ADVANCED POWER TECHNOLOGY APT12067JFLL Service Manual

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APT12067JFLL

1200V 17A 0.670

POWER MOS 7 R FREDFET

®

Power MOS 7 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering R and Qg. Power MOS 7 along with exceptionally fast switching speeds inherent with APT's

is a new generation of low loss, high voltage, N-Channel

®

combines lower conduction and switching losses

DS(ON)

G

ISOTOP

S

D

"UL Recognized"

®

ΩΩ

Ω

ΩΩ

S

SOT-227

patented metal gate structure.

• Lower Input Capacitance •Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg •Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT12067JFLL

1200

17

68 ±30 ±40 463

3.70

-55 to 150 300

17 50

2500

G

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

D

S

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance Zero Gate Voltage Drain Current (V Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, V Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

2

(VGS = 10V, ID = 8.5A)

= 1200V, VGS = 0V)

DS

= 0V)

DS

MIN TYP MAX

1200

35

0.670 250

1000 ±100

UNIT

Volts

Ohms

µA

nA

Volts

050-7089 Rev B 2-2004

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

oss

C

Q Q Q

t

d(on)

t

d(off)

t E E E E

Characteristic

Input Capacitance

iss

Output Capacitance Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller ") Charge

gd

Turn-on Delay Time Rise Time

r

Turn-off Delay Time Fall Time

f

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

3

6

INDUCTIVE SWITCHING @ 25°C

INDUCTIVE SWITCHING @ 125°C

V

= 10V

GS

= 600V

V

DD

= 18A @ 25°C

I

D

RESISTIVE SWITCHING

= 15V

V

GS

= 600V

V

DD

= 18A @ 25°C

I

D

= 0.6Ω

R

G

V

= 800V, V

DD

= 18A, RG = 5Ω

I

D

V

= 800V, V

DD

= 18A, RG = 5Ω

I

D

GS

= 15V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage

SD

/

Peak Diode Recovery dv/

dt

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID 18A, di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID 18A, di/dt = 100A/µs) Peak Recovery Current

(IS = -ID 18A, di/dt = 100A/µs)

(VGS = 0V, IS = -ID 18A)

5

T

= 25°C 300

j

T

= 125°C 600

j

T

= 25°C 2.0

j

T

= 125°C 6.0

j

T

= 25°C 13

j

T

= 125°C 21

j

THERMAL CHARACTERISTICS

Symbol

R R

1 Repetitive Rating: Pulse width limited by maximum junction

temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

0.30

4 Starting T

dv

5

/

dt

device itself. I

6 Eon includes diode reverse recovery. See figures 18, 20.

+25°C, L = 17.30mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -I

S

17A

D

MIN TYP MAX

4420

660 115 150

20 95 22 19 22

19 705 302

1239

402

MIN TYP MAX

25Ω, Peak IL = 17A

G

=

di

/

≤ 700A/µs V

dt

R

APT12067JFLL

17 68

1.3 18

0.27 40

≤ 1200 T

≤ 150°C

J

UNIT

pF

nC

ns

J

µ

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

050-7089 Rev B 2-2004

0.25

0.20

0.15

0.10

, THERMAL IMPEDANCE (°C/W)

JC

θ

0.05

Z

0

0.9

0.7

0.5

0.3

0.1

0.05

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10

Typical Performance Curves

Junction temp. (°C)

RC MODEL

0.0497

0.0256F

40

V

=15,10 & 8V

35

GS

APT12067JFLL

7V

6.5V

30

25

6V

Power (watts)

Case temperature. (°C)

0.180

0.0393

0.419F

12.8F

20

15

10

, DRAIN CURRENT (AMPERES)

D

5 0

0 5 10 15 20 25 30

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x R

250µSEC. PULSE TEST

45

@ <0.5 % DUTY CYCLE

DS(ON)

40 35 30 25 20 15 10

, DRAIN CURRENT (AMPERES)

D

MAX.

TJ = +125°C

TJ = +25°C

TJ = -55°C

1.40

NORMALIZED TO

V

= 10V @ ID = 8.5A

GS

1.30

1.20 VGS=10V

1.10

1.00

, DRAIN-TO-SOURCE ON RESISTANCE I

0.90

VGS=20V

05

0

0 1 2 3 4 5 6 7 0 5 10152025303540

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R

18

DS(ON)

0.80

1.15

vs DRAIN CURRENT

DS(ON)

16 14 12 10

8 6 4

, DRAIN CURRENT (AMPERES) I

D

2 0

25 50 7 5 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

2.5

ID = 8.5A

VGS = 10V

2.0

1.10

1.05

1.00

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

0.90

DSS

0.85

1.2

1.1

5.5V

5V

4.5V

1.5

1.0

0.9

1.0

(NORMALIZED)

0.5

, DRAIN-TO-SOURCE ON RESISTANCE I

DS(ON)

0.0

R

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, R

vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

DS(ON)

(NORMALIZED) VOLTAGE (NORMALIZED)

0.8

, THRESHOLD VOLTAGE BV

GS(TH)

0.7

V

0.6

050-7089 Rev B 2-2004

68

OPERATION HERE

LIMITED BY R

20,000

(ON)

DS

100µS

10,000

5,000

APT12067JFLL

C

iss

10

500

C

oss

5

1,000

C

rss

, DRAIN CURRENT (AMPERES)

D

TC =+25°C TJ =+150°C SINGLE PULSE

1

1 10 100 1200 0 10 20 30 40 50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1mS

10mS

100

10

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

16

ID = 18A

200

100

12

T

=+150°C

VDS=240V

8

VDS=600V

VDS=960V

10

J

T

=+25°C

J

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 20 40 60 80 100 120 140 160 180200 0.3 0.5 0.7 0.9 1.1 1.3 1.5

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

1

FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

(ns)

d(off)

and t

d(on)

160

140

t

d(off)

120

VDD = 800V

100

RG = 5Ω TJ = 125°C

80

L = 100µH

60

40

20

0

0 10 20 30 0 5 1015202530

t

d(on)

ID (A) ID (A)

(ns)

f

and t

r

60

50

40

30

20

10

0

VDD = 800V RG = 5Ω TJ = 125°C L = 100µH

t

f

t

r

FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT

(µJ) t

off

and E

on

E

2000

VDD = 800V RG = 5Ω TJ = 125°C L = 100µH

1500

EON includes diode reverse recovery

1000

500

E

on

E

off

3000

VDD = 800V ID = 18A

2500

TJ = 125°C L = 100µH

EON includes

2000

diode reverse recovery

1500

E

on

1000

SWITCHING ENERGY (µJ) t

500

E

off

0

0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50

FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

050-7089 Rev B 2-2004

0

I

(A) RG, GATE RESISTANCE (Ohms)

D

APT12067JFLL

t

10%

d(on)

t

r

90%

5%

10%

Gate Voltage

Drain Current

5%

Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT60D120B

V

CC

I

CE

C

G

TJ125°C

90%

t

d(off)

90%

t

f

Gate Voltage

Drain Voltage

TJ125°C

10%

Drain Current

0

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

D.U.T.

Figure 20, Inductive Switching Test Circuit

r = 4.0 (.157) (2 places)

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165) (2 places)

12.2 (.480)

8.9 (.350)

9.6 (.378)

0.75 (.030)

0.85 (.033)

Hex Nut M4 (4 places)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

3.3 (.129)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

3.6 (.143)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

1.95 (.077)

2.14 (.084)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

Gate

050-7089 Rev B 2-2004

ADVANCED POWER TECHNOLOGY APT12067JFLL Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual