Advanced Power Technology APTM 120 SK 29 T Service Manual

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APTM120SK29T

–

–

S

B

MOSFET Power Module

uck chopper

Q1

G1

S1

0/VBU S SENSE

0/VBUS

0/ VB US

SENSE

VBUS

S1

G1

0/ VB US

0/ VB US

SENSE

VBUS

OUT

NTC2

NTC1

OUT

OUT

NTC2

NTC1

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 1200 V

DSS

ID Continuo us Drain Curre nt

IDM Pulsed Drain current 136

VGS Gate - Source Voltage ±30 V

R

Drain - Source ON Resistance 290

DSon

PD Maximum Power Dissipation Tc = 25°C 780 W

IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

V
R

I

= 1200V

DSS

= 290mΩ max @ Tj = 25°C

DSon

= 34A @ Tc = 25°C

D

Application

• AC and DC motor control

• Switched Mode Power Supplies

Features

• Power MOS 7® MOSFETs

- Low R

- Low input and Miller capacitance

- Low gate char ge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outsta ndi ng performa nce at hi gh freq ue nc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

Tc = 25°C 34
Tc = 80°C 25

DSon

A

mΩ

mJ

Rev 0 July, 2004

APT website – http://www.advancedpower.com 1

APTM120SK29T

6

APTM120SK29T

–

–

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 1200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 17A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA

GS S

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 10.3

is s

C

Output Capacitance 1.54

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 374

Qgs Gate – Source Charge 48

Qgd Gate – Drain Charge

T

Tur n-on Del a y Ti me 20

d(on)

T

Rise Time 15

r

T

Turn-off Delay Time 160

d(off)

T

Fall Time

f

E

Tur n-on Sw itchi ng Energy X 1980

on

E

Turn-off Switching Energy Y

off

VGS = 0V,VDS = 1200V Tj = 25°C 200

VGS = 0V,VDS = 1000V Tj = 125°C 1000

290

µA

mΩ

VGS = 0V
VDS = 25V
f = 1MHz

0.26

nF

VGS = 10V
V

= 600V

Bus

ID = 34A

240

nC

Inductive switching @ 125°C

VGS = 15V
V

= 800V

Bus

ns

ID = 34A
RG = 2.5Ω

45

Inductive switching @ 25°C

VGS = 15V, V

= 800V

Bus

µJ

ID = 34A, RG = 2.5Ω 1371

E

Tur n-on Sw itchi ng Energy X 3131

on

E

Turn-off Switching Energy Y

off

Inductive switching @ 125°C

VGS = 15V, V

= 800V

Bus

ID = 34A, RG = 2.5Ω

µJ

1714

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A

F(A V)

IF = 60A 2 2.5

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IF = 120A 2.3 VF Diode Forward Voltage
IF = 60A Tj = 125°C

IF = 60A

Tj = 25°C 400

VR = 800V
di/dt = 200A/µs
IF = 60A

Tj = 125°C 470

Tj = 25°C 1200

VR = 800V
di/dt = 200A/µs

Tj = 125°C 4000

1.8

V

ns

nC

X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.

Rev 0 July, 2004

APT website – http://www.advancedpower.com 2

APTM120SK29T

6