Advanced Power Technology APTM 120 U 10 SA Service Manual

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APTM120U10SA

S

r

–

S

Single switch

Series & parallel diodes

MOSFET Power Module

CR1SK

D

S

Q1

G

S

SK

G

D

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 1200 V

DSS

ID Continuo us Drain Current

IDM Pulsed Drain current 464

VGS Gate - Source Voltage ±30 V

R

DSon

PD Maximum Power Dissipation Tc = 25°C 3290 W

IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3200

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Drain - Source ON Resistance 120

V
R

I

Application

Features

= 1200V

DSS

= 100mΩ typ @ Tj = 25°C

DSon

= 116A @ Tc = 25°C

D

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

• Power MOS 7® MOSFETs

- Low R

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- M5 power connectors

• High level of integration

• AlN substrate for MOSFET improved thermal

performance

Benefits

• Outsta ndi ng performa nce at hi g h freque nc y

operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

Tc = 25°C 116
Tc = 80°C 86

DSon

A

mΩ

mJ

, 2005

A Rev 0 Septembe

APT website – http://www.advancedpower.com 1

APTM120U10

6

APTM120U10SA

S

r

–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 58A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 20mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA

GS S

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 28.9

is s

C

Output Capacitance 4.4

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 1100

Qgs Gate – Source Charge 128

Qgd Gate – Drain C harge

T

Tur n-o n Del ay Ti me 20

d(on)

T

Rise Time 17

r

T

Turn-off Delay Time 245

d(off)

T

Fall Time

f

E

Turn-on Switching Energy 5

on

E

Turn-off Switching Energy

off

E

Turn-on Switching Energy 9.2

on

E

Turn-off Switching Energy

off

Series diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

Maximum Peak Repetitive Reverse Voltage

RRM

IRM Maximum Reverse Leakage Current VR=200V

I

Maximum Average Forward Current 50% duty cycle T

F(A V)

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0V,VDS = 1200V Tj = 25°C 1

VGS = 0V,VDS = 1000V Tj = 125°C 4

100 120

mA

mΩ

VGS = 0V
VDS = 25V
f = 1MHz

0.8

nF

VGS = 10V
V

= 600V

Bus

ID = 116A

716

nC

Inductive switching @ 125°C

VGS = 15V
V

= 800V

Bus

ns

ID = 116A
RG =1.2Ω

62

Inductive switching @ 25°C

VGS = 15V, V

= 800V

Bus

mJ

ID = 116A, RG = 1.2Ω 4.6

Inductive switching @ 125°C

VGS = 15V, V
ID = 116A, RG = 1.2Ω

= 800V

Bus

mJ

5.6

200 V

Tj = 25°C 350

Tj = 125°C 600

= 80°C 120 A

c

µA

IF = 120A 1.1 1.15
IF = 240A 1.4 VF Diode Forward Voltage
IF = 120A Tj = 125°C

IF = 120A

Tj = 25°C 31

VR = 133V

di/dt = 400A/µs

IF = 120A

Tj = 125°C 60

Tj = 25°C 120

VR = 133V

di/dt = 400A/µs

Tj = 125°C 500

0.9

V

ns

nC

, 2005

A Rev 0 Septembe

APT website – http://www.advancedpower.com 2

APTM120U10

6