ADVANCED POWER TECHNOLOGY APT10M11LVR Service Manual

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APT10M11LVR

100V 100A 0.011Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout..

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-264 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1 5

= 25°C

C

5

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1 5

Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

4

APT10M1LVR

TO-264

G

100
100
400

±30
±40

520

4.16

-55 to 150
300
100

50

2500

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2 5

(V

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

DS

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

x R

DS(on)

, VGS = 0V)

DSS

DSS

DS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C)
= 0V)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

100
100

24

0.011
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5545 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10M11LVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = 0.5 I

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

1 5

5

(Body Diode)

, dlS/dt = 100A/µs)

D[Cont.]

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

D[Cont.]

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

8600 10300
3200 4480
1180 1770

300 450

95 145

110 165

16 32
33 66
46 70

816

MIN TYP MAX

100
400

1.3

250

2.5

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5545 Rev B

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum T

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

4

j

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

Starting T

5

The maximum current is limited by lead temperature.

-2

10

+25°C, L = 500µH, R

j

=

-1

10

MIN TYP MAX

0.24
40

25Ω, Peak IL = 100A

G

=

1.0 10

UNIT

°C/W

APT10M11LVR

200

VGS=7V, 10V & 15V

200

VGS=10 & 15V

7V

160

120

80

40

, DRAIN CURRENT (AMPERES)

D

0

0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6V

5.5V

5V

4.5V

4V

160

120

80

40

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

200

160

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

120

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

1.10

1.05

1.00

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

0.95

80

0.90

40

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

120

TJ = +125°C
TJ = +25°C TJ = -55°C

02468 050100150200250300

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

0.85

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.80

DS

VGS=20V

1.15

6V

5.5V

5V

4.5V

4V

100

1.10

80

1.05

60

1.00

40

, DRAIN CURRENT (AMPERES) I

20

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.00

C

ID = 0.5 ID [Cont.]

VGS = 10V

1.75

1.50

1.25

1.00

(NORMALIZED)

0.75

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5545 Rev B

400

OPERATION HERE

LIMITED BY RDS (ON)

100

50

10

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

APT10M11LVR

C

oss

C

iss

C

iss

C

oss

C

rss

1

1 5 10 50 100 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

500

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = 0.5 ID [Cont.]

VDS=20V

VDS=50V

VDS=80V

400

100

T

=+150°C T

J

=+25°C

J

50

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-264 Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5545 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.29 (.090)

2.69 (.106)

Gate
Drain
Source