ADVANCED POWER TECHNOLOGY APT15GT60BRD Service Manual

查询APT15GT60BRD供应商
Thunderbolt IGBT™ & FRED
APT15GT60BRD
600V 30A
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
TO-247
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
G
C
E
C
G
E
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
TJ,T
STG
T
L
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Gate-Emitter Voltage Continuous Collector Current @ T Continuous Collector Current @ T Pulsed Collector Current Pulsed Collector Current Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
= 20K)
GE
= 25°C
C
= 110°C
C
1
@ TC = 25°C
1
@ TC = 110°C
2
APT15GT60BRD
600 600 ±20
30 15 60 30 24
125
-55 to 150 300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (V
(ON)
Collector-Emitter On Voltage (V Collector Cut-off Current (V Collector Cut-off Current (V Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
PRELIMINARY
= 0V, IC = 0.5mA, Tj = -55°C)
GE
= VGE, IC = 700µA, Tj = 25°C)
CE
= 15V, IC = IC2, Tj = 25°C)
GE
= 15V, IC = IC2, Tj = 150°C)
GE
= V
CE
= V
CE
APT Website - http://www.advancedpower.com
, VGE = 0V, Tj = 25°C)
CES
, VGE = 0V, Tj = 150°C)
CES
= ±25V, V
GE
CE
= 0V)
600
345
1.6 2.0 2.5
2.8 40
200
±100
UNIT
Volts
µA
nA
052-6250 Rev -
DYNAMIC CHARACTERISTICS (IGBT) APT15GT60BRD
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy
4
Turn-off Switching Energy Total Switching Losses
4
Turn-on Delay Time Rise Time
PRELIMINARY
Turn-off Delay Time Fall Time Total Switching Losses
4
Forward Transconductance
Test Conditions
Capacitance
V
= 0V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.66V
CC
I
C
= 0.8I
CES
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.66V
CC
I
C
= 0.8I
CES
C2
RG = 5
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= 0.8I
C
R
= 5
G
T
= +150°C
J
Inductive Switching (25
V
(Peak) = 0.66V
CLAMP
V
= 15V
GE
I
= 0.8I
C
R
= 5
G
T
= +25°C
J
V
= 20V, I
CE
C
C2
C2
= I
CES
°C)
CES
C2
MIN TYP MAX
825
90 52
53 37
7
6 18 48 78 13 34 84 55
0.29
0.29
0.58 13 35 73 34
0.45
3
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
052-6250 Rev -
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient
Package Weight
T
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX
1.0
2.0 40
0.22
6.1 10
1.1
UNIT
°C/W
oz
gm lb•in N•m
Loading...
+ 3 hidden pages