Advanced Power Technology APTM 120 JM 95 F – ALN Service Manual

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APTM120UM95F-AlN

–

–

S

MOSFET Power Module

SK

S

G

DK

SK

G

Single Switch

S

D

D

DK

Absolute maximum ratings

ymbol Parameter Max ratings Unit

V

Drain - Source Breakdown Voltage 1200 V

DSS

ID Continuo us Drain Current

IDM Pulsed Drain current 412

VGS Gate - Source Voltage ±30 V

R

DSon

PD Maximum Power Dissipation Tc = 25°C 2272 W

IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Drain - Source ON Resistance 95

V
R

I

Application

Features

Benefits

= 1200V

DSS

= 95mΩ max @ Tj = 25°C

DSon

= 103A @ Tc = 25°C

D

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

• Power MOS 7® FREDFETs

- Low R

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symme trical design

- M5 power connectors

• High level of integration

• AlN substrate for improved thermal performance

• Outsta ndi ng performa nce at hi gh freq uenc y opera tion

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

Tc = 25°C 103
Tc = 80°C 77

DSon

A

mΩ

mJ

AlN Rev 0 July, 2004

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APTM120UM95F

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APTM120UM95F-AlN

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Drain - Source Breakdown Voltage VGS = 0V, ID = 2mA 1200 V

DSS

I

Zero Gate Voltage Drain Current

DSS

R

Drain – Source on Resistance VGS = 10V, ID = 51.5A

DS(on)

V

Gate Threshold Voltage VGS = VDS, ID = 15mA 3 5 V

GS(th )

I

Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA

GS S

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 30.9

is s

C

Output Capacitance 4.6

oss

C

Reverse Transfer Capacitance

rss

Qg Total gate Charge 1122

Qgs Gate – Source Charge 144

Qgd Gate – Drain C harge

T

Tur n-o n Del ay Ti me 20

d(on)

T

Rise Time 15

r

T

Turn-off Delay Time 160

d(off)

T

Fall Time

f

E

Tur n-o n Sw i tchi ng Energy X 5.9

on

E

Turn-off Switching Energy Y

off

VGS = 0V,VDS = 1200V Tj = 25°C 0.6

VGS = 0V,VDS = 1000V Tj = 125°C 3

95

mA

mΩ

VGS = 0V
VDS = 25V
f = 1MHz

0.78

nF

VGS = 10V
V

= 600V

Bus

ID = 103A

720

nC

Inductive switching @ 125°C

VGS = 15V
V

= 800V

Bus

ns

ID = 103A
RG =0.8Ω

45

Inductive switching @ 25°C

VGS = 15V, V

= 800V

Bus

mJ

ID = 103A, RG = 0.8Ω 4.1

E

Tur n-o n Sw i tchi ng Energy X 9.4

on

E

Turn-off Switching Energy Y

off

Inductive switching @ 125°C

VGS = 15V, V

= 800V

Bus

ID = 103A, RG = 0.8Ω

mJ

5.14

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

(Body diode)

Tc = 25°C 103 IS Conti nuo us So urce current
Tc = 80°C 77

A

VSD Diode Forward Voltage VGS = 0V, IS = - 103A 1.3 V

dv/dt Peak Diode Recovery Z 18 V/ns

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IS = - 103A
VR = 600V
diS/dt = 600A/µs
IS = - 103A
VR = 600V
diS/dt = 600A/µs

Tj = 25°C 320

ns

Tj = 125°C 650

Tj = 25°C 12

µC

Tj = 125°C 42

X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.

IS ≤ - 103A di/dt ≤ 700A/µs VR ≤ V

Tj ≤ 150°C

DSS

AlN Rev 0 July, 2004

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

Junction to Case 0.055 °C/W

thJC

V

TJ Operating junction temperature range

T

TC Operating Case Temperature -40 100

Torque Mounting torque

Wt Package Weight 280 g

Package outline

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

ISOL

Storage Temperature Range -40 125

STG

To heatsink M6 3 5
For terminals M5 2 3.5

2500 V

-40 150
°C

N.m

AlN Rev 0 July, 2004

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Typical Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.06

0.05

0.04

0.9

0.7

APTM120UM95F-AlN

0.03

0.02

0.01

Thermal Impedance (°C/W)

0.5

0.3

0.1

0.05

0

Single Pulse

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Low Voltage Output Characteristics

300

VGS=15, 10 & 8V

240

180

7V

6.5 V

480

420

360

300

Transfert Characteristics

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

240

120

, Drain Curr ent (A)

D

60

I

0

0 5 10 15 20 25 30

, Drain to Source Voltage (V)

V

DS

R

vs Drain Current

1.4

1.3

DS(on)

Normalized to
V

=10V @ 51.5A

GS

6V

5.5V

180

120

, Drain Current (A)

D

I

5V

60

0

TJ=25°C

TJ=125°C

TJ=-55°C

0123456789

V

, Gate to Source Voltage (V)

GS

DC Drain Current vs Case Temperature

120

100

1.2
VGS=10V

1.1

1

0.9

0.8

0 60 120 180 240

(on) Drain to Source ON Resistance

DS

R

I

, Drain Current (A)

D

VGS=20V

80

60

40

, DC Drain Current (A)

20

D

I

0

25 50 75 100 125 150

T

, Case Temperature (°C)

C

AlN Rev 0 July, 2004

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APTM120UM95F

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APTM120UM95F-AlN

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, Drain to Source Breakdown

DSS

BV

(TH), Threshold Voltage

GS

V

Breakdown Voltage vs Temperature

1.15

1.10

1.05

1.00

0.95

0.90

Voltage (Normalized)

0.85

-50 -25 0 25 50 75 100 125 150

T

, Junction Temperature (°C)

J

Threshold Voltage vs Temperature

1.2

1.1

1.0

0.9

0.8

(Normalized)

0.7

0.6

-50 -25 0 25 50 75 100 125 150

T

, Case Temperature (°C)

C

2.5

VGS=10V

=51.5A

I

D

2.0

1.5

1.0

(Normalized)

0.5

ON resistance vs Temperature

0.0

(on), Drain to Source ON resistance

DS

-50 -25 0 25 50 75 100 125 150

R

, Junction Temperature (°C)

T

J

Maximum Safe Operating Area

1000

limited by RDSon

100

10

, Drain Current (A)

D

I

Single pulse
T

=150°C

J

1

1 10 100 1000

, Drain to Source Voltage (V)

V

DS

100µs

1ms

10m s

1200

Capacitance vs Drain to Source Voltage

100000

10000

Ciss

Coss

Gate Charge vs Gate to Source Voltage

14

12

10

8

ID=103A
T

=25°C

J

VDS=240V

VDS=600V

VDS=960V

6

1000

C, Capacitance (pF)

100

0 1020304050

, Drain to Source Voltage (V)

V

DS

Crss

4

2

, Gate to Source Voltage (V)

GS

V

0

0 240 480 720 960 1200 1440

Gate Charge (nC)

AlN Rev 0 July, 2004

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APTM120UM95F-AlN

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Delay Times vs Current

180

150

(ns)

120

90

60

VDS=800V

=0.8Ω

R

G

=125°C

T

J

L=100µH

d(off)

and t

d(on)

t

30

0

30 60 90 120 150 180 210

I

, Drain Current (A)

D

Switching Energy vs Current

18

15

12

VDS=800V

=0.8Ω

R

G

=125°C

T

J

L=100µH

E

9

6

3

Switching Energy (mJ)

0

30 60 90 120 150 180 210

ID, Drain Current (A)

80

Rise and Fall times vs Current

VDS=800V

=0.8Ω

R

G

=125°C

T

J

60

L=100µH

(ns)

f

40

and t

r

t

t

f

t

r

20

t

d(on)

t

d(off)

0

30 60 90 120 150 180 210

, Drain Current (A)

I

D

Switching Energy vs Gate Resistance

20

VDS=800V

=103A

on

E

off

16

12

I

D

=125°C

T

J

L=100µH

E

off

E

on

8

Switching Energy (mJ)

4

0.0 1.2 2.4 3.6 4.8 6.0

Gate Resistance (Ohms)

Operating Frequency vs Drain Current

250

200

ZCS

150

VDS=800V

100

D=50%

=0.8Ω

R

Frequency (kHz)

G

=125°C

T

50

J

T

C

=75°C

Hard

switching

ZVS

0

10 25 40 55 70 85 100

ID, Drain Current (A)

Source to Drain Diode Forward Voltage

1000

TJ=150°C

100

TJ=25°C

10

, Reverse Drain Current (A)

DR

I

1

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

VSD, Source to Drain Voltage (V)

APT re se rves the rig ht to c ha ng e , wi t ho ut no t ic e , the s pecificatio ns and i nfo rmatio n conta i ne d here in

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.

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APTM120UM95F

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