ADVANCED POWER TECHNOLOGY APT11058JFLL Service Manual

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APT11058JFLL

1100V 18A 0.580

POWER MOS 7 R FREDFET

®

Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

is a new generation of low loss, high voltage, N-Channel

®

®

combines lower conduction and switching losses

by significantly lowering R

DS(ON)

G

ISOTO P

S

S

D

SOT-227

"UL Recognized"

®

ΩΩ

Ω

ΩΩ

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg • Popular SOT-227 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E

E

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

D

Pulsed Drain Current

Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient

Total Power Dissipation @ T

D

Linear Derating Factor

Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current

Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

APT11058JFLL

1100

18

72

±30

±40

463

3.70

-55 to 150

300

18

50

2500

G

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

D

S

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, V

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

2

(VGS = 10V, ID = 9A)

= 0V)

DS

MIN TYP MAX

1100

35

0.580

250

1000

±100

UNIT

Volts

Ohms

µA

nA

Volts

050-7183 Rev A 4-2004

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

C

C

Q

Q

Q

t

d(on)

t

d(off)

E

E

E

E

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller ") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Turn-on Switching Energy

on

Turn-off Switching Energy

off

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

3

6

6

INDUCTIVE SWITCHING @ 25°C

INDUCTIVE SWITCHING @ 125°C

V

= 10V

GS

= 550V

V

DD

= 18A @ 25°C

I

D

RESISTIVE SWITCHING

= 15V

V

GS

= 550V

V

DD

= 18A @ 25°C

I

D

= 0.6Ω

R

G

V

= 733V, V

DD

= 18A, RG = 5Ω

I

D

V

= 733V V

DD

= 18A, RG = 5Ω

I

D

GS

GS

= 15V

= 15V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -18A, di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -18A, di/dt = 100A/µs)

Peak Recovery Current

(IS = -18A, di/dt = 100A/µs)

(VGS = 0V, IS = -18A)

5

T

= 25°C 300

j

T

= 125°C 600

j

T

= 25°C 1.7

j

T

= 125°C 4.47

j

T

= 25°C 11.4

j

T

= 125°C 16.4

j

THERMAL CHARACTERISTICS

Symbol

R

R

1 Repetitive Rating: Pulse width limited by maximum junction

temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

4 Starting T

dv

5

/

dt

device itself. I

6 Eon includes diode reverse recovery. See figures 18, 20.

+25°C, L = 15.43mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -I

S

18A

D

MIN TYP MAX

4135

680

120

160

20

105

16

8

40

12

700

210

1450

270

MIN TYP MAX

MIN TYP MAX

25Ω, Peak IL = 18A

G

=

di

/

≤ 700A/µs V

dt

R

APT11058JFLL

18

Amps

72

1.3

18

Amps

0.27

40

≤ V

T

≤ 150°C

DSS

J

UNIT

pF

nC

ns

µ

J

UNIT

Volts

V/ns

ns

µC

UNIT

°C/W

050-7183 Rev A 4-2004

0.30

0.25

0.20

0.15

0.10

, THERMAL IMPEDANCE (°C/W)

JC

θ

0.05

Z

0

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.9

0.7

0.5

0.3

0.1

0.05

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

-1

1.0 10