The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
FIGURE 25. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
-3
10
RECTANGULAR PULSE DURATION (seconds)
-2
10
-1
10
1.0
050-7428 Rev B 4-2003
100
80
60
TJ = 175°C
TJ = 100°C
40
, FORWARD CURRENT
F
20
0
Figure 26, Forward Voltage vs. Forward Current Figure 27, Reverse Recovery Charge vs. Current Rate of Decrease
16
14
TJ = 150°C
TJ = 25°C
01234502004006008001000
V
, ANODE-TO-CATHODE VOLTAGE (V) diF/dt, CURRENT RATE OF DECREASE(A/ µs)
F
TJ=100°C
V
R
=400V
30A
500
TJ=100°C
450
VR=400V
400
30A
350
300
250
200
150
100
, REVERSE RECOVERY CHARGE
rr
50
0
1.6
1.4
7.5A
Q
15A
rr
APT15GP60BDF1
12
10
15A
8
6
7.5A
4
, REVERSE RECOVERY CURRENTI
RRM
Figure 28, Reverse Recovery Current vs. Current Rate of DecreaseFigure 29, Dynamic Parameters vs. Junction Temperature
2
0
020040060080010000255075100125150
di
/dt, CURRENT RATE OF DECREASE (A/µs) TJ, JUNCTION TEMPERATURE (°C)
F
100
TJ=100°C
VR=350V
80
30A
60
15A
7.5A
40
1.2
I
RRM
1.0
t
rr
0.8
0.6
0.4
, DYNAMIC PARAMETERSQ
f
0.2
0.0
30
25
20
15
(ns)(NORMALIZED)(nC)
10
, REVERSE RECOVERY TIMEI
Figure 30, Reverse Recovery Time vs. Current Rate of DecreaseFigure 31, Forward Recovery Voltage/Time vs. Current Rate of Decrease
20
rr
0
0200400600800100002004006008001000
di
/dt, CURRENT RATE OF DECREASEs (A/µs) diF/dt, CURRENT RATE OF DECREASE (A/ µs)
F
, FORWARD RECOVERY TIMEK
fr
250
30
5
0
TJ=100°C
VR=400V
IF=15A
t
rr
Q
rr
120
V
fr
100
80
60
t
fr
40
20
0
(V)
, FORWARD RECOVERY VOLTAGE
fr
V
200
25
20
150
(A)t
(pF)(ns)(A)(A)
100
, JUNCTION CAPACITANCEt
C
VR, REVERSE VOLTAGE (V) Case Temperature (°C)
50
J
0
.3110100 200255075100125150
I
F(AV)
15
10
5
0
Figure 32, Junction Capacitance vs. Reverse Voltage Figure 33, Maximum Average Forward Current vs.
CaseTemperature
050-7428 Rev B 4-2003
30µH
APT15GP60BDF1
V
r
D.U.T.
t
Q
/
rr
rr
Waveform
+15v
diF/dt Adjust
0v
-15v
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
I
1
- Forward Conduction Current
F
di
2
/dt - Current Rate of Decrease, Rate of Diode
F
Current Change Through Zero Crossing
From Positive to Negative.
3
I
- Maximum Reverse Recovery Current.
RRM
4
trr - Reverse
R
ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I
5
Qrr - Area Under the Curve Defined by I
6
/dt - Maximum Rate of Current Increase During the Trailing Portion of t
di
M
Junction
temp. ( ”C)
and 0.25 I
RRM
RC MODEL
0.698
passes through zero.
RRM
and trr.
RRM
0.00173F
Zero
PEARSON 2878
CURRENT
TRANSFORMER
1
4
5
3
0.25 I
Slope = diM/
6
RRM
dt
2
rr.
Power
(Watts)
Case temperature
0.438
0.165
0.0395F
0.670F
TRANSIENT THERMAL IMPEDANCE MODEL
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
Collector
(Cathode)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
(Cathode)
Emitter
(Anode)
050-7428 Rev B 4-2003
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.