Advanced Power Technology APTM 120 JM 95 F – ALN Service Manual
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APTM120UM95F-AlN
–
–
S
MOSFET Power Module
SK
S
G
DK
SK
G
Single Switch
S
D
D
DK
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1200 V
DSS
ID Continuo us Drain Current
IDM Pulsed Drain current 412
VGS Gate - Source Voltage ±30 V
R
DSon
PD Maximum Power Dissipation Tc = 25°C 2272 W
IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Drain - Source ON Resistance 95
V
R
I
Application
Features
Benefits
= 1200V
DSS
= 95mΩ max @ Tj = 25°C
DSon
= 103A @ Tc = 25°C
D
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
• Power MOS 7® FREDFETs
- Low R
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
• Outsta ndi ng performa nce at hi gh freq uenc y opera tion
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Tc = 25°C 103
Tc = 80°C 77
DSon
A
mΩ
mJ
AlN Rev 0 July, 2004
APT website – http://www.advancedpower.com 1
APTM120UM95F
6
APTM120UM95F-AlN
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 2mA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 51.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 15mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 30.9
is s
C
Output Capacitance 4.6
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 1122
Qgs Gate – Source Charge 144
Qgd Gate – Drain C harge
T
Tur n-o n Del ay Ti me 20
d(on)
T
Rise Time 15
r
T
Turn-off Delay Time 160
d(off)
T
Fall Time
f
E
Tur n-o n Sw i tchi ng Energy X 5.9
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 0.6
VGS = 0V,VDS = 1000V Tj = 125°C 3
95
mA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.78
nF
VGS = 10V
V
= 600V
Bus
ID = 103A
720
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 103A
RG =0.8Ω
45
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
mJ
ID = 103A, RG = 0.8Ω 4.1
E
Tur n-o n Sw i tchi ng Energy X 9.4
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 103A, RG = 0.8Ω
mJ
5.14
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 103 IS Conti nuo us So urce current
Tc = 80°C 77
A
VSD Diode Forward Voltage VGS = 0V, IS = - 103A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 103A
VR = 600V
diS/dt = 600A/µs
IS = - 103A
VR = 600V
diS/dt = 600A/µs
Tj = 25°C 320
ns
Tj = 125°C 650
Tj = 25°C 12
µC
Tj = 125°C 42
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 103A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
AlN Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM120UM95F
6
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