ADVANCED POWER TECHNOLOGY APT15GP60BDF1 Service Manual
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APT15GP60BDF1
600V
POWER MOS 7® IGBT
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss •100 kHz operation @ 400V, 19A
• Low Gate Charge •200 kHz operation @ 400V, 12A
• Ultrafast Tail Current shutoff •SSOA rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
Parameter
G
C
E
APT15GP60BDF1
G
UNIT
C
E
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
TJ,T
T
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
V
GE(TH)
V
CE(ON)
I
CES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
= 15V, IC = 15A, Tj = 25°C)
GE
= 25°C
GE
= 0V, IC = 500µA)
600
±20
Volts
±30
56
27
Amps
65
65A @ 600V
250
-55 to 150
Watts
°C
300
MIN TYP MAX
UNIT
600
3 4.5 6
Volts
2.2 2.7
2.1
2
2
500
3000
µA
I
GES
Gate-Emitter Leakage Current (VGE = ±20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
±100
nA
050-7428 Rev B 4-2003
DYNAMIC CHARACTERISTICS
APT15GP60BDF1
1
Symbol
C
C
oes
C
res
V
GEP
Q
Q
Q
SSOA
Characteristic
Input Capacitance
ies
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector ("Miller ") Charge
gc
Switching Safe Operating Area
3
TJ = 150°C, R
15V, L = 100µH,V
t
d(on)
t
d(off)
E
E
E
t
d(on)
t
d(off)
E
E
E
t
t
on1
on2
t
t
on1
on2
Turn-on Delay Time
Current Rise Time
r
Turn-off Delay Time
Current Fall Time
f
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
off
Turn-on Delay Time
Current Rise Time
r
Turn-off Delay Time
Current Fall Time
f
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
off
Inductive Switching (25°C)
4
5
6
Inductive Switching (125°C)
4 4
55
66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJC
W
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
T
Test Conditions
Capacitance
= 0V, V
V
GE
CE
f = 1 MHz
Gate Charge
= 15V
V
GE
V
= 300V
CE
I
= 15A
C
= 5Ω, V
G
V
= 400V
CC
V
= 15V
GE
I
= 15A
C
R
= 5Ω
G
T
= +25°C
J
V
= 400V
CC
V
= 15V
GE
I
= 15A
C
R
= 5Ω
G
T
= +125°C
J
= 25V
= 600V
CE
GE
MIN TYP MAX
1685
=
65
MIN TYP MAX
210
15
7.5
55
12
15
8
12
29
58
130
152
121
8
12
69
88
130
267
268
.50
1.31
5.90
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. (See Figure 24.)
5E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. A Combi device is used for the clamping diode as shown in the E
6E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7428 Rev B 4-2003
includes both IGBT and FRED leakages
ces
on2
test circuit. (See Figures 21, 22.)
TYPICAL PERFORMANCE CURVES
30
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
30
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
APT15GP60BDF1
20
15
TC=125°C
TC=25°C
TJ = -55°C
TC=-55°C
= 15V) FIGURE 2, Output Characteristics (V
GE
10
, COLLECTOR CURRENT (A)
C
5
0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
20
15
10
, COLLECTOR CURRENT (A)
C
5
TC=25°C
TC=125°C
0
16
IC = 15A
TJ = 25°C
14
12
10
V
CE
V
CE
= 300V
= 120V
8
40
6
TJ = 25°C
, COLLECTOR CURRENT (A) I
20
C
0
TJ = 125°C
0 2 4 6 8 10 12 0 10 20 30 40 50 60
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
4
, GATE-TO-EMITTER VOLTAGE (V) I
2
GE
0
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
3.5
2.5
1.5
TJ = 25°C.
250µs PULSE TEST
3
IC = 7.5A
<0.5 % DUTY CYCLE
IC =30A
2
IC = 15A
3.5
3
IC =30A
2.5
IC = 15A
2
1.5
V
CE
IC = 7.5A
TC=-55°C
= 10V)
GE
= 480V
1
0.5
, COLLECTOR-TO-EMITTER VOLTAGE (V) I
CE
0
6 8 10 12 14 16 -50 -25 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
0.5
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
CE
1
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.2
1.15
1.10
1.05
1.0
0.95
0.9
VOLTAGE (NORMALIZED)
0.85
, COLLECTOR-TO-EMITTER BREAKDOWN V
CES
0.8
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
BV
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
80
70
60
50
40
30
20
DC COLLECTOR CURRENT(A) V
C,
I
10
0
050-7428 Rev B 4-2003
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