ADVANCED POWER TECHNOLOGY APT1201R4BLL, APT1201R4SLL Service Manual

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APT1201R4BLL

APT1201R4SLL

1200V 9A 1.400W

POWER MOS 7

TM

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

along with exceptionally fast switching speeds inherent with APT's

BLL

D3PAK

TO-247

SLL

patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

3

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR
AS

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

PAK Package

G

APT1201R4

1200

9

36
±30
±40
300

2.4

-55 to 150
300

12
30

1210

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1200

9

35

1.40
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7108 Rev - 11-2001

DYNAMIC CHARACTERISTICS APT1201R4 BLL - SLL

Symbol

C

C

C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

GS

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

/

rr
dt

ADVANCE TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I
Peak Diode Recovery

(Body Diode)

dv

/

dt

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

5

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

= 10V

@ 25°C

@ 25°C

DSS

DSS

MIN TYP MAX

2300

320
241

81
10
48
14

9
44
23

MIN TY P MAX

9

36

1.3

500

7.0
10

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Drain

Characteristic

Junction to Case
Junction to Ambient

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 29.9mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

Drain

(Heat Sink)

0.46 (.018)

{3 Plcs}

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.22 (.048)

1.32 (.052)

MIN TYP MAX

25W, Peak IL = 9A

G

=

di

/

£ 700A/µs V

]

15.95 (.628)

16.05 (.632)

Revised

4/18/95

dt

13.79 (.543)

13.99 (.551)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC
{2 Plcs.}

Drain

Gate

D[Cont.

Dimensions in Millimeters (Inches)

1.04 (.041)

1.15 (.045)

1.27 (.050)

1.40 (.055)

Source

£ V

R

0.42
40

T

DSS

J

13.41 (.528)

13.51 (.532)

Revised
8/29/97

3.81 (.150)

4.06 (.160)
(Base of Lead)

Heat Sink (Drain)
and Leads
are Plated

UNIT

°C/W

£ 150°C

11.51 (.453)

11.61 (.457)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7108 Rev - 11-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058