ADVANCED POWER TECHNOLOGY APT10M25BVR Service Manual

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APT10M25BVR

100V 75A 0.025Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-247 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1 5

= 25°C

C

5

Gate-Source Voltage Continuous
Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1 5

(Repetitive and Non-Repetitive)

1

4

APT10M25BVR

TO-247

G

100

75

300

±30
±40

300

2.4

-55 to 150
300

75
30

1500

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2 5

(V

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGS, ID = 1.0mA)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

DS

D(on)

2

(VGS = 10V, 0.5 I

= V

DS

= 0.8 V

DS

= ±30V, V

GS

x R

DS(on)

, VGS = 0V)

DSS

DSS

DS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C)
= 0V)

MIN TYP MAX

100

75

0.025
250

1000
±100

24

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5513 Rev A

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10M25BVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

VGS = 10V

V

= 0.5 V

DD

ID = 0.5 I

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1 5
2

(VGS = 0V, IS = -I

S

5

(Body Diode)

= -I

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 25V

D[Cont.]

= 15V

= 1.6Ω

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

4300 5160
1600 2240

650 975
150 225

28 42
75 115

13 26
22 44
40 60
10 20

MIN TYP MAX

75

300

1.3

150

1.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5513 Rev A

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum T

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

4

j

D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Starting Tj = +25°C, L = 0.53mH, RG = 25Ω, Peak IL = 75A

5

The maximum current is limited by lead temperature.

-2

10

-1

10

MIN TYP MAX

0.42
40

1.0 10

UNIT

°C/W

APT10M25BVR

150

125

100

VGS=10V & 15V

7V

6.5V

150

125

100

VGS=15V

10V

7V

6.5V

75

50

, DRAIN CURRENT (AMPERES)

25

D

0

01020304050 0 1 2 3 4 5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6V

5.5V

5V

4.5V
4V

75

50

, DRAIN CURRENT (AMPERES)

25

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

150

125

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

100

75

TJ = -55°C

TJ = +25°C

TJ = +125°C

1.2

1.1

1.0

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

50

0.9

, DRAIN CURRENT (AMPERES) I

25

D

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8 10 0 25 50 75 100 125 150

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

V

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

80

TJ = -55°C

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

VGS=20V

(ON) vs DRAIN CURRENT

DS

6V

5.5V

5V

4.5V
4V

60

1.10

1.05

40

1.00

20

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.00

ID = 0.5 ID [Cont.]

VGS = 10V

1.75

1.50

1.25

1.00

(NORMALIZED)

0.75

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

T

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5513 Rev A

400

OPERATION HERE

LIMITED BY RDS (ON)

100

50

10

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

100µS

1mS

10mS

100mS
DC

15,000
10,000

5,000

1,000

500

APT10M25BVR

C

oss

C

iss

C

iss

C

oss

C

rss

1

1 5 10 50 100 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=20V

VDS=50V

VDS=80V

100

200

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

T

=+150°C T

J

5

1

=+25°C

J

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

20.80 (.819)

21.46 (.845)

Drain

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5513 Rev A

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source