ADVANCED POWER TECHNOLOGY APT15GT90B Service Manual
查询APT15GP90B供应商
APT15GP90BTYPICAL PERFORMANCE CURVES
APT15GP90B
900V
POWER MOS 7® IGBT
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss • 100 kHz operation @ 600V, 9A
• Low Gate Charge • 50 kHz operation @ 600V, 17A
• Ultrafast Tail Current shutoff • SSOA Rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
Parameter
G
C
E
APT15GP90B
G
UNIT
C
E
V
CES
V
V
GEM
I
C1
I
C2
I
CM
SSOA
P
TJ,T
T
GE
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (VGE = ±20V)
GE
CES
CES
= 25°C
= 0V, IC = 250µA)
GE
= 15V, IC = 15A, Tj = 25°C)
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
900
±20
Volts
±30
43
21
Amps
60
60A @ 900V
291
-55 to 150
Watts
°C
300
MIN TYP MAX
UNIT
900
3 4.5 6
Volts
3.2 3.9
2.7
2
2
250
2500
±100
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7470 Rev C 8-2004
DYNAMIC CHARACTERISTICS
1
APT15GP90B
Symbol
C
C
oes
C
res
V
GEP
Q
Q
Q
SSOA
Characteristic
Input Capacitance
ies
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector ("Miller ") Charge
gc
Switching Safe Operating Area
3
TJ = 150°C, R
15V, L = 100µH,V
t
d(on)
t
d(off)
E
E
E
t
d(on)
t
d(off)
E
E
E
t
t
on1
on2
t
t
on1
on2
Turn-on Delay Time
Current Rise Time
r
Turn-off Delay Time
Current Fall Time
f
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
off
Turn-on Delay Time
Current Rise Time
r
Turn-off Delay Time
Current Fall Time
f
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
off
Inductive Switching (25°C)
4
5
6
Inductive Switching (125°C)
4 4
55
66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJC
W
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
T
Test Conditions
Capacitance
= 0V, V
V
GE
CE
f = 1 MHz
Gate Charge
= 15V
V
GE
V
= 450V
CE
I
= 15A
C
= 5Ω, V
G
V
= 600V
CC
V
= 15V
GE
I
= 15A
C
R
= 5Ω
G
T
= +25°C
J
V
= 600V
CC
V
= 15V
GE
I
= 15A
C
R
= 5Ω
G
T
= +125°C
J
= 25V
= 900V
CE
GE
MIN TYP MAX
1100
=
60
TBD
TBD
MIN TYP MAX
120
32
7.5
60
10
27
9
14
33
55
430
200
9
14
70
100
790
500
.50
N/A
5.90
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. (See Figure 24.)
5E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. (See Figures 21, 22.)
6E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7470 Rev C 8-2004
includes both IGBT and FRED leakages
ces
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