APT30M75BFLL
APT30M75SFLL
300V 44A 0.075
BFLL
ΩΩ
Ω
ΩΩ
POWER MOS 7 R FREDFET
®
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7
is a new generation of low loss, high voltage, N-Channel
®
®
combines lower conduction and switching losses
by significantly lowering R
DS(ON)
TO-247
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg •TO-247 or Surface Mount D
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
3
PAK Package
APT30M75
300
44
176
±30
±40
329
2.63
-55 to 150
300
44
30
1300
D3PAK
SFLL
D
G
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
> I
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
x R
D(on)
2
(VGS = 10V, 22A)
= 300V, VGS = 0V)
DS
= 240V, VGS = 0V, TC = 125°C)
DS
Max, VGS = 10V)
DS(on)
= 0V)
DS
MIN TYP MAX
300
44
35
0.075
250
1000
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-7164 Rev A 1-2003
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DS
f = 1 MHz
V
GS
V
DD
ID = 44A @ 25°C
V
GS
V
DD
I
= 44A @ 25°C
D
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
= 0V
GS
= 25V
= 10V
= 200V
= 15V
= 200V
= 0.6Ω
APT30M75 BFLL - SFLL
MIN TYP MAX
3018
771
43
57
21
23
13
3
20
2
UNIT
pF
nC
ns
Symbol
I
I
SM
V
dv
t
Q
I
RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage
SD
Peak Diode Recovery dv/
/
dt
1
(Body Diode)
2
dt
Reverse Recovery Time
rr
= -44A, di/dt = 100A/µs)
(I
S
Reverse Recovery Charge
rr
(IS = -44A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -44A, di/dt = 100A/µs)
(VGS = 0V, IS = -44A)
5
T
= 25°C 200
j
T
= 125°C 400
j
T
= 25°C 1.1
j
T
= 125°C 2.7
j
T
= 25°C 10
j
T
= 125°C 15.1
j
THERMAL CHARACTERISTICS
Symbol
R
R
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
4 Starting T
dv
5
/
dt
device itself. I
+25°C, L = 1.34mH, R
j
=
numbers reflect the limitations of the test circuit rather than the
≤ -I
S
44A
D
MIN TYP MAX
MIN TYP MAX
25Ω, Peak IL = 44A
G
=
di
/
≤ 700A/µs V
dt
R
≤ V
176
0.38
DSS
44
1.3
8
40
T
Amps
Amps
≤ 150°C
J
UNIT
Volts
V/ns
ns
µC
UNIT
°C/W
050-7164 Rev A 1-2003
0.40
0.35
0.30
0.25
0.20
0.15
, THERMAL IMPEDANCE (°C/W)
0.10
JC
θ
Z
0.05
0
-5
10
0.9
0.7
0.5
0.3
0.1
0.05
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
-3
10
-2
10
-1
10
1.0
Typical Performance Curves
RC MODEL
0.0329
Junction
temp. ( ”C)
Power
(Watts)
0.158
0.189
Case temperature
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
160
VDS> ID (ON) x R
140
120
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS(ON)
TJ = -55°C
100
80
MAX.
0.00334
0.00802
0.165
100
90
V
GS
80
70
60
50
40
30
20
, DRAIN CURRENT (AMPERES)
D
10
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1.40
1.30
1.20
NORMALIZED TO
V
= 10V @ ID = 22A
GS
VGS=10V
1.10
APT30M75 BFLL - SFLL
=15 &10V
8.5V
8V
7.5
7V
6.5V
6V
60
40
, DRAIN CURRENT (AMPERES)
D
20
0
TJ = +25°C
TJ = +125°C
0 2 4 6 8 10 12 14 0 20 40 60 80 100 120
V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R
45
, DRAIN-TO-SOURCE ON RESISTANCE I
DS(ON)
1.00
0.90
0.80
1.15
VGS=20V
vs DRAIN CURRENT
DS(ON)
40
35
1.10
30
25
20
1.05
1.00
15
10
, DRAIN CURRENT (AMPERES) I
D
5
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
T
C
2.5
ID = 22A
VGS = 10V
2.0
, DRAIN-TO-SOURCE BREAKDOWN R
0.95
DSS
0.90
1.2
1.1
1.5
1.0
0.9
1.0
0.8
(NORMALIZED)
0.5
, DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS(ON)
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, R
vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
DS(ON)
(NORMALIZED) VOLTAGE (NORMALIZED)
, THRESHOLD VOLTAGE BV
0.7
GS(TH)
V
0.6
050-7164 Rev A 1-2003
176
100
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT30M75 BFLL - SFLL
C
iss
100µS
1,000
C
oss
10
1mS
, DRAIN CURRENT (AMPERES)
D
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1 10 100 300 0 10 20 30 40 50
10mS
100
C
rss
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
ID = 44A
200
100
12
VDS=60V
VDS=150V
8
VDS=240V
T
=+150°C
J
T
=+25°C
J
10
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
, REVERSE DRAIN CURRENT (AMPERES) C , CAPACITANCE (pF)
DR
1
I
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
Drain
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
21.46 (.845)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-7164 Rev A 1-2003
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
Drain
(Heat Sink)
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
D3PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
{3 Plcs}
1.22 (.048)
1.32 (.052)
Dimensions in Millimeters (Inches)
15.95 (.628)
16.05(.632)
Revised
4/18/95
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
13.41 (.528)
13.51(.532)
Revised
8/29/97
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
11.51 (.453)
11.61 (.457)
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