ADVANCED POWER TECHNOLOGY APT12057JFLL Service Manual

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APT12057JFLL

1200V 19A 0.570

POWER MOS 7 R FREDFET

®

Power MOS 7 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 and Qg. Power MOS 7 along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

is a new generation of low loss, high voltage, N-Channel

®

combines lower conduction and switching losses

by significantly lowering R

DS(ON)

G

ISOTO P

S

D

SOT-227

"UL Recognized"

®

ΩΩ

Ω

ΩΩ

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg • Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

D

Pulsed Drain Current

Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient

Total Power Dissipation @ T

D

Linear Derating Factor

Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current

Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

APT12057JFLL

1200

19

76

±30

±40

520

4.17

-55 to 150

300

19

50

3000

G

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

D

S

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (VGS = ±30V, V

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 9.5A)

= 960V, VGS = 0V, TC = 125°C)

DS

= 0V)

DS

MIN TYP MAX

1200

35

0.570

250

1000

±100

UNIT

Volts

Ohms

µA

nA

Volts

050-7085 Rev C 7-2004

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

050-7085 Rev C 7-2004

DYNAMIC CHARACTERISTICS

Symbol

C

oss

C

Q

t

d(on)

t

d(off)

t

E

Characteristic

Input Capacitance

iss

Output Capacitance

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller ") Charge

gd

Turn-on Delay Time

Rise Time

r

Turn-off Delay Time

Fall Time

f

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Test Conditions

V

= 0V

GS

= 25V

V

DS

f

= 1 MHz

3

6

INDUCTIVE SWITCHING @ 25°C

INDUCTIVE SWITCHING @ 125°C

V

= 10V

GS

= 600V

V

DD

= 19A @ 25°C

I

D

RESISTIVE SWITCHING

V

= 15V

GS

= 600V

V

DD

= 19A @ 25°C

I

D

= 0.6Ω

R

G

V

= 800V, V

DD

= 19A, RG = 5Ω

I

D

V

= 800V V

DD

= 19A, RG = 5Ω

I

D

GS

= 15V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

Diode Forward Voltage

SD

/

Peak Diode Recovery dv/

dt

Reverse Recovery Time

rr

= -19A, di/dt = 100A/µs)

(I

S

(Body Diode)

2

dt

Reverse Recovery Charge

rr

(IS = -19A, di/dt = 100A/µs)

Peak Recovery Current (IS = -19A, di/dt = 100A/µs)

(VGS = 0V, IS = -19A)

5

T

= 25°C 320

j

T

= 125°C 650

j

T

= 25°C 2.0

j

T

= 125°C 7.0

j

T

= 25°C 13

j

T

= 125°C 22

j

THERMAL CHARACTERISTICS

Symbol

R

1 Repetitive Rating: Pulse width limited by maximum junction

temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

0.25

0.9

0.20

0.7

0.15

0.5

0.10

0.3

, THERMAL IMPEDANCE (°C/W)

0.05

θJC

Z

0

10

0.1

0.05

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

4 Starting T

dv

5

/

dt

device itself. I

6 Eon includes diode reverse recovery. See figures 18, 20.

SINGLE PULSE

-4

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

10

+25°C, L = 16.62mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -19A

S

-2

10

MIN TYP MAX

5155

770

130

185

24

120

11 18

36

24

725

365

1200

450

MIN TYP MAX

25Ω, Peak IL = 19A

G

=

di

/

≤ 700A/µs V

dt

-1

10

APT12057JFLL

19

76

1.3

18

0.24

40

≤ 1200 T

R

1.0

≤ 150°C

J

UNIT

pF

nC

ns

µJ

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

50

V

=15,10 & 8V

Junction temp. (°C)

Power

(watts)

RC MODEL

0.0528

0.0651

0.0203F

0.173F

45

40

35

30

25

20

GS

6.5V

6V

15

0.123

Case temperature. (°C)

0.490F

10

, DRAIN CURRENT (AMPERES)

D

5

0

0 5 10 15 20 25 30

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

70

@ <0.5 % DUTY CYCLE

1.40

1.30

NORMALIZED TO

V

= 10V @ ID = 9.5A

GS

60

50

1.20

APT12057JFLLTypical Performance Curves

7V

5.5V

5V

40

30

20

, DRAIN CURRENT (AMPERES)

D

10

0

TJ = +125°C

TJ = -55°C

TJ = +25°C

0 2 4 6 8 10 0 5 10152025303540

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

20

16

1.10

1.00

0.90

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.80

DS

1.15

1.10

VGS=10V

VGS=20V

1.05

12

1.00

8

0.95

4

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 9.5A

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.90

DSS

0.85

1.2

1.1

1.5

1.0

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(NORMALIZED) VOLTAGE (NORMALIZED)

0.8

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-7085 Rev C 7-2004

76

OPERATION HERE

LIMITED BY R

(ON)

DS

100µS

20,000

10,000

5,000

10

1,000

5

500

, DRAIN CURRENT (AMPERES)

TC =+25°C

D

1mS

TJ =+150°C SINGLE PULSE

1

1 10 100 1200 0 10 20 30 40 50

10mS

100

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

16

ID = 19A

200

100

12

8

VDS=100V

VDS=250V

VDS=400V

T

=+150°C

J

T

J

=+25°C

10

APT12057JFLL

C

iss

C

oss

C

rss

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

0

V

0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

160

t

140

d(off)

120

(ns)

d(off)

and t

d(on)

80

60

40

RG = 5Ω

TJ = 125°C

L = 100µH

VDD = 800V

100

20

t

0

10 20 30 40 50 10 20 30 40 50

d(on)

ID (A) ID (A)

(ns)

f

and t

r

70

60

50

40

30

20

10

0

VDD = 800V

RG = 5Ω

TJ = 125°C

L = 100µH

t

f

t

r

FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT

3500

VDD = 800V

RG = 5Ω

3000

TJ = 125°C

L = 100µH

2500

EON includes

diode reverse recovery.

2000

1500

E

on

3500

VDD = 800V

ID = 19A

3000

TJ = 125°C

L = 100µH

2500

EON includes

diode reverse recovery.

2000

1500

E

off

E

on

1000

SWITCHING ENERGY (µJ) t

500

0

10 20 30 40 50 0 5 10 15 20 25 30 35 40 45 50

FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

050-7085 Rev C 7-2004

1000

E

off

SWITCHING ENERGY (µJ) t

500

0

I

(A) RG, GATE RESISTANCE (Ohms)

D

APT12057JFLLTypical Performance Curves

Gate Voltage

10%

t

d(on)

t

r

90%

5%

10%

Drain Current

5%

Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT30DF120

V

DD

I

DS

D

TJ125°C

90%

T

125°C

t

d(off)

Gate Voltage

t

f

J

Drain Voltage

90%

10%

0

Drain Current

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

G

D.U.T.

Figure 20, Inductive Switching Test Circuit

31.5 (1.240)

31.7 (1.248)

r = 4.0 (.157) (2 places)

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165) (2 places)

9.6 (.378)

0.75 (.030)

0.85 (.033)

Hex Nut M4 (4 places)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

3.3 (.129)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

3.6 (.143)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

1.95 (.077)

2.14 (.084)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

Gate

050-7085 Rev C 7-2004

ADVANCED POWER TECHNOLOGY APT12057JFLL Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual