ADVANCED POWER TECHNOLOGY APT10M19SVR Service Manual

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APT10M19SVR

100V 75A 0.019Ω

POWER MOS V

®

D3PAK

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

3

• Lower Leakage • Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

1 5

= 25°C

C

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1 5

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

5

PAK Package

®

D

G

S

APT10M19SVR

100

UNIT

Volts

75

300

Amps

±30 ±40

Volts

370

2.96

-55 to 150

Watts

W/°C

°C

300

75

Amps

30

1500

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 579215 15 FAX: (33) 55647 97 61

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2 5

(V Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

DS

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

x R

DS(on)

, VGS = 0V)

DSS

DS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C) = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

100

75

24

0.019 250

1000 ±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5506 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10M19SVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = 0.5 I

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

1 5

5

(Body Diode)

, dlS/dt = 100A/µs)

D[Cont.]

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

D[Cont.]

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

5100 6120 1900 2660

800 1200 200 300

40 60 92 180 16 32 40 40 50 75 20 40

MIN TYP MAX

75

300

1.3

200

1.4

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5506 Rev C

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum T

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

0.4

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

4

j

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Starting T

5

The maximum current is limited by lead temperature.

-2

10

+25°C, L = 0.53mH, R

j

=

-1

10

MIN TYP MAX

0.34 40

25Ω, Peak IL = 75A

G

=

1.0 10

UNIT

°C/W

APT10M19SVR

200

160

VGS=9V, 10V & 15V

8V

200

160

VGS=15V

10V

9V

8V

120

7V

80

6.5V 80

6.5V

6V

40

, DRAIN CURRENT (AMPERES)

D

5.5V

5V

40

, DRAIN CURRENT (AMPERES)

D

4.5V

0

01020304050 012345 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

5.5V

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

125

100

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

75

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

50

25

, DRAIN CURRENT (AMPERES) I

D

0

02468 050100150200250300

V

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

TJ = -55°C

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

80

2.00

1.80

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.60

1.40

1.20

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.80

DS

VGS=10V

VGS=20V

1.15

7V

6V

5V

60

1.10

1.05

40

1.00

20

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.00

C

ID = 0.5 ID [Cont.]

VGS = 10V

1.75

1.50

1.25

1.00

(NORMALIZED)

0.75

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5506 Rev C

300

OPERATION HERE

LIMITED BY RDS (ON)

100

50

10

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

100µS

1mS

10mS

100mS DC

15,000 10,000

5,000

1,000

C

oss

C

iss

APT10M19SVR

C

iss

C

oss

C

rss

1

1 5 10 50 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = 0.5 ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 350 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=20V

VDS=50V

VDS=80V

500

200

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

T

=+150°C T

J

5

1

=+25°C

J

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

15.95 (.628)

16.05 (.632)

1.04 (.041)

1.15 (.045)

13.41 (.528)

13.51 (.532)

Drain

(Heat Sink)

13.79 (.543)

13.99 (.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

Revised

4/18/95

{3 Plcs}

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC {2 Plcs.}

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5506 Rev C

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Revised 8/29/97

11.51 (.453)

11.61 (.457)

3.81 (.150)

4.06 (.160) (Base of Lead)

Heat Sink (Drain) and Leads are Plated

ADVANCED POWER TECHNOLOGY APT10M19SVR Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual