Advanced Power Technology APTM 20 AM 05 F Service Manual

www.DataSheet4U.com

APTM20AM05F

MOSFET Power Module

G1

S1

S2

G2

Phase leg

VBUS

0/VBUS

OUT

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 200 V

DSS

ID Continuous Drain Current

IDM Pulsed Drain current 1268

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 5

DSon

PD Maximum Power Dissipation Tc = 25°C 1136 W

IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

V

DSS

R

DSon

= 317A @ Tc = 25°C

I

D

Application

· Welding converters

· Switched Mode Power Supplies

· Uninterruptible Power Supplies

· Motor control

Features

· Power MOS 7

- Low R

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

· Kelvin source for easy drive

· Very low stray inductance

- Symmetrical design

- M5 power connectors

· High level of integration

Benefits

· Outstanding performance at high frequency operation

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Low profile

Tc = 25°C 317

= 80°C 237

T

c

= 200V

= 5mW max @ Tj = 25°C

®

FREDFETs

DSon

A

mW

mJ

APT website –http://www.advancedpower.com

1–6

APTM20AM05F– Rev 1 May, 2004

APTM20AM05F

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 158.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V

GS(th)

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA

GSS

VGS = 0V,VDS = 200V T

VGS = 0V,VDS = 160V

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Input Capacitance 27.4

C

iss

C

Output Capacitance 8.72

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 448

Qgs Gate – Source Charge 172

Qgd Gate – Drain Charge

T

Turn-on Delay Time 28

d(on)

T

Rise Time 56

r

T

Turn-off Delay Time 81

d(off)

T

Fall Time

f

E

Turn-on Switching Energy u 1852

on

E

Turn-off Switching Energy v

off

= 0V

V

GS

= 25V

V

DS

f = 1MHz

= 10V

V

GS

= 100V

V

Bus

= 300A

I

D

Inductive switching @ 125°C

= 15V

V

GS

= 133V

V

Bus

I

= 300A

D

= 1.2W

R

G

Inductive switching @ 25°C

V

= 15V, V

GS

= 300A, RG = 1.2Ω

I

D

= 133V

Bus

= 25°C 500

j

= 125°C

T

j

2000
5

0.38

188

99

1820

µA

mW

nF

nC

ns

µJ

E

Turn-on Switching Energy u 2432

on

E

Turn-off Switching Energy v

off

Inductive switching @ 125°C

V

= 15V, V

GS

= 300A, RG = 1.2Ω

I

D

= 133V

Bus

µJ

2124

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Continuous Source current

IS

(Body diode)

Tc = 25°C 317
Tc = 80°C 234

A

VSD Diode Forward Voltage VGS = 0V, IS = - 300A 1.3 V

dv/dt Peak Diode Recovery w 8 V/ns

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

= -300A

I

S

= 100V

V

R

/dt = 400A/µs

di

S

Tj = 25°C 220

= 125°C 420

T

j

Tj = 25°C 4.28

T

= 125°C 11.6

j

ns

µC

u Eon includes diode reverse recovery.

v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.

£ - 300A di/dt £ 700A/µs VR £ V

I

S

Tj £ 150°C

DSS

APT website –http://www.advancedpower.com

2–6

APTM20AM05F– Rev 1 May, 2004