Advanced Power Technology APTM 120 TA 57 FP Service Manual
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APTM120TA57FP
–
r
–
S
MOSFET Power Module
VBUS1 VBUS2 VBUS3
G1
S1
G2
S2
0/VBUS1
Triple phase leg
G5
S5
V
G6
S6
0/VBUS3
VBUS 3
G3
S3
0/VBUS 3
S4
G4
WV
VBUS 1
0/VBUS 1
G3
S3
U
G4
S4
0/VBUS2
VBUS 2
G1
S1
0/VBUS 2
S2
G2
U
W
G5
S5
S6
G6
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 68
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 570
DSon
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
I
= 1200V
DSS
= 570mΩ max @ Tj = 25°C
DSon
= 17A @ Tc = 25°C
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- Lead frames for power connections
• High level of integration
Benefits
• Outsta ndi ng performa nce at hi gh freq uenc y opera tio n
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
Tc = 25°C 17
Tc = 80°C 13
A
mΩ
mJ
, 2004
Rev 0 Septembe
APT website – http://www.advancedpower.com 1
APTM120TA57FP
6
APTM120TA57FP
–
r
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 8.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 5155
is s
C
Output Capacitance 770
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 187
Qgs Gate – Source Charge 24
Qgd Gate – Drain C harge
T
Tur n-on Del a y Ti me 20
d(on)
T
Rise Time 15
r
T
Turn-off Delay Time 160
d(off)
T
Fall Time
f
E
Tur n-on Sw itchi ng Ener gy X 990
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 100
VGS = 0V,VDS = 1000V Tj = 125°C 500
570
µA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
130
pF
VGS = 10V
V
= 600V
Bus
ID = 17A
120
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 17A
RG = 5Ω
45
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
µJ
ID = 17A, RG = 5Ω 685
E
Tur n-on Sw itchi ng Ener gy X 1565
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 17A, RG = 5Ω
µJ
857
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 17 IS Continuo us So urce current
Tc = 80°C 13
A
VSD Diode Forward Voltage VGS = 0V, IS = - 17A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 17A
VR = 600V
diS/dt = 100A/µs
IS = - 17A
VR = 600V
diS/dt = 100A/µs
Tj = 25°C 320
Tj = 125°C 650
Tj = 25°C 2
Tj = 125°C 7
ns
µC
, 2004
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 Septembe
APT website – http://www.advancedpower.com 2
APTM120TA57FP
6
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