ADVANCED POWER TECHNOLOGY APT15GT60KR Service Manual

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APT15GT60KR
600V 31A
Thunderbolt IGBT
TO-220
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
G
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V V
I I
I
CM1
I
CM2
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Emitter-Collector Voltage
EC
Gate-Emitter Voltage
GE
Continuous Collector Current @ T
C1
Continuous Collector Current @ T
C2
Pulsed Collector Current Pulsed Collector Current Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20K)
GE
= 25°C
C
= 110°C
C
1
@ TC = 25°C
1
@ TC = 110°C
2
C
E
G
APT15GT60KR
600 600
15
±20
31 15 60 30 24
135
-55 to 150 300
C
E
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
RBV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (V
(ON)
Collector-Emitter On Voltage (V Collector Cut-off Current (V Collector Cut-off Current (V Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= VGE, IC = 400µA, Tj = 25°C)
CE
= 15V, IC = IC2, Tj = 25°C)
GE
= 15V, IC = IC2, Tj = 150°C)
GE
= V
CE
CES
= V
CE
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.5mA, Tj = -55°C)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 150°C)
= ±20V, V
CE
= 0V)
600
-15 345
1.6 2.0 2.5
2.8 40
1000 ±100
UNIT
Volts
µA
nA
052-6202 Rev B
DYNAMIC CHARACTERISTICS APT15GT60KR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
PRELIMINARY
Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Test Conditions
Capacitance
V
= 0V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
= 15V
V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
V
= 15V
GE
V
= 0.80V
CC
I
CES
= I
C
C2
RG = 10
Inductive Switching (150
V
(Peak) = 0.66V
CLAMP
V
GE
I
C
R
G
T
= +150°C
J
= 15V
= I
C2
= 10
CES
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
CE
V
= 15V
GE
I
= I
C
R
= 10
G
T
= +25°C
J
= 20V, I
C2
CES
= I
C
C2
MIN TYP MAX
°C)
°C)
3
825
90 52
73 33
6
9 28 85
110
13
7
155
45
.15
40
0.55 13
7
130
25 24
11
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol
R R
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6202 Rev B
Characteristic
Junction to Case
ΘJC
Junction to Ambient
ΘJA
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX
0.93 40
10
UNIT
°C/W
lb•in
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