ADVANCED POWER TECHNOLOGY APT8011JFLL Service Manual

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APT8011JFLL

800V 51A 0.1 10W

POWER MOS 7

TM

FREDFET

S

S

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

G

D

SOT-227

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

ISOTOP

®

"UL Recognized"

D

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

G

APT8011JFLL

800

51
204
±30
±40
690

5.52

-55 to 150
300

51
50

3600

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

800

51

35

0.110
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7094 Rev - 9-2001

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 15V

DSS

DSS

APT8011JFLL

MIN TYP MAX

10020

1930

317
369

48

209

23
23
83
19

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

T

= 25°C 560

j

T

= 125°C 1600

j

T

= 25°C 2.5

j

T

= 125°C 17.7

j

T

= 25°C 16.1

j

T

= 125°C 36.2

j

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 2.77mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

0.75 (.030)

0.85 (.033)

r = 4.0 (.157)
(2 places)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

D[Cont.

Hex Nut M4
(4 places)

12.6 (.496)

12.8 (.504)

MIN TYP MAX

MIN TYP MAX

25W, Peak IL = 51A

G

=

di

/

£ 700A/µs V

dt

]

25.2 (0.992)

25.4 (1.000)

R

£ V

51

204

1.3
18

0.18
40

DSS

T

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

£ 150°C

J

3.3 (.129)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7094 Rev - 9-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

3.6 (.143)

* Source Drain

* Source

1.95 (.077)

2.14 (.084)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate