Advanced Power Technology APTM120U100D-AlN Service Manual
www.DataSheet4U.com
–
–
S
Single switch
with Series diodes
MOSFET Power Module
S
SK
G
D
V
R
I
Application
Features
Benefits
APTM120U100D-AlN
= 1200V
DSS
= 100mΩ max @ Tj = 25°C
DSon
= 116A @ Tc = 25°C
D
• Zero Current Switching resonant mode
• Power MOS 7® MOSFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
DSon
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 464
VGS Gate - Source Voltage ±30 V
R
DSon
PD Maximum Power Dissipation Tc = 25°C 3290 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Drain - Source ON Resistance 100
Tc = 25°C 116
Tc = 80°C 86
APT website – http://www.advancedpower.com 1
A
mΩ
mJ
AlN Rev 0 July, 2004
APTM120U100D
6
APTM120U100D-AlN
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 58A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 20mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 28.9
is s
C
Output Capacitance 4.4
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 1100
Qgs Gate – Source Charge 128
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 20
d(on)
T
Rise Time 17
r
T
Turn-off Delay Time 245
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 5
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 1
VGS = 0V,VDS = 1000V Tj = 125°C 4
100
mA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.8
nF
VGS = 10V
V
= 600V
Bus
ID = 116A
716
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 116A
RG =1.2Ω
62
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
mJ
ID = 116A, RG = 1.2Ω 4.6
E
Tur n-o n Sw i tchi ng Energy X 9.2
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 116A, RG = 1.2Ω
mJ
5.6
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
Maximum Repetitive Reverse Voltage 1200 V
RRM
I
Maximum Average Forward Current 50% duty cycle T
F(A V)
= 70°C 180 A
c
IF = 180A 2 2.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 360A 2.3 VF Diode Forward Voltage
IF = 180A Tj = 125°C
IF = 180A
Tj = 25°C 370
VR = 800V
di/dt = 800A/µs
IF = 180A
Tj = 125°C 500
Tj = 25°C 3.9
VR = 800V
di/dt = 800A/µs
Tj = 125°C 20.7
1.8
V
ns
µC
AlN Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM120U100D
6
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