ADVANCED POWER TECHNOLOGY APT30M75BFLL Service Manual

APT30M75BFLL

APT30M75SFLL

300V 44A 0.075

BFLL

ΩΩ

Ω

ΩΩ

POWER MOS 7 R FREDFET

®

Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

is a new generation of low loss, high voltage, N-Channel

®

®

combines lower conduction and switching losses

by significantly lowering R

DS(ON)

TO-247

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

3

PAK Package

APT30M75

300

44
176
±30
±40
329

2.63

-55 to 150
300

44
30

1300

D3PAK

SFLL

D

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

> I

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

x R

D(on)

2

(VGS = 10V, 22A)

= 300V, VGS = 0V)

DS

= 240V, VGS = 0V, TC = 125°C)

DS

Max, VGS = 10V)

DS(on)

= 0V)

DS

MIN TYP MAX

300

44

35

0.075
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7164 Rev A 1-2003

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

V

GS

V

DD

ID = 44A @ 25°C

V

GS

V

DD

I

= 44A @ 25°C

D

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 25V

= 10V

= 200V

= 15V

= 200V

= 0.6Ω

APT30M75 BFLL - SFLL

MIN TYP MAX

3018

771

43
57
21
23
13

3

20

2

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -44A, di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -44A, di/dt = 100A/µs)
Peak Recovery Current

(IS = -44A, di/dt = 100A/µs)

(VGS = 0V, IS = -44A)

5

T

= 25°C 200

j

T

= 125°C 400

j

T

= 25°C 1.1

j

T

= 125°C 2.7

j

T

= 25°C 10

j

T

= 125°C 15.1

j

THERMAL CHARACTERISTICS

Symbol

R
R

1 Repetitive Rating: Pulse width limited by maximum junction

temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

4 Starting T

dv

5

/

dt

device itself. I

+25°C, L = 1.34mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -I

S

44A

D

MIN TYP MAX

MIN TYP MAX

25Ω, Peak IL = 44A

G

=

di

/

≤ 700A/µs V

dt

R

≤ V

176

0.38

DSS

44

1.3
8

40

T

Amps

Amps

≤ 150°C

J

UNIT

Volts

V/ns

ns

µC

UNIT

°C/W

050-7164 Rev A 1-2003

0.40

0.35

0.30

0.25

0.20

0.15

, THERMAL IMPEDANCE (°C/W)

0.10

JC

θ

Z

0.05

0

-5

10

0.9

0.7

0.5

0.3

0.1

0.05

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

-3

10

-2

10

-1

10

1.0