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APTM 120 U 10 SA

Advanced Power Technology APTM 120 U 10 SA Service Manual

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APTM120U10SA
S
r
–
S
Single switch
Series & parallel diodes
MOSFET Power Module
CR1SK
D
S
Q1
G
S
SK
G
D
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 464
VGS Gate - Source Voltage ±30 V
R
DSon
PD Maximum Power Dissipation Tc = 25°C 3290 W
IAR Avalanche current (repetitive and non repetitive) 24 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Drain - Source ON Resistance 120
V R
I
Application
Features
= 1200V
DSS
= 100mΩ typ @ Tj = 25°C
DSon
= 116A @ Tc = 25°C
D
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
• Power MOS 7® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for MOSFET improved thermal
performance
Benefits
• Outsta ndi ng performa nce at hi g h freque nc y
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Tc = 25°C 116 Tc = 80°C 86
DSon
A
mΩ
mJ
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 58A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 20mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 28.9
is s
C
Output Capacitance 4.4
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 1100
Qgs Gate – Source Charge 128
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 20
d(on)
T
Rise Time 17
r
T
Turn-off Delay Time 245
d(off)
T
Fall Time
f
E
Turn-on Switching Energy 5
on
E
Turn-off Switching Energy
off
E
Turn-on Switching Energy 9.2
on
E
Turn-off Switching Energy
off
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
Maximum Peak Repetitive Reverse Voltage
RRM
IRM Maximum Reverse Leakage Current VR=200V
I
Maximum Average Forward Current 50% duty cycle T
F(A V)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V,VDS = 1200V Tj = 25°C 1
VGS = 0V,VDS = 1000V Tj = 125°C 4
100 120
mA
mΩ
VGS = 0V VDS = 25V f = 1MHz
0.8
nF
VGS = 10V V
= 600V
Bus
ID = 116A
716
nC
Inductive switching @ 125°C
VGS = 15V V
= 800V
Bus
ns
ID = 116A RG =1.2Ω
62
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
mJ
ID = 116A, RG = 1.2Ω 4.6
Inductive switching @ 125°C
VGS = 15V, V ID = 116A, RG = 1.2Ω
= 800V
Bus
mJ
5.6
200 V
Tj = 25°C 350
Tj = 125°C 600
= 80°C 120 A
c
µA
IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C
IF = 120A
Tj = 25°C 31
VR = 133V
di/dt = 400A/µs
IF = 120A
Tj = 125°C 60
Tj = 25°C 120
VR = 133V
di/dt = 400A/µs
Tj = 125°C 500
0.9
V
ns
nC
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Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
Maximum Peak Repetitive Reverse Voltage
RRM
IRM Maximum Reverse Leakage Current VR=1200V
I
Maximum Average Forward Current 50% duty cycle T
F(A V)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junctio n to Case
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
ISOL
TJ Operating junction temperature range
T
Storage Temperature Range -40 125
STG
TC Operating Case Temperature -40 100
Torque Mounting torque
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
1200 V Tj = 25°C 200 Tj = 125°C 750
= 80°C 180 A
c
IF = 180A 2.5 3 IF = 360A 3 VF Diode Forward Voltage IF = 180A Tj = 125°C
IF = 180A
Tj = 25°C 265
1.8
VR = 800V di/dt = 600A/µs IF = 180A
Tj = 125°C 350
Tj = 25°C 1.7
VR = 800V di/dt = 600A/µs
Tj = 125°C 8.7
Transistor 0.038 Series diode 0.46 Parallel diode 0.32
-40 150
To heatsink M6 3 5 For terminals M5 2 3.5
µA
V
ns
µC
°C/W
°C
N.m
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Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.04
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
0.035
0.03
0.025
0.02
0.015
0.01
0.005
APTM120U10SA
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
280
240
VGS=15, 10V
200
160
120
80
, Drain Curr ent (A)
D
I
40
0
0 5 10 15 20 25 30
V
, Drain to Source Voltage (V)
DS
R
vs Drain Current
1.4
1.3
1.2
DS(on)
Normalized to V
=10V @ 58A
GS
VGS=10V
1.1
1
VGS=20V
0.9
0.8 0 40 80 120 160 200 240
(on) Drain to Source ON Resistance
DS
R
I
, Drain Current (A)
D
7V
6V
5.5V
5V
4.5 V
Transfert Characteristics
320
VDS > ID(on)xRDS(on)MAX
280
250µs pulse test @ < 0.5 duty cycle
240
200
160
TJ=-55° C
120
80
, Drain Current (A)
D
I
40
TJ=125°C
TJ=25°C
0
012345 67
V
, Gate to Source Voltage (V)
GS
DC Drain Current vs Case Temperature
120
100
80
60
40
, DC Drain Current (A)
20
D
I
0
25 50 75 100 125 150
T
, Case Temperature (°C)
C
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, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
Voltage (Normalized)
0.85
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
2.5
VGS=10V
=58A
I
D
2.0
1.5
1.0
(Normalized)
0.5
ON resistance vs Temperature
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
1000
limited by RDSon
100
10
, Drain Current (A)
D
I
Single pulse T
=150°C
J
1
1 10 100 1000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10m s
1200
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=116A T
=25°C
J
VDS=600V
VDS=240V
VDS=960V
6
1000
C, Capacitance (pF)
100
0 1020304050
, Drain to Source Voltage (V)
V
DS
Crss
4
2
, Gate to Source Voltage (V)
GS
V
0
0 300 600 900 1200 1500
Gate Charge (nC)
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Delay Times vs Current
300
250
(ns)
200
150
100
VDS=800V
=1.2Ω
R
G
=125°C
T
J
L=100µH
d(off)
and t
d(on)
t
50
0
30 60 90 120 150 180
I
, Drain Current (A)
D
Switching Energy vs Current
16
VDS=800V
=1.2Ω
R
G
12
=125°C
T
J
L=100µH
8
4
Switching Energy (mJ)
0
30 60 90 120 150 180
, Drain Current (A)
I
D
100
Rise and Fall times vs Current
t
t
d(off)
d(on)
VDS=800V
=1.2Ω
R
G
80
60
(ns)
f
40
and t
r
t
=125°C
T
J
L=100µH
20
t
f
t
r
0
30 60 90 120 150 180
, Drain Current (A)
I
D
Switching Energy vs Gate Resistance
24
VDS=800V
=116A
I
D
E
on
20
=125°C
T
J
L=100µH
E
off
16
E
off
12
8
Switching Energy (mJ)
E
on
4
02468
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
175
Source to Drain Diode Forward Voltage
1000
150
125
100
75
50
Frequency (kHz)
25
switching
VDS=800V D=50%
=1.2Ω
R
G
=125°C
T
J
=75°C
T
C
Hard
ZVS
ZCS
0
30 50 70 90 110
I
, Drain Current (A)
D
100
10
, Reverse Drain Current (A)
DR
I
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
TJ=150°C
TJ=25°C
, Source to Drain Voltage (V)
V
SD
APT re se rves the rig ht to c ha ng e , wi t ho ut no t ic e , the s pecificatio ns and i nfo rmatio n conta i ne d here in
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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