ADVANCED POWER TECHNOLOGY APT80GP60B2 Service Manual
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APT80GP60B2
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
T-Max
600V
TM
• Low Conduction Loss •200 kHz operation @ 400V, 45A
C
• Low Gate Charge •100 kHz operation @ 400V, 72A
• Ultrafast Tail Current shutoff •SSOA rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
TJ,T
T
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
7
@ TC = 25°C
7
@ TC = 110°C
1
@ TC = 25°C
= 150°C
J
APT80GP60B2
600
±20
±30
100
100
330
330A @ 600V
1041
-55 to 150
300
G
UNIT
Volts
Amps
Watts
°C
C
E
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 80A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 2.5mA, Tj = 25°C)
CE
APT Website - http://www.advancedpower.com
= 0V, IC = 1.0mA)
GE
2
2
MIN TYP MAX
600
3 4.5 6
2.2 2.7
2.1
1.0
5
±100
UNIT
Volts
mA
nA
050-7425 Rev B 10-2003
DYNAMIC CHARACTERISTICS
APT80GP60B2
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
6
5
5
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
= 15V
V
GE
V
= 300V
CE
I
= 80A
C
TJ = 150°C, R
15V, L = 100µH,V
= 5Ω, V
G
CE
GE
= 600V
Inductive Switching (25°C)
V
= 400V
CC
V
= 15V
GE
I
= 80A
C
R
= 5Ω
G
T
= +25°C
J
Inductive Switching (125°C)
V
= 400V
CC
V
= 15V
GE
I
= 80A
C
R
= 5Ω
G
T
= +125°C
J
MIN TYP MAX
9840
735
40
7.5
280
65
85
=
330
29
40
116
78
795
1536
1199
29
40
149
84
795
2153
1690
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJC
W
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4E
on1
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2
loss. A Combi device is used for the clamping diode as shown in the E
6E
off
7 Countinous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
MIN TYP MAX
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
T
includes both IGBT and FRED leakages
ces
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
test circuit. (See Figures 21, 22.)
on2
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
.12
N/A
5.9
UNIT
°C/W
gm
050-7425 Rev B 10-2003
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