ADVANCED POWER TECHNOLOGY APT12057JFLL Service Manual
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APT12057JFLL
1200V 19A 0.570
POWER MOS 7 R FREDFET
®
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
is a new generation of low loss, high voltage, N-Channel
®
®
combines lower conduction and switching losses
by significantly lowering R
DS(ON)
G
ISOTO P
S
S
D
SOT-227
"UL Recognized"
®
ΩΩ
Ω
ΩΩ
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
= 25°C
C
1
4
APT12057JFLL
1200
19
76
±30
±40
520
4.17
-55 to 150
300
19
50
3000
G
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
D
S
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
2
(VGS = 10V, 9.5A)
= 960V, VGS = 0V, TC = 125°C)
DS
= 0V)
DS
MIN TYP MAX
1200
35
0.570
250
1000
±100
UNIT
Volts
Ohms
µA
nA
Volts
050-7085 Rev C 7-2004
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
050-7085 Rev C 7-2004
DYNAMIC CHARACTERISTICS
Symbol
C
C
oss
C
Q
Q
Q
t
d(on)
t
t
d(off)
t
E
E
E
E
Characteristic
Input Capacitance
iss
Output Capacitance
Reverse Transfer Capacitance
rss
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain ("Miller ") Charge
gd
Turn-on Delay Time
Rise Time
r
Turn-off Delay Time
Fall Time
f
Turn-on Switching Energy
on
Turn-off Switching Energy
off
Turn-on Switching Energy
on
Turn-off Switching Energy
off
Test Conditions
V
= 0V
GS
= 25V
V
DS
f
= 1 MHz
3
6
6
INDUCTIVE SWITCHING @ 25°C
INDUCTIVE SWITCHING @ 125°C
V
= 10V
GS
= 600V
V
DD
= 19A @ 25°C
I
D
RESISTIVE SWITCHING
V
= 15V
GS
= 600V
V
DD
= 19A @ 25°C
I
D
= 0.6Ω
R
G
V
= 800V, V
DD
= 19A, RG = 5Ω
I
D
V
= 800V V
DD
= 19A, RG = 5Ω
I
D
GS
GS
= 15V
= 15V
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
dv
t
Q
I
RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage
SD
/
Peak Diode Recovery dv/
dt
Reverse Recovery Time
rr
= -19A, di/dt = 100A/µs)
(I
S
(Body Diode)
2
dt
Reverse Recovery Charge
rr
(IS = -19A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -19A, di/dt = 100A/µs)
(VGS = 0V, IS = -19A)
5
T
= 25°C 320
j
T
= 125°C 650
j
T
= 25°C 2.0
j
T
= 125°C 7.0
j
T
= 25°C 13
j
T
= 125°C 22
j
THERMAL CHARACTERISTICS
Symbol
R
R
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
0.25
0.9
0.20
0.7
0.15
0.5
0.10
0.3
, THERMAL IMPEDANCE (°C/W)
0.05
θJC
Z
0
10
0.1
0.05
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
4 Starting T
dv
5
/
dt
device itself. I
6 Eon includes diode reverse recovery. See figures 18, 20.
SINGLE PULSE
-4
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
10
+25°C, L = 16.62mH, R
j
=
numbers reflect the limitations of the test circuit rather than the
≤ -19A
S
-2
10
MIN TYP MAX
5155
770
130
185
24
120
11
18
36
24
725
365
1200
450
MIN TYP MAX
MIN TYP MAX
25Ω, Peak IL = 19A
G
=
di
/
≤ 700A/µs V
dt
-1
10
APT12057JFLL
19
76
1.3
18
0.24
40
≤ 1200 T
R
1.0
≤ 150°C
J
UNIT
pF
nC
ns
µJ
UNIT
Amps
Volts
V/ns
ns
µC
Amps
UNIT
°C/W
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