www.DataSheet4U.com
–
–
S
F
MOSFET Power Module
S1
G2
S2
G1
S1
S3
G3
ull - Bridge
Q1
Q2
VBUS
OUT1
0/VBUS
VB US
OUT2
0/VBUS
Q3
Q4
OUT1
OUT2
G3G1
S3
G4
S4
G2
S2
S4
G4
APTM120H29F
V
R
I
Application
Features
Benefits
= 1200V
DSS
= 290mΩ max @ Tj = 25°C
DSon
= 34A @ Tc = 25°C
D
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
• Power MOS 7® FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate char ge
- Fast intri nsic reverse diode
- Avalanche energy rated
- Ver y rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symme trical design
- M5 power connectors
• High level of integration
• Outsta ndi ng perfor ma nce at hi gh freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
ymbol Parameter Max ratings Unit
V
Drain - Source Breakdow n Voltage 1200 V
DSS
ID Continuo us Drain Curre nt
Tc = 25°C 34
Tc = 80°C 25
IDM Pulsed Drain current 136
VGS Gate - Source Voltage ±30 V
R
Drain - Source ON Resistance 290
DSon
PD Maximum Power Dissipation Tc = 25°C 780 W
IAR Avalanche current (repetitive and non repetitive) 22 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures S hould Be Followed.
APT website – http://www.advancedpower.com 1
A
mΩ
mJ
Rev 0 July, 2004
APTM120H29F
6
APTM120H29F
–
–
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 1200 V
DSS
I
Zero Gate Voltage Drain Current
DSS
R
Drain – Source on Resistance VGS = 10V, ID = 17A
DS(on)
V
Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
GS(th )
I
Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
GS S
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 10.3
is s
C
Output Capacitance 1.54
oss
C
Reverse Transfer Capacitance
rss
Qg Total gate Charge 374
Qgs Gate – Source Charge 48
Qgd Gate – Drain Charge
T
Tur n-on Dela y Ti me 20
d(on)
T
Rise Time 15
r
T
Turn-off Delay Time 160
d(off)
T
Fall Time
f
E
Tur n-on Switchi ng Ener gy X 1980
on
E
Turn-off Switching Energy Y
off
VGS = 0V,VDS = 1200V Tj = 25°C 200
VGS = 0V,VDS = 1000V Tj = 125°C 1000
290
µA
mΩ
VGS = 0V
VDS = 25V
f = 1MHz
0.26
nF
VGS = 10V
V
= 600V
Bus
ID = 34A
240
nC
Inductive switching @ 125°C
VGS = 15V
V
= 800V
Bus
ns
ID = 34A
RG = 2.5Ω
45
Inductive switching @ 25°C
VGS = 15V, V
= 800V
Bus
µJ
ID = 34A, RG = 2.5Ω 1371
E
Tur n-on Switchi ng Ener gy X 3131
on
E
Turn-off Switching Energy Y
off
Inductive switching @ 125°C
VGS = 15V, V
= 800V
Bus
ID = 34A, RG = 2.5Ω
µJ
1714
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
(Body diode)
Tc = 25°C 34 IS Continuo us So urce c ur rent
Tc = 80°C 25
A
VSD Diode Forward Voltage VGS = 0V, IS = - 34A 1.3 V
dv/dt Peak Diode Recovery Z 18 V/ ns
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 34A
VR = 600V
diS/dt = 200A/µs
IS = - 34A
VR = 600V
diS/dt = 200A/µs
Tj = 25°C 320
ns
Tj = 125°C 650
Tj = 25°C 4
µC
Tj = 125°C 14
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 34A di/dt ≤ 700A/µs VR ≤ V
Tj ≤ 150°C
DSS
Rev 0 July, 2004
APT website – http://www.advancedpower.com 2
APTM120H29F
6
APTM120H29F
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–
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case 0.16 °C/W
thJC
V
TJ Operating junction temperature range
T
TC Operating Case Temperature -40 100
Torque Mounti ng torque
Wt Package Weight 280 g
Package outline
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
Storage Temperature Range -40 125
STG
To heatsink M6 3 5
For termi nals M5 2 3.5
2500 V
-40 150
°C
N.m
Rev 0 July, 2004
APT website – http://www.advancedpower.com 3
APTM120H29F
6
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Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
Thermal Impedance (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
APTM120H29F
Single Pulse
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
100
VGS=15, 10 & 8V
80
7V
60
40
, Drain Curr ent (A)
D
20
I
5.5V
0
0 5 10 15 20 25 30
, Drain to Source Voltage (V)
V
DS
R
vs Drain Current
1.4
1.3
1.2
DS(on)
Normalized to
V
=10V @ 17A
GS
VGS=10V
1.1
1
VGS=20V
0.9
0.8
0 20406080
(on) Drain to Source ON Resistance
DS
R
I
, Drain Current (A)
D
6.5 V
6V
5V
Transfert Characteristics
160
VDS > ID(on)xRDS(on)MAX
140
250µs pulse test @ < 0.5 duty cycle
120
100
80
60
40
, Drain Current (A)
D
I
20
TJ=25°C
TJ=125°C
TJ=-55°C
0
0123456789
V
, Gate to Source Voltage (V)
GS
DC Drain Current vs Case Temperature
40
30
20
10
, DC Drain Current (A)
D
I
0
25 50 75 100 125 150
, Case Temperature (°C)
T
C
Rev 0 July, 2004
APT website – http://www.advancedpower.com 4
APTM120H29F
6
APTM120H29F
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–
, Drain to Source Breakdown
DSS
BV
(TH), Threshold Voltage
GS
V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
Voltage (Normalized)
0.85
-50 -25 0 25 50 75 100 125 150
T
, Junction Temperature (°C)
J
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
(Normalized)
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, Case Temperature (°C)
C
2.5
VGS=10V
=17A
I
D
2.0
1.5
1.0
(Normalized)
0.5
ON resistance vs Temperature
0.0
(on), Drain to Source ON resistance
DS
-50 -25 0 25 50 75 100 125 150
R
, Junction Temperature (°C)
T
J
Maximum Safe Operating Area
1000
100
limited by RDSon
10
, Drain Current (A)
D
I
Single pulse
T
=150°C
J
1
1 10 100 1000
, Drain to Source Voltage (V)
V
DS
100µs
1ms
10m s
1200
Capacitance vs Drain to Source Voltage
100000
10000
1000
C, Capacitance (pF)
100
0 1020304050
, Drain to Source Voltage (V)
V
DS
Ciss
Coss
Crss
Gate Charge vs Gate to Source Voltage
14
12
10
ID=34A
T
=25°C
J
VDS=240V
VDS=600V
8
6
4
2
, Gate to Source Voltage (V)
GS
V
0
0 80 160 240 320 400 480
Gate Charge (nC)
VDS=960V
Rev 0 July, 2004
APT website – http://www.advancedpower.com 5
APTM120H29F
6
APTM120H29F
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–
Delay Times vs Current
180
150
(ns)
120
90
60
VDS=800V
=2.5Ω
R
G
=125°C
T
J
L=100µH
d(off)
and t
d(on)
t
30
0
10 20 30 40 50 60 70
I
, Drain Current (A)
D
Switching Energy vs Current
6
5
4
VDS=800V
=2.5Ω
R
G
=125°C
T
J
L=100 µH
E
3
2
1
Switching Energy (mJ)
0
10 20 30 40 50 60 70
I
, Drain Current (A)
D
80
Rise and Fall times vs Current
VDS=800V
=2.5Ω
R
G
=125°C
T
J
60
L=100µH
(ns)
f
40
and t
r
t
t
f
t
r
20
t
d(on)
t
d(off)
0
10 20 30 40 50 60 70
, Drain Current (A)
I
D
Switching Energy vs Gate Resistance
7
VDS=800V
=34A
I
on
E
off
6
D
=125°C
T
J
5
L=100µH
4
E
off
E
on
3
2
Switching Energy (mJ)
1
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
225
Source to Drain Diode Forward Voltage
1000
200
=2.5Ω
G
=125°C
J
=75°C
C
ZCS
Hard
switching
, Drain Current (A)
I
D
ZVS
100
TJ=150°C
TJ=25°C
10
, Reverse Drain Current (A)
DR
I
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
, Source to Drain Voltage (V)
V
SD
175
150
125
100
VDS=800V
D=50%
75
R
Frequency (kHz)
50
T
25
T
0
8 121620242832
APT re se rves the right to c ha nge , witho ut notice , the s pe cifica tions an d info rmatio n conta i ne d herein
APT's products are covered by one or more of U.S patents 4,895, 810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Rev 0 July, 2004
APT website – http://www.advancedpower.com 6
APTM120H29F
6
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