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APT12040L2LL
1200V 30A 0.400W
POWER MOS 7
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7
TM
combines lower conduction and switching losses
TM
by significantly lowering R
TM
TO-264
Max
DS(ON)
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance •Increased Power Dissipation
D
• Lower Miller Capacitance •Easier To Drive
• Lower Gate Charge, Qg • Popular TO-264
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
STATIC ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
1
1
(Repetitive and Non-Repetitive)
ADVANCE TECHNICAL
= 25°C
C
= 25°C
C
1
4
INFORMATION
MAX Package
APT12040L2LL
-55 to 150
1200
30
120
±30
±40
890
7.12
300
30
50
3200
G
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
1200
30
35
0.400
100
500
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-7122 Rev - 9-2001
DYNAMIC CHARACTERISTICS
APT12040L2LL
Symbol
C
C
C
Q
Q
Q
t
d(on)
t
d(off)
Characteristic
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain ("Miller") Charge
gd
Turn-on Delay Time
t
Rise Time
r
Turn-off Delay Time
t
Fall Time
f
Test Conditions
V
VDS = 25V
f = 1 MHz
3
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 0.6W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
dv
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
ADVANCE TECHNICAL
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
/
Peak Diode Recovery dv/
dt
(Body Diode)
dt
INFORMATION
, dlS/dt = 100A/µs)
D[Cont.]
= -I
S
5
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
8690
1200
908
306
37
182
21
14
67
24
MIN TYP MAX
30
120
1.3
1250
31.0
10
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
3
See MIL-STD-750 Method 3471
4
Starting T
5dv
/
dt
device itself. I
+25°C, L = 7.11mH, R
j
=
numbers reflect the limitations of the test circuit rather than the
£ -I
S
D[Cont.
di
]
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
Drain
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-7122 Rev - 9-2001
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
2-Plcs.
19.51 (.768)
20.50 (.807)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
MIN TYP MAX
0.14
40
25W, Peak IL = 30A
G
=
/
£ 700A/µs V
dt
£ V
R
DSS
T
UNIT
°C/W
£ 150°C
J