Advanced Power Technology APTM 120 H 57 FT 3 Service Manual
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APTM120H57FT3
–
r
–
S
F
MOSFET Power Module
18
19
26
27
29
30
31
32
All multiple inputs and outputs must be shorted together
ull - Bridge
1413
Q1 Q3
7
22
23
Q2
29
15
28 27 26
2254
3
8
30
Example: 13/14 ; 29/30 ; 22/23 …
Q4
32
31
R1
87
16
182023 22
19
11
10
12
11
10
4
3
16
15
14
13
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdown Voltage 1200 V
DSS
ID Continuo us Drain Curre nt
IDM Pulsed Drain current 68
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 570
DSon
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
R
I
= 1200V
DSS
DSon
= 17A @ Tc = 25°C
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
• Kelvin source for easy drive
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng performa nce at hi gh freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Tc = 25°C 17
Tc = 80°C 13
= 570mΩ max @ Tj = 25°C
- Low R
- Low input and Miller capacitance
- Low gate char ge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Symme trical design
DSon
A
mΩ
mJ
, 2004
Rev 0 Septembe
APT website – http://www.advancedpower.com 1
APTM120H57FT3
6
APTM120H57FT3
–
r
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 8.5A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 5155
is s
C
Output Capacitance 770
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 187
Qgs Gate – Source Charge 24
Qgd Gate – Drain Charge
T
Tur n-on Del a y Ti me 20
d(on)
T
Rise Time 15
r
T
Turn-off Delay Time 160
d(off)
T
Fall Time
f
E
Tur n-on Sw itchi ng Energy X 990
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 100
VGS = 0V,VDS = 1000V Tj = 125°C 500
570
µA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
130
pF
VGS = 10V
V
= 600V
Bus
ID = 17A
120
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 17A
RG = 5Ω
45
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
µJ
ID = 17A, RG = 5Ω 685
E
Tur n-on Sw itchi ng Energy X 1565
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 17A, RG = 5Ω
µJ
857
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 17 IS Conti nuo us Source c urre nt
Tc = 80°C 13
A
VSD Diode Forward Voltage VGS = 0V, IS = - 17A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 17A
VR = 600V
diS/dt = 100A/µs
IS = - 17A
VR = 600V
diS/dt = 100A/µs
Tj = 25°C 320
Tj = 125°C 650
Tj = 25°C 2
Tj = 125°C 7
ns
µC
, 2004
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the li mitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 Septembe
APT website – http://www.advancedpower.com 2
APTM120H57FT3
6
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