Advanced Power Technology APTM 120 TDU 57 P Service Manual

www.DataSheet4U.com

–

r

–

S

Triple dual common source

MOSFET Power Module

S1/S2

D3

G3

S3

S4

G4

D4

D1

G1

S1

S2

G2

D2

G1

S1

S3/S4

S2

G2

D 3 D 5

G3

S3

S4

G4

D 1

S1/S2

D 2

S3/S4

S5/S6

D5

G5

S5

S6

G6

D6

G5

S5

S6

G6

D 6D 4

S5/S6

V
R

I

D

Application

Features

Benefits

APTM120TDU57P

= 1200V

DSS

= 570mΩ max @ Tj = 25°C

DSon

= 17A @ Tc = 25°C

• AC Switches

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Power MOS 7® MOSFETs

- Low R

- Low input and Miller capacitance

- Low gate c harge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- Lead frames for power connections

• High level of integration

• Outstandi ng perfor mance at hi gh freque nc y ope ration

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a dual

commo n so urc e confi guratio n of three ti mes t he
current capability

DSon

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 1200 V

DSS

ID Conti nuous Drai n Current

Tc = 25°C 17
Tc = 80°C 13

IDM Pulsed Drain current 68
VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 570

DSon

PD Maximum Power Dissipation Tc = 25°C 390 W

IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures S hould Be Followed.

APT website – http://www.advancedpower.com 1

A

mΩ

mJ

, 2004

Rev 0 Septembe

APTM120TDU57P

6

APTM120TDU57P

–

r

–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 1200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 8.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA

GS S

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 5155

is s

C

Output Capacitance 770

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 187

Qgs Gate – Source Charge 24

Qgd Gate – Drain Charge

T

Tur n- o n Delay Ti me 20

d(on)

T

Rise Time 15

r

T

Turn-off Delay Time 160

d(off)

T

Fall Time

f

E

Tur n- o n Switchi ng E nergy X 990

on

E

Turn-off Switching Energy Y

off

VGS = 0V,VDS = 1200V Tj = 25°C 100

VGS = 0V,VDS = 1000V Tj = 125°C 500

570

µA

mΩ

VGS = 0V
VDS = 25V
f = 1MHz

130

pF

VGS = 10V
V

= 600V

Bus

ID = 17A

120

nC

Inductive switching @ 125°C

VGS = 15V
V

= 800V

Bus

ns

ID = 17A
RG = 5Ω

45

Inductive switching @ 25°C

VGS = 15V, V

= 800V

Bus

µJ

ID = 17A, RG = 5Ω 685

E

Tur n- o n Switchi ng E nergy X 1565

on

E

Turn-off Switching Energy Y

off

Inductive switching @ 125°C

VGS = 15V, V

= 800V

Bus

ID = 17A, RG = 5Ω

µJ

857

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

(Body diode)

Tc = 25°C 17 IS Conti nuous Source c urrent
Tc = 80°C 13

A

VSD Diode Forward Voltage VGS = 0V, IS = - 17A 1.3 V

dv/dt Peak Diode Recovery Z 10 V/ns

trr Reverse Recovery Time Tj = 25°C 1291 ns

IS = - 17A
VR = 600V

Qrr Reverse Recovery Charge

X Eon includes diode reverse recovery.

diS/dt = 100A/µs

Tj = 25°C 29 µC

, 2004

Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.

IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ V

Tj ≤ 150°C

DSS

Rev 0 Septembe

APT website – http://www.advancedpower.com 2

APTM120TDU57P

6