ADVANCED POWER TECHNOLOGY APT12067JFLL Service Manual
查询APT12067JFLL供应商
APT12067JFLL
1200V 17A 0.670
POWER MOS 7 R FREDFET
®
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering R
and Qg. Power MOS 7
along with exceptionally fast switching speeds inherent with APT's
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
DS(ON)
G
ISOTOP
S
D
"UL Recognized"
®
ΩΩ
Ω
ΩΩ
S
SOT-227
patented metal gate structure.
• Lower Input Capacitance •Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg •Popular SOT-227 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
1
4
APT12067JFLL
1200
17
68
±30
±40
463
3.70
-55 to 150
300
17
50
2500
G
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
D
S
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
2
(VGS = 10V, ID = 8.5A)
= 1200V, VGS = 0V)
DS
= 0V)
DS
MIN TYP MAX
1200
35
0.670
250
1000
±100
UNIT
Volts
Ohms
µA
nA
Volts
050-7089 Rev B 2-2004
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
Symbol
C
C
oss
C
Q
Q
Q
t
d(on)
t
t
d(off)
t
E
E
E
E
Characteristic
Input Capacitance
iss
Output Capacitance
Reverse Transfer Capacitance
rss
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain ("Miller ") Charge
gd
Turn-on Delay Time
Rise Time
r
Turn-off Delay Time
Fall Time
f
Turn-on Switching Energy
on
Turn-off Switching Energy
off
Turn-on Switching Energy
on
Turn-off Switching Energy
off
Test Conditions
V
= 0V
GS
= 25V
V
DS
f = 1 MHz
3
6
6
INDUCTIVE SWITCHING @ 25°C
INDUCTIVE SWITCHING @ 125°C
V
= 10V
GS
= 600V
V
DD
= 18A @ 25°C
I
D
RESISTIVE SWITCHING
= 15V
V
GS
= 600V
V
DD
= 18A @ 25°C
I
D
= 0.6Ω
R
G
V
= 800V, V
DD
= 18A, RG = 5Ω
I
D
V
= 800V, V
DD
= 18A, RG = 5Ω
I
D
GS
GS
= 15V
= 15V
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
dv
t
Q
I
RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage
SD
/
Peak Diode Recovery dv/
dt
(Body Diode)
2
dt
Reverse Recovery Time
rr
= -ID 18A, di/dt = 100A/µs)
(I
S
Reverse Recovery Charge
rr
(IS = -ID 18A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID 18A, di/dt = 100A/µs)
(VGS = 0V, IS = -ID 18A)
5
T
= 25°C 300
j
T
= 125°C 600
j
T
= 25°C 2.0
j
T
= 125°C 6.0
j
T
= 25°C 13
j
T
= 125°C 21
j
THERMAL CHARACTERISTICS
Symbol
R
R
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
0.30
4 Starting T
dv
5
/
dt
device itself. I
6 Eon includes diode reverse recovery. See figures 18, 20.
+25°C, L = 17.30mH, R
j
=
numbers reflect the limitations of the test circuit rather than the
≤ -I
S
17A
D
MIN TYP MAX
4420
660
115
150
20
95
22
19
22
19
705
302
1239
402
MIN TYP MAX
MIN TYP MAX
25Ω, Peak IL = 17A
G
=
di
/
≤ 700A/µs V
dt
R
APT12067JFLL
17
68
1.3
18
0.27
40
≤ 1200 T
≤ 150°C
J
UNIT
pF
nC
ns
J
µ
UNIT
Amps
Volts
V/ns
ns
µC
Amps
UNIT
°C/W
050-7089 Rev B 2-2004
0.25
0.20
0.15
0.10
, THERMAL IMPEDANCE (°C/W)
JC
θ
0.05
Z
0
0.9
0.7
0.5
0.3
0.1
0.05
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
SINGLE PULSE
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
-1
10
1.0 10
Loading...