ADVANCED POWER TECHNOLOGY APT12040JVR Service Manual

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APT12040JVR

1200V 26A 0.400W

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

 Faster Switching  100% Avalanche Tested

 Lower Leakage  Popular SOT-227 Package

S

G

®

ISOTOP

G

D

®

S

SOT-227

"UL Recognized"

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT12040JVR

1200

26

104

±30

±40

700

5.6

-55 to 150

300

26

50

3600

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Chemin de Magret 33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (VGS = ±30V, V

Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1200

26

24

0.400

100

500

±100

UNIT

Volts

Amps

Ohms

µA

nA

Volts

050-5588 Rev C

DYNAMIC CHARACTERISTICS APT12040JVR

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

C

C

Q

Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller ") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

@ 25°C

= 15V

@ 25°C

= 0.6W

DSS

DSS

MIN TYP MAX

15000 18000

1240 1730

640 960

800 1200

64 96

400 600

20 40

18 36

90 135

20 40

MIN TYP MAX

26

104

1.3

1400

38

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5588 Rev C

THERMAL/ PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction

temperature.

, Peak IL = 26A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

qJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.2

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

0.0005
10

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 10.65mH, R

j

=

10

MIN TYP MAX

0.18

40

2500

13

25W

G

=

-1

1.0 10

UNIT

°C/W

Volts

lbin

APT12040JVR

50

VGS=6V, 7V, 10V & 15V

40

5V

50

40

VGS=6V, 7V, 10V & 15V

5V

30

20

30

20

4.5V

10

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 600 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

10

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

40

30

20

TJ = +125°C

10

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +25°C

02468 01530456075

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

30

1.20

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.15

1.10

1.05

VGS=10V

VGS=20V

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.95

DS

1.15

4.5V

4V

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

0.90

DSS

0.85

1.2

1.1

25

20

15

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5588 Rev C

200
100

50

OPERATION HERE

LIMITED BY R

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 500 1200 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

(ON)

DS

VDS=120V

VDS=240V

10µS

100µS

1mS

10mS

100mS

70,000
50,000

10,000

5,000

1,000

400

200

100

C

iss

C

oss

C

rss

50

T

=+150°C T

J

=+25°C

J

APT12040JVR

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 250 500 750 1000 1250 1500 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=600V

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)
Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

r = 4.0 (.157)

(2 places)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

14.9 (.587)

15.1 (.594)

3.3 (.129)

3.6 (.143)

* Source Drain

1.95 (.077)

2.14 (.084)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5588 Rev C

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

"UL Recognized" File No. E145592