ADVANCED POWER TECHNOLOGY APT15GT60BRD Service Manual

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Thunderbolt IGBT™ & FRED

APT15GT60BRD

600V 30A

The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

TO-247

Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers

superior ruggedness and ultrafast switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 150KHz

• Low Tail Current • Ultra Low Leakage Current

• Avalanche Rated • RBSOA and SCSOA Rated

• Ultrafast Soft Recovery Antiparallel Diode

G

C

E

C

G

E

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

GE

I

C1

I

C2

I

CM1

I

CM2

E

AS

P

D

TJ,T

STG

T

L

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

= 20KΩ)

GE

= 25°C

C

= 110°C

C

1

@ TC = 25°C

1

@ TC = 110°C

2

APT15GT60BRD

600
600
±20

30
15
60
30
24

125

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (V

(ON)

Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

PRELIMINARY

= 0V, IC = 0.5mA, Tj = -55°C)

GE

= VGE, IC = 700µA, Tj = 25°C)

CE

= 15V, IC = IC2, Tj = 25°C)

GE

= 15V, IC = IC2, Tj = 150°C)

GE

= V

CE

= V

CE

APT Website - http://www.advancedpower.com

, VGE = 0V, Tj = 25°C)

CES

, VGE = 0V, Tj = 150°C)

CES

= ±25V, V

GE

CE

= 0V)

MIN TYP MAX

600

345

1.6 2.0 2.5

2.8
40

200

±100

UNIT

Volts

µA

nA

052-6250 Rev -

DYNAMIC CHARACTERISTICS (IGBT) APT15GT60BRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy

4

Turn-off Switching Energy
Total Switching Losses

4

Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

4

Forward Transconductance

Test Conditions

Capacitance

V

= 0V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.66V

CC

I

C

= 0.8I

CES

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.66V

CC

I

C

= 0.8I

CES

C2

RG = 5Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= 0.8I

C

R

= 5Ω

G

T

= +150°C

J

Inductive Switching (25

V

(Peak) = 0.66V

CLAMP

V

= 15V

GE

I

= 0.8I

C

R

= 5Ω

G

T

= +25°C

J

V

= 20V, I

CE

C

C2

C2

= I

CES

°C)

CES

C2

MIN TYP MAX

825

90
52

53
37

7

6
18
48
78
13
34
84
55

0.29

0.29

0.58
13
35
73
34

0.45

3

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

IC = IC2, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

4

Switching losses include the FRED and IGBT.

052-6250 Rev -

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

1.0

2.0
40

0.22

6.1
10

1.1

UNIT

°C/W

oz

gm
lb•in
N•m

APT15GT60BRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

V

RRM

V

RWM

IF(AV)

(RMS)

I

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (T

= 90°C, Duty Cycle = 0.5)

C

= 45°C, 8.3ms)

J

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

I

RM

L

Characteristic / Test Conditions

Maximum Forward Voltage I

F

Maximum Reverse Leakage Current VR = VR Rated

Maximum Reverse Leakage Current
Series Inductance (Lead to Lead 5mm from Base)

S

I

F

F

I

F

VR = VR Rated, TJ = 125°C

= 15A
= 30A
= 15A, TJ = 150°C

APT15GT60BRD

600

15
25

110

MIN TYP MAX

1.8

1.6

1.6
150
500

10

UNIT

Volts

Amps

UNIT

Volts

µA

nH

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I
Reverse Recovery Time T

= 15A, diF/dt = -100A/µs, VR = 350V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 15A, diF/dt = 100A/µs, VR = 350V TJ = 100°C

I

F

Reverse Recovery Current TJ = 25°C

= 15A, diF/dt = -100A/µs, VR = 350V TJ = 100°C

I

F

Recovery Charge T
IF = 15A, diF/dt = -100A/µs, VR = 350V TJ = 100°C
Forward Recovery Voltage T

= 15A, diF/dt = 100A/µs, VR = 350V TJ = 100°C

I

F

Rate of Fall of Recovery Current TJ = 25°C

= 15A, diF/dt = -100A/µs, VR = 350V (See Figure 10) TJ = 100°C

I

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

= 25°C

J

MIN TYP MAX

40 50
40

80
170
170

2.5 5
36

50

120

2.2

2.2

200
100

UNIT

ns

Amps

nC

Volts

A/µs

052-6250 Rev -

APT15GT60BRD

60

50

1200

1000

TJ=100°C

VR=350V

40

30

20

, FORWARD CURRENT

F

10

0

0 1 2 3 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

TJ = 150°C
TJ = 100°C

TJ = 25°C
TJ = -55°C

800

600

400

200

, REVERSE RECOVERY CHARGE

rr

0

30A

15A

7.5A

Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate

2.0

1.6

1.2

t

I

RRM

rr

0.8

, DYNAMIC PARAMETERS Q

f

0.4

Q

rr

t

rr

Q

rr

0.0

, REVERSE RECOVERY CURRENT I

RRM

40

TJ=100°C
VR=350V

30A

30

20

15A

7.5A

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature

100

80

30A

15A

7.5A

500

400

TJ=100°C

VR=350V

IF=15A

25

20

, REVERSE RECOVERY TIME I

rr

Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate

(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)

, THERMAL IMPEDANCE t

ΘJC

Z

Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

052-6250 Rev -

60

TJ=100°C
VR=350V

PRELIMINARY

40

300

200

V

fr

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

20

0

0 200 400 600 800 1000 0 200 400 600 800 1000

/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

di

F

100

, FORWARD RECOVERY TIME K

fr

t

t

fr

0

2.0

1.0

0.5

D=0.5

0.2

0.1

0.1

0.05

0.01

0.005

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

V

RECTANGULAR PULSE DURATION (SECONDS)

, REVERSE VOLTAGE (VOLTS)

R

-2

10

-1

10

NOTE:

DM

t

1

P

t

2

DUTY FACTOR D=t

=+

PEAK T P x Z T

DM JC

1.0 10

/

t

12

15

10

(VOLTS)

5

, FORWARD RECOVERY VOLTAGE

fr

V

0

CJ

30µH

APT15GT60BRD

V

r

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3
4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line
Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{ diM/dt}

.

RRM

PEARSON 411

CURRENT

TRANSFORMER

3

2

rr.

4

6

5

0.5 I

RRM

0.75 I

RRM

Q

rr

= 1/

t

I

(

rr

2

.

RRM

)

052-6250 Rev -

Collector

(Cathode)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

TO-247 Package Outline

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Collector

(Cathode)
Emitter

(Anode)