ
µ
Delay Times vs Current
90
80
70
(ns)
and t
t
d(off)
d(on)
60
50
40
30
VDS=133V
=0.8Ω
R
G
=125°C
T
J
L=100
H
20
10
100 150 200 250 300 350 400 450 500
, Drain Current (A)
I
D
Switching Energy vs Current
4000
VDS=133V
(µJ)
off
3500
3000
2500
=0.8Ω
R
G
=125°C
T
J
L=100
H
2000
1500
and E
on
E
1000
500
0
100 150 200 250 300 350 400 450 500
ID, Drain Current (A)
Rise and Fall times vs Current
160
VDS=133V
140
td
(off)
td
(on)
(ns)
f
and t
r
t
120
100
80
60
40
=0.8Ω
R
G
=125°C
T
J
L=100µH
t
f
t
r
20
0
100 150 200 250 300 350 400 450 500
I
, Drain Current (A)
D
Switching Energy vs Gate Resistance
E
on
E
off
6000
5000
4000
VDS=133V
=300A
I
D
=125°C
T
J
L=100µH
E
off
E
on
3000
2000
Switching Energy (µJ)
1000
0246810
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
400
350
300
250
VDS=133V
D=50%
=0.8Ω
R
G
=125°C
T
J
200
Source to Drain Diode Forward Voltage
10000
1000
100
TJ=150°C
TJ=25°C
150
Frequency (kHz)
100
50
0
30 60 90 120 150 180 210 240 270
, Drain Current (A)
I
D
, Reverse Drain Current (A)
DR
I
10
1
0.30.50.70.91.11.31.51.71.9
, Sou rce to Drain Voltage (V)
V
SD
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S paten ts 4,89 5,810 5,045,90 3 5,089,434 5,18 2,234 5,019,5 22
5,262,3 36 6, 503,786 5, 256,583 4,748,103 5,283,2 02 5,231, 474 5, 434,095 5, 528,058 and foreign patents. U .S and Forei gn p atents pending. All Righ ts Rese rved.
APT website –http://www.advancedpower.com
6-6
APTM20AM06S – Rev 1 May, 2004
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