ADVANCED POWER TECHNOLOGY APT11GF120KR Service Manual

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APT11GF120KR

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,

fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

1200V 22A

TO-220

G

C

E

C

• Avalanche Rated • RBSOA and SCSOA Rated

G

E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V
V

I

C1

I

C2

I

CM1

I

CM2

E

P

TJ,T

T

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Emitter-Collector Voltage

EC

Gate-Emitter Voltage

GE

Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Single Pulse Avalanche Energy

AS

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

= 20KW)

GE

= 25°C

C

= 110°C

C

1

@ TC = 25°C

1

@ TC = 110°C

2

APT11GF120KR

1200
1200

15

±20

22
11
44
22
10

125

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

RBV

VGE(TH)

V

CE

I

CES

I

GES

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Collector-Emitter Reverse Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGE, IC = 350µA, Tj = 25°C)

CE

= V

CE

CES

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 0.4mA)

GE

= 0V, IC = 50mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

1200

-15

4.5 5.5 6.5

2.5 3.0

3.1 3.7

0.4

2.0

±100

UNIT

Volts

mA

nA

052-6213 Rev B 12-2000

DYNAMIC CHARACTERISTICS APT11GF120KR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

= 25V

V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

= 0.8V

V

CC

CES

I

= I

C

C2

RG = 10W

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

R

T

J

= 15V

GE

I

= I

C

C2

= 10W

G

= +150°C

CES

Inductive Switching (25°C)

V

(Peak) = 0.66V

CLAMP

V

R

T

= 20V, I

V

CE

= 15V

GE

I

= I

C

= 10W

G

= +25°C

J

C2

CES

= I

C

C2

MIN TYP MAX

600 800

70 105
38 55
55
35

6
10
45
55

110

13
12

125

90

.45

1.00

1.45
13
12

110

90

1.0

4.7

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL CHARACTERISTICS

Symbol

R

QJC

R

QJA

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

IC = 15A, RGE = 25W, L = 300µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

052-6213 Rev B 12-2000

Characteristic

Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw

MIN TYP MAX

1.00
80

10

UNIT

°C/W

lb•in