Advanced Power Technology APTM 120 H 29 F Service Manual
www.DataSheet4U.com
–
–
S
F
MOSFET Power Module
S1
G2
S2
G1
S1
S3
G3
ull - Bridge
Q1
Q2
VBUS
OUT1
0/VBUS
VB US
OUT2
0/VBUS
Q3
Q4
OUT1
OUT2
G3G1
S3
G4
S4
G2
S2
S4
G4
APTM120H29F
V
R
I
Application
Features
Benefits
= 1200V
DSS
= 290mΩ max @ Tj = 25°C
DSon
= 34A @ Tc = 25°C
D
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
• Power MOS 7® FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate char ge
- Fast intri nsic reverse diode
- Avalanche energy rated
- Ver y rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• Outsta ndi ng perfor ma nce at hi gh freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdow n Voltage 1200 V
DSS
ID Continuo us Drain Curre nt
Tc = 25°C 34
Tc = 80°C 25
IDM Pulsed Drain current 136
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 290
DSon
PD Maximum Power Dissipation Tc = 25°C 780 W
IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures S hould Be Followed.
APT website – http://www.advancedpower.com 1
A
mΩ
mJ
Rev 0 July, 2004
APTM120H29F
6
APTM120H29F
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 17A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 10.3
is s
C
Output Capacitance 1.54
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 374
Qgs Gate – Source Charge 48
Qgd Gate – Drain Charge
T
Tur n-on Dela y Ti me 20
d(on)
T
Rise Time 15
r
T
Turn-off Delay Time 160
d(off)
T
Fall Time
f
E
Tur n-on Switchi ng Ener gy X 1980
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 200
VGS = 0V,VDS = 1000V Tj = 125°C 1000
290
µA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.26
nF
VGS = 10V
V
= 600V
Bus
ID = 34A
240
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 34A
RG = 2.5Ω
45
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
µJ
ID = 34A, RG = 2.5Ω 1371
E
Tur n-on Switchi ng Ener gy X 3131
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 34A, RG = 2.5Ω
µJ
1714
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 34 IS Continuo us So urce c ur rent
Tc = 80°C 25
A
VSD Diode Forward Voltage VGS = 0V, IS = - 34A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 34A
VR = 600V
diS/dt = 200A/µs
IS = - 34A
VR = 600V
diS/dt = 200A/µs
Tj = 25°C 320
ns
Tj = 125°C 650
Tj = 25°C 4
µC
Tj = 125°C 14
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 34A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM120H29F
6
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