ADVANCED POWER TECHNOLOGY APT10M30AVR Service Manual
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APT10M30AVR
100V 65A 0.030Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-3 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
1 5
= 25°C
C
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
1 5
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
(Repetitive and Non-Repetitive)
1
4
5
®
D
G
S
APT10M30AVR
100
UNIT
Volts
65
260
Amps
±30
±40
Volts
235
1.88
-55 to 150
Watts
W/°C
°C
300
65
Amps
30
1500
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2 5
(V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
= 0V, ID = 250µA)
GS
> I
DS
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
x R
DS(on)
, VGS = 0V)
DSS
DSS
DS
Max, VGS = 10V)
)
D[Cont.]
, VGS = 0V, TC = 125°C)
= 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
100
65
24
0.030
250
1000
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5830 Rev -
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT10M30AVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = 0.5 I
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 1.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
1 5
5
(Body Diode)
, dlS/dt = 100A/µs)
D[Cont.]
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
D[Cont.]
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
4300 5160
1600 2240
650 975
150 225
28 42
75 115
13 26
22 44
40 60
10 20
MIN TYP MAX
65
260
1.3
150
1.0
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5830 Rev -
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
1
Repetitive Rating: Pulse width limited by maximum T
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
0.6
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.001
-5
10
4
j
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
Starting T
5
The maximum current is limited by lead temperature.
-2
10
+25°C, L = 0.71mH, R
j
=
-1
10
MIN TYP MAX
0.53
30
25Ω, Peak IL = 65A
G
=
1.0 10
UNIT
°C/W
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